KR980005615A - METHOD FOR FORMING METAL WIRING OF SEMICONDUCTOR - Google Patents
METHOD FOR FORMING METAL WIRING OF SEMICONDUCTOR Download PDFInfo
- Publication number
- KR980005615A KR980005615A KR1019960025767A KR19960025767A KR980005615A KR 980005615 A KR980005615 A KR 980005615A KR 1019960025767 A KR1019960025767 A KR 1019960025767A KR 19960025767 A KR19960025767 A KR 19960025767A KR 980005615 A KR980005615 A KR 980005615A
- Authority
- KR
- South Korea
- Prior art keywords
- metal wiring
- cvd
- tin
- depositing
- wiring layer
- Prior art date
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
본 발명은 반도체 소자의 금속 배선 형성 배선 형성방법에 관한 것으로, 금속 배선의 베리어층으로 사용하는 TiN을 화확 기상증착방법으로 증착한 다음, 질소(N2), 질소와 수소의 혼합 가스(N2+H2), 또는 암모니아(NH3)중의 하나인 분위기에서 급속 열처리를 실시하여 CVD-TiN 내의 탄소의 양을 줄이고 조밀한 TiN박막을 형성하고, 그 상부에 금속 배선층을 증착하여 금속 배선을 형성하는 것이다.The present invention relates to a method of forming a wiring forming metal wiring of a semiconductor device, a deposition of TiN using the barrier layer of the metal wiring in Rubber Products vapor deposition method, and then, nitrogen (N 2), nitrogen and a mixture of hydrogen gas (N 2 + H 2 ), or ammonia (NH 3 ) to reduce the amount of carbon in the CVD-TiN to form a dense TiN film, and a metal wiring layer is deposited thereon to form a metal wiring .
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
제5도는 본 발명의 실시예에 의해 실리콘 기판에 콘택되는 금속 배선을 형성하는 단계를 도시한 단면도이다.FIG. 5 is a cross-sectional view showing the step of forming a metal wiring to be contacted with a silicon substrate according to an embodiment of the present invention.
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960025767A KR980005615A (en) | 1996-06-29 | 1996-06-29 | METHOD FOR FORMING METAL WIRING OF SEMICONDUCTOR |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960025767A KR980005615A (en) | 1996-06-29 | 1996-06-29 | METHOD FOR FORMING METAL WIRING OF SEMICONDUCTOR |
Publications (1)
Publication Number | Publication Date |
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KR980005615A true KR980005615A (en) | 1998-03-30 |
Family
ID=66241384
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960025767A KR980005615A (en) | 1996-06-29 | 1996-06-29 | METHOD FOR FORMING METAL WIRING OF SEMICONDUCTOR |
Country Status (1)
Country | Link |
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KR (1) | KR980005615A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100472259B1 (en) * | 2001-03-28 | 2005-03-08 | 샤프 가부시키가이샤 | METHOD OF BARRIER METAL SURFACE TREATMENT PRIOR TO Cu DEPOSITION TO IMPROVE ADHESION AND TRENCH FILLING CHARACTERISTICS |
KR100480576B1 (en) * | 1997-12-15 | 2005-05-16 | 삼성전자주식회사 | Forming method of metal wiring in semiconductor device |
-
1996
- 1996-06-29 KR KR1019960025767A patent/KR980005615A/en not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100480576B1 (en) * | 1997-12-15 | 2005-05-16 | 삼성전자주식회사 | Forming method of metal wiring in semiconductor device |
KR100472259B1 (en) * | 2001-03-28 | 2005-03-08 | 샤프 가부시키가이샤 | METHOD OF BARRIER METAL SURFACE TREATMENT PRIOR TO Cu DEPOSITION TO IMPROVE ADHESION AND TRENCH FILLING CHARACTERISTICS |
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