KR950005258B1 - Depositing method of blanket cvd tungsten - Google Patents
Depositing method of blanket cvd tungsten Download PDFInfo
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- KR950005258B1 KR950005258B1 KR1019910020525A KR910020525A KR950005258B1 KR 950005258 B1 KR950005258 B1 KR 950005258B1 KR 1019910020525 A KR1019910020525 A KR 1019910020525A KR 910020525 A KR910020525 A KR 910020525A KR 950005258 B1 KR950005258 B1 KR 950005258B1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 59
- 239000010937 tungsten Substances 0.000 title claims abstract description 59
- 238000000151 deposition Methods 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims description 48
- 238000006722 reduction reaction Methods 0.000 claims abstract description 23
- 230000008021 deposition Effects 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 230000008569 process Effects 0.000 claims description 32
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 24
- 238000006243 chemical reaction Methods 0.000 claims description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 2
- 238000001465 metallisation Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 43
- 239000010410 layer Substances 0.000 description 9
- 238000000137 annealing Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 229910010303 TiOxNy Inorganic materials 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 238000011534 incubation Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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Abstract
Description
제1도는 본 발명 및 종래의 블랭킷CVD텅스텐을 이용한 콘택홀 매몰방법을 설명하기 위하여 도시한 공정 흐름도 .1 is a process flow diagram illustrating the present invention and conventional contact hole embedding method using blanket CVD tungsten.
제2도는 종래의 블랭킷CVD텅스텐 형성방법에 있어서의 공정조건들 나타낸 도표.2 is a table showing process conditions in a conventional blanket CVD tungsten forming method.
제3도는 본 발명에 의한 블랭킷CVD텅스텐 형성방법에 있어서의 공정조건을 나타낸 도표.3 is a table showing the process conditions in the blanket CVD tungsten forming method according to the present invention.
제4a도 및 제4b도는 각각 본 발명에 의해 형성된 텅스텐막과 종래 방법에 의해 형성된 텅스텐막의 단면을 나타낸 SEM사진4A and 4B are SEM photographs showing cross sections of the tungsten film formed by the present invention and the tungsten film formed by the conventional method, respectively.
제5도는 본 발명에 의한 블랭킷CVD텅스텐 형성방법에 있어서의 다른 공정조건을 나타낸 도표.5 is a table showing other process conditions in the blanket CVD tungsten forming method according to the present invention.
제6도는 텅스텐증착온도에 따른 인큐베이션시간의 변화를 나타낸 그래프.Figure 6 is a graph showing the change in incubation time according to the tungsten deposition temperature.
본 발명은 반도체장치의 금속배선 형성방법에 관한 것으로, 특히 블랭킷CVD텅스텐 증착방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming metal wiring in a semiconductor device, and more particularly, to a blanket CVD tungsten deposition method.
반도체소자의 집적도증가는 큰 종횡비(Aspect ratio)를 갖는 콘택홀에 우수한 스텝커버리지(Step coverage)를 갖는 금속의 플러그(Plug)를 요구하게 되었다. 이에 따라 기존의 Al스퍼터링(Sputtering)에 의한 콘택홀 매몰은 종횡비의 증가에 의해 보이드(Void)등의 결함이 발생하거나 스텝커버리지가 불량하게 되어 배선의 단락이나 힐록(Hill lock)을 유발시켜 신뢰성을 저하시키게 되었다. 따라서 최근에는 제조공정을 CVD로 전환하려는 연구가 진행되고 있으며, 이들 연구중 가장 우수한 스텝커버리지를 제공할 수 있는 공정으로 화학증착(Chemical Vapor Deposition : 이하 CVD라 칭함)에 의한 텅스텐 제조공정이 부각되어왔다.Increasing the integration density of semiconductor devices requires a metal plug having excellent step coverage in a contact hole having a large aspect ratio. As a result, the contact hole buried by the existing Al sputtering may cause defects such as voids or poor step coverage due to an increase in the aspect ratio, leading to short circuits or hill locks in the wiring, thereby improving reliability. Was degraded. Recently, research into converting the manufacturing process to CVD has been conducted, and the tungsten manufacturing process by chemical vapor deposition (Chemical Vapor Deposition) has been highlighted as a process that can provide the best step coverage among these studies. come.
CVD 텅스텐박막은 낮은 저항값을 갖고 있으며, Al배선에 대한 스텝커버리지를 개선시켜서 일레트로마이그레이션(Electromigration)이나 스트레스마이그레이션(Stressmigration)에 대한 저항성을 향상시키는 장점을 가지고 있다. 그러나 CVD텅스텐은 SiO2와 같은 절연막상에 증착시키는 경우에 불량한 부착력(Adhesion)을 가지고 있어서 텅스텐의 필오프(Peel off)가 발생하는 문제점이 있다. 따라서 일반적으로 텅스텐박막을 화학증착시키기 전에 부착력 향상을 위해서 밀착층(Glue layer)을 형성하고 있다.The CVD tungsten thin film has a low resistance value, and has an advantage of improving resistance to electromigration or stress migration by improving step coverage for Al wiring. However, CVD tungsten has a poor adhesion force when deposited on an insulating film such as SiO 2 , causing a problem of peeling off tungsten. Therefore, in general, before the chemical vapor deposition of the tungsten thin film to form an adhesion layer (Glue layer) to improve the adhesion.
콘택플러그(Contact plug)를 형성함에 있어서 밀착층으로서 Ti/TiN막을 사용한 종래의 블랭킷CVD 텅스텐 형성방법을 제1도에 플로우차트로 나타내었는 바 이를 설명하면 다음과 같다.A conventional blanket CVD tungsten forming method using a Ti / TiN film as an adhesive layer in forming a contact plug is shown in FIG. 1 as a flowchart.
반도체기판에 불순물확산영역, 즉 소오스/드레인영역을 형성하기 위해 이온주입을 행한 다음(a), 상기 반도체기판상에 절연막, 예컨대 산화막을 형성하고(b) 난 후. 이 산화막에 콘택홀을 형성한다(c) . 이어서 밀착층인 Ti/TiN막을 300Å∼900Å/900Å∼2,000Å의 두께로 상기 산화막상 및 콘택홀 내부에 증착한 다음 450℃에서 N2분위기로 30분간 어닐링(Annealing)을 행한다(d). 그리고 난 후 블랭킷CVD텅스텐을 2단계공정에 의해 증착하는 바, 그 공정조건을 제2도에 도시한 바와 같다. 즉, 1단계공정으로서 400℃의 온도에서 H2유량 3,000SCCM, SiH4유량 100SCCM, WF6유량 300SCCM을 압력 0.3Torr의 리액터내에서 50초간 반응시켜 SiH4환원반응에 의한 블랭킷CVD텅스텐을 형성한 다음, 이어서 2단계공정으로 400℃의 온도에서 H2유량 6,800SCCM, WF6유량 400SCCM을 압력 30Torr의 리액터내에서 300초간 반응시켜 H2환원반응에 의한 블랭킷CVD텅스텐을 형성함으로써 콘택홀을 완전히 매몰시킨다(e). 이상과 같이 1단계공정으로 SiH4환원반응에 의한 텅스텐막을 먼저 얇게 증착함으로써 H2환원반응시의 WF6에 의한 밀착층인 Ti/TiN막의 침식을 방지하고. 2단계공정으로서 H2환원반응에 의한 텅스텐막의 우수한 스텝커버리지 특성을 이용하여 H2환원반응으로 텅스텐을 증착하게 되면 보이드등의 결함없이 콘택홀을 매몰시킬 수 있다. 이어서 콘택홀 이외의 부분에 증착된 텅스텐막을 에치백공정에 의해 제거하게 되면(f) 콘택플러그의 형성이 완성된다.After ion implantation to form an impurity diffusion region, that is, a source / drain region, in the semiconductor substrate (a), and then an insulating film, such as an oxide film, is formed on the semiconductor substrate (b). Contact holes are formed in the oxide film (c). Subsequently, a Ti / TiN film, which is an adhesive layer, is deposited in the oxide film and the contact hole at a thickness of 300 kPa to 900 kPa / 900 kPa to 2,000 kPa, and then annealed for 30 minutes in an N 2 atmosphere at 450 ° C (d). Then, blanket CVD tungsten is deposited by a two-step process, and the process conditions are as shown in FIG. That is, a blanket CVD tungsten by SiH 4 reduction reaction was formed by reacting the H 2 flow rate 3,000 SCCM, the SiH 4 flow rate 100SCCM, and the WF 6 flow rate 300SCCM for 50 seconds in a reactor at a pressure of 0.3 Torr at a temperature of 400 ° C. as a first step process. next, a contact hole was then completely embedded the H 2 flow rate 6,800SCCM, WF 6 flow rate 400SCCM at a temperature of 400 ℃ a two step process was 300 seconds the reaction in the reactor pressure 30Torr by forming a blanket tungsten CVD by H 2 reduction reaction (E). As described above, by first thinly depositing the tungsten film by the SiH 4 reduction reaction in one step, the erosion of the Ti / TiN film, which is an adhesion layer by WF 6 during the H 2 reduction reaction, is prevented. When the tungsten is deposited by the H 2 reduction reaction using the excellent step coverage characteristics of the tungsten film by the H 2 reduction reaction as a two-step process, the contact hole can be buried without defects such as voids. Subsequently, when the tungsten film deposited in portions other than the contact hole is removed by the etch back process (f), the formation of the contact plug is completed.
그러나 상기의 종래방법에 있어서, 밀착층인 Ti/TiN막 증착후 어닐링을 행하게 되면 어닐링중에 반응로의 산소분위기에 의해 Ti/TiN막 표면이 산화되어 TiOxNy막으로 변화된다. 이와 같이 TiN표면에 존재하는 TiOxNy막은 TiN결합에 비해 전기음성도가 커서 전자의 이탈을 억제하기 때문에 텅스텐증착시에 반응기체인 WF6의 흡착사이트(Site)를 제공하기 어렵게 된다. 따라서 표면의 TiOxNy가 F-를 치환시킬 전자의 공급을 차단시켜 WF6의 흡착을 방해하는 역할을 하는 한편. WF6에 의해 TiOxNy의 Ox. 즉 산화층의 에칭반응이 일어나 텅스텐증착의 인큐베이션(Incubation)시간이 증가되게 된다. 이에 따라 짧은 시간동안 행해지는 1단계공정인 SiH4환원반응에 의한 텅스텐막은 증착되지 못하고 2단계공정인 H2환원반응에 의해 텅스텐막이 증착되어 TiN막을 침식함에 따라 텅스텐막이 기판상에 잘 부착되지 않는 리프팅 (lifting)이 발생하는 문제점이 있다.However, in the above conventional method, when annealing is performed after deposition of the Ti / TiN film as an adhesion layer, the surface of the Ti / TiN film is oxidized by the oxygen atmosphere of the reactor during the annealing to change into a TiOxNy film. As described above, the TiOxNy film present on the TiN surface has a higher electronegativity than TiN bonds, thereby suppressing the electrons from leaving, making it difficult to provide an adsorption site (Wite) of WF 6 which is a reactive gas during tungsten deposition. Thus, TiOxNy on the surface blocks the supply of electrons to displace F- and interferes with the adsorption of WF 6 . Ox. Of TiOxNy by WF 6 . In other words, the etching reaction of the oxide layer occurs to increase the incubation time of tungsten deposition. As a result, the tungsten film is not deposited by the SiH 4 reduction reaction, which is performed for a short time, and the tungsten film is not deposited on the substrate as the tungsten film is deposited by the H 2 reduction reaction. There is a problem that lifting occurs.
따라서 본 발명은 상술한 문제점을 해결하기 위해 발명된 것으로, 안정된 블랭킷CVD텅스텐 공정을 제공하는데 그 목적이 있다.Therefore, the present invention has been invented to solve the above problems, and an object thereof is to provide a stable blanket CVD tungsten process.
상기 목적을 달성하기 위해 본 발명은 Ti/TiN막을 밀착층으로 사용하고 WF6와 SiH4의 환원반응 및 WF6와 H2의 환원반응의 2단계공정에 의해 블랭킷CVD텅스텐을 증착하여 반도체장치의 콘택홀을 매몰하는 방법에 있어서, 상기 1단계공정인 SiH4환원반응시의 증착온도와 증착시간은 각각 400℃ 및 150초∼200초로 수행 한다.In order to achieve the above object, the present invention uses a Ti / TiN film as an adhesion layer and deposits blanket CVD tungsten by a two-step process of reducing the reaction of WF 6 and SiH 4 and reducing the reaction of WF 6 and H 2 . In the method of embedding the contact hole, the deposition temperature and the deposition time during the SiH 4 reduction reaction as the first step are performed at 400 ° C. and 150 seconds to 200 seconds, respectively.
상기 Ti/TiN막의 두께는 300Å∼900Å/900Å∼2,000Å로 형성할 수 있다.The thickness of the Ti / TiN film can be formed from 300 kPa to 900 kPa / 900 kPa to 2,000 kPa.
본 발명의 다른 예에 의하면, 본 발명은 Ti/TiN막을 밀착층으로 사용하고 WF6와 SiH4의 환원반응 및 WF6와 H2의 환원반응의 2단계공정에 의해 블랭킷CVD텅스텐을 증착하여 반도체장치의 콘택홀을 매몰하는 방법에 있어서, 상기 SiH4환원반응시의 증착온도와 증착시간은 각각 400℃∼460℃ 및 70초∼100초로 수행한다.According to another example of the present invention, the present invention uses a Ti / TiN film as an adhesion layer, and deposits a blanket CVD tungsten by a two-step process of reduction of WF 6 and SiH 4 and reduction of WF 6 and H 2 . In the method of embedding the contact hole of the device, the deposition temperature and the deposition time during the SiH 4 reduction reaction are performed at 400 ° C. to 460 ° C. and 70 seconds to 100 seconds, respectively.
상기 Ti/TiN막의 두께는 300Å ∼900Å/900Å,∼2,000Å로 형성할 수 있다.The Ti / TiN film may have a thickness of 300 kPa to 900 kPa / 900 kPa and 2,000 kPa.
본 발명에 의하면, 밀착층인 TiN의 어닐링 유무와 관계없이 안정된 텅스텐의 증착이 가능하므로 디바이스의 전기적 특성의 안정화를 도모할 수 있다. 또한, 증착온도와 시간을 변화시키면 종래와 동일한 공정으로도 텅스텐의 리프팅을 방지할 수 있으므로 TiN막의 변화에 따른 공정의 변화가 불필요하게 되어 공정의 단순화가 가능하게 된다.According to the present invention, since stable tungsten can be deposited with or without annealing of TiN, which is an adhesion layer, the electrical characteristics of the device can be stabilized. In addition, by changing the deposition temperature and time it is possible to prevent the lifting of tungsten in the same process as in the prior art, so that the change of the process due to the change of the TiN film is unnecessary, thereby simplifying the process.
이하, 도면을 참조하여 본 발명을 상세히 설명한다.Hereinafter, the present invention will be described in detail with reference to the drawings.
실시예 1Example 1
본 발명에 의한 블랭킷CVD텅스텐의 형성방법의 제1실시예를 제1도 및 제3도를 참조하여 설명한다.A first embodiment of the method for forming the blanket CVD tungsten according to the present invention will be described with reference to FIGS. 1 and 3.
구체적으로, 반도체기판에 불순물확산영역, 즉 소오스/드레인영역을 형성하기 위해 이온주입을 행한 다음(a), 상기 반도체기판상에 절연막, 예컨대 산화막을 형성하고(b) 난 후, 이 산화막에 콘택홀을 형성한다.Specifically, ion implantation is performed to form an impurity diffusion region, that is, a source / drain region, in the semiconductor substrate (a), an insulating film, such as an oxide film is formed on the semiconductor substrate (b), and then contacted to the oxide film. Form a hole.
(c), 이어서 밀착층인 Ti/TiN막을 300Å∼900Å/900Å-2,000Å의 두께로 상기 산화막상 및 콘택홀 내부에 증착한 다음 450℃에서 N2분위기로 30분간 어닐링(Annealing)을 행한다(d). 그리고 난후 블랭킷CVD텅스텐을 2단계공정에 의해 증착하는 바, 그 공정조건을 제3도에 도시하였다. 보다 상세하게는, 1단계공정으로서 400℃의 온도에서 H2유량 3,000SCCM, SiH4유량 100SCCM, WF6유량 300SCCM을 압력 0.3Torr의 리액터내에서 SiH4환원반응에 의한 블랭킷CVD텅스텐을 형성한다. 이때 본 발명의 경우에는 SiH4환원반응에 의한 블랭킷CVD텅스텐의 형성시간을 종래의 40∼60초보다 길게 150∼200초로 하였다.(c) Subsequently, a Ti / TiN film, which is an adhesive layer, is deposited on the oxide film and the contact hole in a thickness of 300 kPa to 900 kPa / 900 kPa to 2,000 kPa, and then annealed for 30 minutes in an N 2 atmosphere at 450 캜 ( d). Then, blanket CVD tungsten was deposited by a two-step process. The process conditions are shown in FIG. More specifically, a blanket CVD tungsten is formed by a SiH 4 reduction reaction in a reactor at a pressure of 0.3 Torr in a H 2 flow rate of 3,000 SCCM, a SiH 4 flow rate of 100 SCCM, and a WF 6 flow rate of 300 SCCM at a temperature of 400 ° C. as a one-step process. In this case, in the present invention, the formation time of the blanket CVD tungsten by SiH 4 reduction was set to 150 to 200 seconds longer than the conventional 40 to 60 seconds.
다음에, 2단계공정으로 400℃의 온도에서 H2유량 6,800SCCM, WF6유량 400SCCM을 압력 30Torr의 리액터내에서 300초간 반응시켜 H2환원반응에 의한 블랭킷CVD텅스텐을 형성함으로써 콘택홀을 완전히 매몰시킨다(e) 이어서 콘택홀 이외의 부분에 증착된 텅스텐막을 에치백공정에 의해 제거하게 되면(f) 콘택플러그의 형성이 완성된다.Next, a two-step process in H 2 flow rate 6,800SCCM, WF 6 flow rate was 300 seconds the reaction within the reactor pressure 30Torr a 400SCCM by forming a blanket tungsten CVD by H 2 reduction completely buried a contact hole at a temperature of 400 ℃ (E) Then, the tungsten film deposited in the portions other than the contact holes is removed by the etch back process (f) to form the contact plugs.
이와 같이 본 발명에 따라 SiH4환원만응시의 증착시간을 증가시켜 형성한 블랭킷CVD텅스텐막과 종래방법에 따라 형성한 블랭킷CVD텅스텐막을 각각 제4A도와 제4B도에 SEM사진으로 나타내었다. 사진에서 알 수 있는 바와 같이 종래방법에 의해 형성된 블랭깃CVD텅스텐의 경우에는 리프팅이 발생하였으나(제4B도), SiH4환원반응시의 증착시간을 증가시킨 존 발명 (제4A)의 경우에는 리프팅발생이 없는 안정된 접착상태를 나타낸다.As described above, the blanket CVD tungsten film formed by increasing the deposition time of SiH 4 reduction-only staring according to the present invention and the blanket CVD tungsten film formed according to the conventional method are shown as SEM photographs in FIGS. 4A and 4B, respectively. As can be seen in the photo, lifting occurred in the blank CVD tungsten formed by the conventional method (FIG. 4B), but in the case of the zone invention (4A) which increased the deposition time during the SiH 4 reduction reaction. It shows a stable adhesion state without occurrence.
실시예 2Example 2
본 발명의 제2실시예는 상기 제1실시예에서 블랭킷CVD텅스텐의 형성방법을 제외하고는 동일하다.The second embodiment of the present invention is the same except for the method of forming the blanket CVD tungsten in the first embodiment.
제5도는 본 발명의 제2실시예를 설명하기 위하여 공정조건을 나타낸 도표이다.5 is a table showing process conditions for explaining the second embodiment of the present invention.
먼저, 상기 제1실시예에서 설명한 바와 같이 반도체기판에 불순물확산영역을 형성하는 단계에서 밀착층인 Ti/TiN막을 300Å∼900Å/900Å∼2,000Å의 두께로 증착한후 450℃에서 N2분위기로 30분간 어닐링(Annealing)을 실시하는 단계는 동일하게 실시한다(d).First, as described in the first embodiment, in the step of forming the impurity diffusion region on the semiconductor substrate, the Ti / TiN film, which is an adhesive layer, is deposited at a thickness of 300 kPa to 900 kPa / 900 kPa to 2,000 kPa, and then the N 2 atmosphere at 450 ° C. Annealing for 30 minutes is performed in the same manner (d).
다음에, 블랭킷CVD텅스텐을 2단계공정에 의해 증착한다. 이때 증착조건은 제5도에 도시한 바와 같다. 구체적으로, 1단계공정인 SiH4환원반응은 440℃∼460℃의 고온도에서 70초∼100초간, 2단계공정인 H2환원반응은 H2유량을 3,000SCCM으로 하여 440℃∼460℃의 온도에서 150초간 진행하여 텅스텐막을 증착시킴으로써 콘택홀을 완전히 매몰시킨다. 이어서 콘택홀 이외의 부분에 중착된 텅스텐막을 에치백공정에 의해 제거하게 되면 콘택플러그의 형성이 완성된다.Next, a blanket CVD tungsten is deposited by a two step process. At this time, the deposition conditions are as shown in FIG. Specifically, the SiH 4 reduction reaction, which is a one-step process, is performed for 70 seconds to 100 seconds at a high temperature of 440 ° C. to 460 ° C., and the H 2 reduction reaction, which is a two-step process, uses a H 2 flow rate of 3,000 SCCM at 440 ° C. to 460 ° C. The contact hole is completely buried by depositing a tungsten film by proceeding for 150 seconds at the temperature. Subsequently, when the tungsten film deposited on the portions other than the contact holes is removed by the etch back process, contact plug formation is completed.
상술한 바와 같이 블랭킷CVD텅스텐막의 1단계공정을 440℃∼460℃의 높은 온도에서 70초∼100초간 형성시킬 경우에도 상기 제1실시예에서와 같이 안정된 접착특성을 얻을 수 있는데, 이는 초기 텅스텐증착시 TiN의 어닐링 유무에 따른 인큐베이션 시간변화를 조사하기 위해서 증착온도의 변화에 따라 초기 텅스텐증착을 수행한 후 그 결과를 나타낸 그래프인 제6도에 의해 설명할 수 있다.As described above, even when the one-step process of the blanket CVD tungsten film is formed at a high temperature of 440 ° C. to 460 ° C. for 70 seconds to 100 seconds, stable adhesive properties can be obtained as in the first embodiment. In order to investigate the incubation time with or without annealing TiN during the initial tungsten deposition according to the change of the deposition temperature can be described by Figure 6 which is a graph showing the results.
구체적으로, 제6도의 그래프에 도시된 바와 같이 어떤 온도, 즉, 440℃ 이상에서는 어닐링된 TiN막상에 텅스텐막을 증착시킬 경우와 어닐링되지 않은 TiN막상에 텅스텐을 증착시킬 경우의 인큐베이션시간이 동일해지므로 440℃ 이상의 온도에서 텅스텐을 증착하게 되면 TiN의 어닐링에 의해 TiOxNy막이 형정되더라도 리프팅의 발생이 없고 접착상태가 양호한 텅스텐막을 증착할 수 있게 된다.Specifically, as shown in the graph of FIG. 6, at a certain temperature, that is, at 440 ° C. or higher, the incubation time when the tungsten film is deposited on the annealed TiN film and when the tungsten is deposited on the unannealed TiN film becomes the same. When tungsten is deposited at a temperature of 440 ° C. or higher, even if the TiOxNy film is formed by annealing of TiN, it is possible to deposit a tungsten film having no adhesion and having good adhesion.
상술한 바와 같이 본 발명에 의하면, 밀착층인 TiN의 어닐링 유무와 관계없이 안정된 증착이 가능하므로 디바이스의 전기적 특성의 안정화를 도모할 수 있으며, 증착온도와 시간을 변화시키면 종래와 동일한 공정으로도 텅스텐의 리프팅을 방지할 수 있으므로 TiN막의 변화에 따른 공정의 변화가 불필요하게 되어 공정의 단순화가 가능하게 된다.As described above, according to the present invention, stable deposition is possible regardless of the annealing of TiN, which is an adhesion layer, and thus, the electrical characteristics of the device can be stabilized. Lifting can be prevented, so that the change of the process due to the change of the TiN film becomes unnecessary, and the process can be simplified.
이상 본 발명을 구체적인 예를 들어 설명하였으나, 본 발명은 상기 예에 국한되지 아니하고, 당업자가 가진 통상적인 지식의 범위내에서 그 변형이나 개량이 가능하다.As mentioned above, although this invention was demonstrated to a specific example, this invention is not limited to the said example, The deformation | transformation and improvement are possible within the range of the common knowledge which a person skilled in the art has.
Claims (4)
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