KR970052025A - PS Formation Method of Semiconductor Device - Google Patents

PS Formation Method of Semiconductor Device Download PDF

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Publication number
KR970052025A
KR970052025A KR1019950069486A KR19950069486A KR970052025A KR 970052025 A KR970052025 A KR 970052025A KR 1019950069486 A KR1019950069486 A KR 1019950069486A KR 19950069486 A KR19950069486 A KR 19950069486A KR 970052025 A KR970052025 A KR 970052025A
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KR
South Korea
Prior art keywords
bpsg
film
semiconductor device
bpsg film
insulating film
Prior art date
Application number
KR1019950069486A
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Korean (ko)
Inventor
황정웅
안희균
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950069486A priority Critical patent/KR970052025A/en
Publication of KR970052025A publication Critical patent/KR970052025A/en

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  • Formation Of Insulating Films (AREA)

Abstract

본 발명은 반도체 소자의 BPSG(borophosphorus silicate glass) 형성방법에 관한 것으로, 보다 구체적으로는 반도체 소자의 평탄화 절연막인 BPSG막의 결정 결함을 방지할 수 있는 반도체 소자의 BPSG 형성방법에 관한 것이다. 본 발명의 방법은 패턴이 구비된 반도체 기판 상부에 절연막을 형성하는 공정과; 상기 절연막 상부에 BPSG막을 증착하는 공정과; 상기 증착된 BPSG막을 약880 내지 920℃ 내외에서 플로우 하는 공정과; 상기 플로우된 BPSG막을 약500 내지 600℃ 범위에서 어닐링하는 공정과; 상기 BPSG막 상부의 BPSG 불순물의 확산층을 제거하는 공정을 포함하는 것을 특징으로 한다.The present invention relates to a method for forming a borophosphor silicate glass (BPSG) of a semiconductor device, and more particularly, to a method for forming a BPSG for a semiconductor device capable of preventing crystal defects of a BPSG film, which is a planarization insulating film of a semiconductor device. The method includes forming an insulating film on the semiconductor substrate provided with the pattern; Depositing a BPSG film on the insulating film; Flowing the deposited BPSG film at about 880 to 920 ° C .; Annealing the flowed BPSG film in a range of about 500 to 600 ° C .; And removing a diffusion layer of BPSG impurities on the BPSG film.

Description

반도체 소자의 비피에스지 형성방법PS Formation Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명에 따른 반도체 소자의 BPSG 형성방법을 설명하기 위한 도면.2 is a view for explaining a BPSG forming method of a semiconductor device according to the present invention.

Claims (4)

패턴이 구비된 반도체 기판 상부에 절연막을 형성하는 공정과; 상기 절연막 상부에 BPSG막을 증착하는 공정과; 상기 증착된 BPSG막을 약880 내지 920℃ 내외에서 플로우 하는 공정과; 상기 플로우된 BPSG막을 약500 내지 600℃범위에서 어닐링하는 공정과; 상기 BPSG막 상부의 BPSG 불순물의 확산층을 제거하는 공정을 포함하는 것을 특징으로 하는 반도체 소자의 BPSG 형성방법.Forming an insulating film on the semiconductor substrate provided with the pattern; Depositing a BPSG film on the insulating film; Flowing the deposited BPSG film at about 880 to 920 ° C .; Annealing the flowed BPSG film in a range of about 500 to 600 ° C .; And removing the diffusion layer of the BPSG impurity on the BPSG film. 제1항에 있어서, 상기 BPSG막의 플로우 공정은 15 내지 25분 동안 실시하는 것을 특징으로 하는 반도체 소자의 BPSG 형성방법.The method of claim 1, wherein the flow of the BPSG film is performed for 15 to 25 minutes. 제1항에 있어서, 상기 BPSG막의 어닐링 공정은 50 내지 70분간 실시하는 것을 특징으로 하는 반도체 소자의 BPSG 형성방법.The method of claim 1, wherein the annealing of the BPSG film is performed for 50 to 70 minutes. 제1항에 있어서, 상기 BPSG 불순물의 확산층을 제거하는 공정은 H2SO4H2O2용액으로 선클리닝하고, NH4OH : H2O2: H2O용액으로 후클리닝하는 것을 특징으로 하는 반도체 소자의 BPSG 형성방법.The method of claim 1, wherein the step of removing the diffusion layer of BPSG impurities is pre-cleaned with H 2 SO 4 H 2 O 2 solution, and post-cleaned with NH 4 OH: H 2 O 2 : H 2 O solution. BPSG formation method of a semiconductor device. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950069486A 1995-12-30 1995-12-30 PS Formation Method of Semiconductor Device KR970052025A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950069486A KR970052025A (en) 1995-12-30 1995-12-30 PS Formation Method of Semiconductor Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950069486A KR970052025A (en) 1995-12-30 1995-12-30 PS Formation Method of Semiconductor Device

Publications (1)

Publication Number Publication Date
KR970052025A true KR970052025A (en) 1997-07-29

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950069486A KR970052025A (en) 1995-12-30 1995-12-30 PS Formation Method of Semiconductor Device

Country Status (1)

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KR (1) KR970052025A (en)

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