KR970052025A - PS Formation Method of Semiconductor Device - Google Patents
PS Formation Method of Semiconductor Device Download PDFInfo
- Publication number
- KR970052025A KR970052025A KR1019950069486A KR19950069486A KR970052025A KR 970052025 A KR970052025 A KR 970052025A KR 1019950069486 A KR1019950069486 A KR 1019950069486A KR 19950069486 A KR19950069486 A KR 19950069486A KR 970052025 A KR970052025 A KR 970052025A
- Authority
- KR
- South Korea
- Prior art keywords
- bpsg
- film
- semiconductor device
- bpsg film
- insulating film
- Prior art date
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- Formation Of Insulating Films (AREA)
Abstract
본 발명은 반도체 소자의 BPSG(borophosphorus silicate glass) 형성방법에 관한 것으로, 보다 구체적으로는 반도체 소자의 평탄화 절연막인 BPSG막의 결정 결함을 방지할 수 있는 반도체 소자의 BPSG 형성방법에 관한 것이다. 본 발명의 방법은 패턴이 구비된 반도체 기판 상부에 절연막을 형성하는 공정과; 상기 절연막 상부에 BPSG막을 증착하는 공정과; 상기 증착된 BPSG막을 약880 내지 920℃ 내외에서 플로우 하는 공정과; 상기 플로우된 BPSG막을 약500 내지 600℃ 범위에서 어닐링하는 공정과; 상기 BPSG막 상부의 BPSG 불순물의 확산층을 제거하는 공정을 포함하는 것을 특징으로 한다.The present invention relates to a method for forming a borophosphor silicate glass (BPSG) of a semiconductor device, and more particularly, to a method for forming a BPSG for a semiconductor device capable of preventing crystal defects of a BPSG film, which is a planarization insulating film of a semiconductor device. The method includes forming an insulating film on the semiconductor substrate provided with the pattern; Depositing a BPSG film on the insulating film; Flowing the deposited BPSG film at about 880 to 920 ° C .; Annealing the flowed BPSG film in a range of about 500 to 600 ° C .; And removing a diffusion layer of BPSG impurities on the BPSG film.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제2도는 본 발명에 따른 반도체 소자의 BPSG 형성방법을 설명하기 위한 도면.2 is a view for explaining a BPSG forming method of a semiconductor device according to the present invention.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950069486A KR970052025A (en) | 1995-12-30 | 1995-12-30 | PS Formation Method of Semiconductor Device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950069486A KR970052025A (en) | 1995-12-30 | 1995-12-30 | PS Formation Method of Semiconductor Device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970052025A true KR970052025A (en) | 1997-07-29 |
Family
ID=66639726
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950069486A KR970052025A (en) | 1995-12-30 | 1995-12-30 | PS Formation Method of Semiconductor Device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970052025A (en) |
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1995
- 1995-12-30 KR KR1019950069486A patent/KR970052025A/en not_active Application Discontinuation
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Legal Events
Date | Code | Title | Description |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |