KR930011117A - Blanket CVD Tungsten Formation Method - Google Patents

Blanket CVD Tungsten Formation Method Download PDF

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Publication number
KR930011117A
KR930011117A KR1019910020525A KR910020525A KR930011117A KR 930011117 A KR930011117 A KR 930011117A KR 1019910020525 A KR1019910020525 A KR 1019910020525A KR 910020525 A KR910020525 A KR 910020525A KR 930011117 A KR930011117 A KR 930011117A
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South Korea
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sih
blanket cvd
cvd tungsten
reduction
tin film
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KR1019910020525A
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Korean (ko)
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KR950005258B1 (en
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박선후
김영선
박영욱
이형규
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김광호
삼성전자 주식회사
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Publication of KR930011117A publication Critical patent/KR930011117A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

본 발명은 블랭킷 CVD텅스텐 형성방법에 관한 것으로, Ti/TiN막을 밀착층으로 사용하고 WF6와 SiH4의 환원반응 및 WF6와 H2의 환원반응의 2단계공정에 의해 블랭킷 CVD텅스텐을 증착하여 반도체장치의 콘택홀을 메몰하는 방법에 있어서, 상기 제1단계공정인 SiH4환원반응시의 증착시간을 길게하거나 증착온도를 고온으로 하는 것을 특징으로 하는 본 발명에 의하면, 밀착층인 TiN의 어닐링 유무와 관계없이 안정된 텅스텐의 증착이 가능하므로 디바이스의 전기적 특성의 안정화를 도모할수 있으며, 증착온도와 시간을 변화시키면 종래와 동일한 공정으로도 텅스텐의 리프팅을 방지할수 있으므로 TiN막의 변화에 따른 공정의 변화가 불필요하게 되어 공정의 단순화가 가능하게 된다.The present invention relates to a method for forming a blanket CVD tungsten, by using a Ti / TiN film as an adhesion layer and depositing the blanket CVD tungsten by a two-step process of reduction of WF 6 and SiH 4 and reduction of WF 6 and H 2 . In the method of embedding the contact hole of the semiconductor device, according to the present invention, the deposition time during SiH 4 reduction reaction as the first step is increased or the deposition temperature is set to a high temperature. Since stable tungsten can be deposited with or without it, it is possible to stabilize the electrical characteristics of the device, and if the deposition temperature and time are changed, tungsten lifting can be prevented by the same process as before, so the change of the process according to the change of TiN film Is unnecessary, which simplifies the process.

Description

블랭킷 CVD텅스텐 형성방법Blanket CVD Tungsten Formation Method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명에 의한 블랭킷 CVD텅스텐 형성방법에 있어서의 공정조건을 나타낸 도표.3 is a table showing the process conditions in the blanket CVD tungsten forming method according to the present invention.

제4a도 및 제4b도는 각각 종래방법에 의해 형성된 텅스텐막과 본 발명에 의해 형성된 텅스텐막의 단면을 나타낸 SEM사진.4A and 4B are SEM photographs showing cross sections of the tungsten film formed by the conventional method and the tungsten film formed by the present invention, respectively.

제5도는 본 발명에 의한 블랭킷 CVD텅스텐 형성방법에 있어서의 다른 공정조건을 나타낸 도표.5 is a table showing other process conditions in the blanket CVD tungsten forming method according to the present invention.

제6도는 텅스텐 증착온도에 따른 인큐베이션 시간의 변화를 나타낸 그래프.6 is a graph showing the change of incubation time according to the tungsten deposition temperature.

Claims (8)

Ti/TiN막을 밀착층으로 사용하고 WF6와 SiH4의 환원반응 및 WF6와 H2의 환원반응의 2단계 공정에 의한 블랭킷 CVD텅스텐을 증착하여 반도체장치의 콘택홀을 매몰하는 방법에 있어서, 상기 1단계공정인 SiH4환원반응시의 증착시간을 길게 하는 것을 특징으로 하는 블랭킷 CVD텅스텐 형성방법.In the method of depositing a blanket CVD tungsten by a two-step process of using a Ti / TiN film as an adhesion layer and reducing the reaction of WF 6 and SiH 4 and reducing the reaction of WF 6 and H 2 , Blanket CVD tungsten forming method, characterized in that the evaporation time during the SiH 4 reduction reaction of the first step. 제1항에 있어서, 상기 SiH4환원반응시의 증착시간은 150초∼200초인 것을 특징으로 하는 블랭킷 CVD텅스텐 형성방법.The method of claim 1, wherein the deposition time during the SiH 4 reduction reaction is 150 seconds to 200 seconds, characterized in that the blanket CVD tungsten forming method. 제1항에 있어서, 상기 SiH4환원반응시의 증착온도는 400℃인 것을 특징으로 하는 블랭킷 CVD텅스텐 형성방법.The method of claim 1, wherein the deposition temperature during the SiH 4 reduction reaction is 400 ℃. 제1항에 있어서, 상기 Ti/TiN막의 두께는 300A∼900A/900A∼2,000인 것을 특징으로 하는 블랭킷 CVD텅스텐 형성방법.The method of claim 1, wherein the thickness of the Ti / TiN film is 300A to 900A / 900A to 2,000. Ti/TiN막을 밀착층으로 사용하고 WF6와 SiH4의 환원반응 및 WF6와 SiH4의 환원반응의 2단계공정에 의해 블랭킷 CVD텅스텐을 증착하여 반도체장치의 콘택홀을 매몰하는 방법에 있어서, 상기 SiH4환원반응시의 증착온도를 고온으로 하는 것을 특징으로 하는 블랭킷 CVD텅스텐 형성방법.Using the adhesive layer Ti / TiN film and a method for burying the contact holes of a semiconductor device by depositing a blanket CVD tungsten by a two step process of reduction of WF 6 and SiH 4 reduction and WF 6 and SiH 4, the A blanket CVD tungsten forming method, wherein the deposition temperature during the SiH 4 reduction reaction is set to a high temperature. 제5항에 있어서, 상기 SiH4환원반응시 증착온도는 440℃∼460℃인 것을 특징으로 하는 블랭킷 CVD텅스텐 형성방법.The method of claim 5, wherein the deposition temperature during the SiH 4 reduction reaction is a blanket CVD tungsten forming method, characterized in that 440 ℃ to 460 ℃. 제5항에 있어서, 상기 SiH4환원반응시 증착온도시간은 70초∼100초인 것을 특징으로 하는 블랭킷 CVD텅스텐 형성방법.6. The method of claim 5, wherein the deposition temperature time during the SiH 4 reduction reaction is 70 seconds to 100 seconds. 제5항에 있어서, 상기 Ti/TiN막의 두께는 300A∼900A/900A∼2,000인 것을 특징으로 하는 블랭킷 CVD텅스텐 형성방법.The method of claim 5, wherein the thickness of the Ti / TiN film is 300A to 900A / 900A to 2,000. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910020525A 1991-11-18 1991-11-18 Depositing method of blanket cvd tungsten KR950005258B1 (en)

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KR930011117A true KR930011117A (en) 1993-06-23
KR950005258B1 KR950005258B1 (en) 1995-05-22

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100468694B1 (en) * 1997-10-13 2005-03-16 삼성전자주식회사 Method for forming contact for semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100468694B1 (en) * 1997-10-13 2005-03-16 삼성전자주식회사 Method for forming contact for semiconductor device

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