KR930008988A - BPSG film formation method - Google Patents

BPSG film formation method Download PDF

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Publication number
KR930008988A
KR930008988A KR1019910017942A KR910017942A KR930008988A KR 930008988 A KR930008988 A KR 930008988A KR 1019910017942 A KR1019910017942 A KR 1019910017942A KR 910017942 A KR910017942 A KR 910017942A KR 930008988 A KR930008988 A KR 930008988A
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KR
South Korea
Prior art keywords
bpsg film
gas
forming
chamber
film formation
Prior art date
Application number
KR1019910017942A
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Korean (ko)
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KR940007068B1 (en
Inventor
김은산
Original Assignee
문정환
금성 일렉트론 주식회사
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Priority to KR1019910017942A priority Critical patent/KR940007068B1/en
Publication of KR930008988A publication Critical patent/KR930008988A/en
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Publication of KR940007068B1 publication Critical patent/KR940007068B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

본 발명은 반도체 웨이퍼상에 BPSG막을 형성하는 방법으로서, BPSG막이 수분과 상호작용을 일으켜 BPSG막을 불안정하게 하거나 플로우 특성저하를 일으키는 문제점을 해결하기 위하여 반도체 웨이퍼를 BPSG 막 증착용 개스가 있는 반응챔버를 통과시키고, 연속적으로 N2/O2개스가 있는 열처리 및 리플로우 용 챔버를 통과시켜서, BPSG 막이 증착된 후 수분과의 상호작용 기회를 없애는 것이 특징인 BPSG막 형성방법이다.The present invention relates to a method of forming a BPSG film on a semiconductor wafer, in order to solve the problem that the BPSG film interacts with moisture to destabilize the BPSG film or to deteriorate flow characteristics, a reaction chamber having a gas for depositing a BPSG film is used. A method of forming a BPSG film, characterized by passing through and subsequently passing through a chamber for heat treatment and reflow with N 2 / O 2 gas, thereby eliminating the opportunity for interaction with moisture after the BPSG film is deposited.

Description

BPSG막 형성방법BPSG film formation method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (2)

반도체 웨이퍼상에 BPSG막을 형성하는 방법에 있어서, 반도체 웨이퍼를 BPSG 막 증착용 개스가 있는 반응 챔버를 통과시키고, 연속적으로 N2/O2개스가 있는 열처리 및 리플로우 용 챔버를 통과시켜, BPSG 막이 증착된 후 수분과의 상호작용 기회를 없애는 것이 특징인 BPSG 막 형성방법.In a method of forming a BPSG film on a semiconductor wafer, the semiconductor wafer is passed through a reaction chamber with a gas for BPSG film deposition, and subsequently passed through a chamber for heat treatment and reflow with N 2 / O 2 gas to form a BPSG film. A method of forming a BPSG film characterized by eliminating the opportunity for interaction with moisture after deposition. 제1항에 있어서, 상기 BPSG 막 증착용개스는 SiH4, O2, PH3, B2H|6이고, BPSG 막을 증착하는 반응챔버는 400℃ 정도로 유지시키고, 열처리용 챔버는 700~850℃로 유지시키는 것이 특징인 BPSG 막 형성방법.The method of claim 1, wherein the BPSG film deposition gas is SiH 4 , O 2 , PH 3 , B 2 H | 6 , wherein the reaction chamber for depositing the BPSG film is maintained at about 400 ° C., and the heat treatment chamber is maintained at 700 to 850 ° C. ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.※ Note: This is to be disclosed by the original application.
KR1019910017942A 1991-10-12 1991-10-12 Forming method of bpsg film KR940007068B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910017942A KR940007068B1 (en) 1991-10-12 1991-10-12 Forming method of bpsg film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910017942A KR940007068B1 (en) 1991-10-12 1991-10-12 Forming method of bpsg film

Publications (2)

Publication Number Publication Date
KR930008988A true KR930008988A (en) 1993-05-22
KR940007068B1 KR940007068B1 (en) 1994-08-04

Family

ID=19321142

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910017942A KR940007068B1 (en) 1991-10-12 1991-10-12 Forming method of bpsg film

Country Status (1)

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KR (1) KR940007068B1 (en)

Also Published As

Publication number Publication date
KR940007068B1 (en) 1994-08-04

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