KR970023843A - Film formation method using chemical vapor deposition method - Google Patents

Film formation method using chemical vapor deposition method Download PDF

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Publication number
KR970023843A
KR970023843A KR1019950035193A KR19950035193A KR970023843A KR 970023843 A KR970023843 A KR 970023843A KR 1019950035193 A KR1019950035193 A KR 1019950035193A KR 19950035193 A KR19950035193 A KR 19950035193A KR 970023843 A KR970023843 A KR 970023843A
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KR
South Korea
Prior art keywords
film
psg
vapor deposition
chemical vapor
cvd
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KR1019950035193A
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Korean (ko)
Inventor
이창훈
장영균
Original Assignee
김광호
삼성전자 주식회사
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950035193A priority Critical patent/KR970023843A/en
Publication of KR970023843A publication Critical patent/KR970023843A/en

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

본 발명은 화학 기상 증착(CVD) 방법으로 형성한 PSG(phosphorus silica glass) 막의 농도 변화를 계측하지 못하는 점을 개선하기 위해서 CVD 방법으로 형성한 PSG막이 농도 변화를 일으키지 않도록 하는 막을 형성하도록 하여 이 특성에 관한 특성 모니터를 불요로 하도록 한 것으로, 반도체 웨이퍼 상에 상기 CVD에 의한 상기 PSG막을 증착 형성하는 단계와, PSG막의 농도 변화를 억제하기 위해서 구조체에 대해서 어닐링을 행하는 단계를 포함하고 있다.In order to improve the failure of measuring the concentration change of the PSG (phosphorus silica glass) film formed by the chemical vapor deposition (CVD) method, the PSG film formed by the CVD method is formed so that the film does not cause the concentration change. In order to eliminate the need for a characteristic monitor relating to the present invention, the method includes depositing and forming the PSG film by the CVD on a semiconductor wafer, and performing annealing on the structure in order to suppress the concentration change of the PSG film.

Description

화학 기상 증착 방법을 사용한 막질 형성 방법Film formation method using chemical vapor deposition method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명의 방법이 적용된 제1도의 PSG막질에 대한 농도 경년 변화를 나타낸 그래프이다.Figure 2 is a graph showing the change in concentration over time for the PSG film of Figure 1 to which the method of the present invention is applied.

Claims (4)

화학 기상 증착(CVD) 방법으로 PSG(Phosphorus Silica Glass) 막을 형성함에 있어서, 상기 반도체 웨이퍼 상에 상기 CVD에 의한 상기 PSG막을 증착 형성하는 단계 ; 및 상기 PSG막의 농도 변화를 억제하기 위해서 상기 구조체에 대해서 어닐링을 행하는 단계를 포함하는 것을 특징으로 하는 화학 기상 증착 방법을 사용한 막질 형성 방법.Forming a PSG (Phosphorus Silica Glass) film by a chemical vapor deposition (CVD) method, comprising: depositing the PSG film by the CVD on the semiconductor wafer; And annealing the structure to suppress the concentration change of the PSG film. 제1항에 있어서, 상기 PSG막은 소정의 가스 흐름량의 PH3, SiH4및 O2반응 가스에 의해서 적정 온도하에서 형성된 것을 특징으로 하는 화학 기상 증착 방법을 사용한 막질 형성 방법.The method of claim 1, wherein the PSG film is formed at a suitable temperature by a PH 3 , SiH 4, and O 2 reactant gas having a predetermined gas flow amount. 제2항에 있어서, 상기 PH3가스 흐름량은 35cc 내지는 45cc인 것을 특징으로 하는 화학 기상 증착 방법을 사용한 막질 형성 방법.The method of claim 2, wherein the PH 3 gas flow rate is 35 cc to 45 cc. 제1항에 있어서, 상기 어닐링은 N2가스 분위기, 온도 400 내지 800℃ 및 10 내지 60분동안 수행되는 것을 특징으로 하는 화학 기상 증착 방법을 사용한 막질 형성 방법.The method of claim 1, wherein the annealing is performed for an N 2 gas atmosphere, a temperature of 400 to 800 ° C., and for 10 to 60 minutes. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950035193A 1995-10-12 1995-10-12 Film formation method using chemical vapor deposition method KR970023843A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950035193A KR970023843A (en) 1995-10-12 1995-10-12 Film formation method using chemical vapor deposition method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950035193A KR970023843A (en) 1995-10-12 1995-10-12 Film formation method using chemical vapor deposition method

Publications (1)

Publication Number Publication Date
KR970023843A true KR970023843A (en) 1997-05-30

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KR1019950035193A KR970023843A (en) 1995-10-12 1995-10-12 Film formation method using chemical vapor deposition method

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KR (1) KR970023843A (en)

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