KR960026277A - BPSG film formation method of semiconductor device - Google Patents

BPSG film formation method of semiconductor device Download PDF

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Publication number
KR960026277A
KR960026277A KR1019940038556A KR19940038556A KR960026277A KR 960026277 A KR960026277 A KR 960026277A KR 1019940038556 A KR1019940038556 A KR 1019940038556A KR 19940038556 A KR19940038556 A KR 19940038556A KR 960026277 A KR960026277 A KR 960026277A
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KR
South Korea
Prior art keywords
bpsg
semiconductor device
film
bpsg film
reactor
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KR1019940038556A
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Korean (ko)
Inventor
정창원
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김주용
현대전자산업 주식회사
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Priority to KR1019940038556A priority Critical patent/KR960026277A/en
Publication of KR960026277A publication Critical patent/KR960026277A/en

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Abstract

본 발명은 반도체 소자의 BPSG막 형성방법에 관한 것으로, 평탄화를 위한 리플로우공정시 막표면에 발생되는 결정결함을 방지하기 위하여 BPSG막을 증착한 후 그 상부에 수분투과억제력이 큰 실리콘질화막을 형성하므로써 리플로우시 막표면의 재결정화를 방지하며 콘택홀의 접촉저항을 개선시키고 금속배선의 균일성을 향상시켜 소자의 전기적특성이 향상될 수 있도록 한 반도체 소자의 BPSG막 형성방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a BPSG film of a semiconductor device. The present invention relates to a method of forming a BPSG film of a semiconductor device, which prevents recrystallization of a film surface during reflow, improves contact resistance of a contact hole, and improves uniformity of metal wiring, thereby improving electrical characteristics of the device.

Description

반도체 소자의 비피에스지(BPSG)막 형성방법.Method for forming a BPSG film of a semiconductor device.

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (6)

반도체 소자의 BPSG막 형성방법에 있어서, 소정온도의 반응로 내에서 반응가스를 플로우시켜 BPSG를 증착시키는 단계와; 상기 단계로부터 대기와의 수분접촉을 방지하기 위해여 N2가스를 사용하여 반응로의 내부가 대기와 접촉되는 것을 차단시키는 단계와, 상기 단계로부터 연속공정으로 반응로의 온도를 상승시킨 후 상기 BPSG 막 상부에 실리콘질화막(Si3N4)을 증착하는 단계와, 상기 단계로부터 상기 BPSG막을 평탄화시키기 위하여 리플로우공정을 실시하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 BPSG막 형성방법.A method of forming a BPSG film of a semiconductor device, comprising: depositing a BPSG by flowing a reaction gas in a reactor at a predetermined temperature; Blocking the inside of the reactor from contact with the atmosphere by using N 2 gas to prevent moisture contact with the atmosphere from the step, and after raising the temperature of the reactor in a continuous process from the step, the BPSG And depositing a silicon nitride film (Si 3 N 4 ) on the film, and performing a reflow process to planarize the BPSG film from the step. 제1항에 있어서, 상기 BPSG막 증착시 도핑소오스인 인(P)에 대한 붕소(B)의 몰비는 2.0 이하인 것을 특징으로 하는 반도체 소자의 BPSG막 형성방법.The method of claim 1, wherein the molar ratio of boron (B) to phosphorus (P), which is a doping source, is 2.0 or less when depositing the BPSG film. 제1항에 있어서, 상기 BPSG증착시 반응가스는 SiH4, PH3,B2H6,O2및 N2가스를 사용하며, 반응로의 온도는 400 내지 450℃인 것을 특징으로 하는 반도체 소자의 BPSG막 형성방법.The semiconductor device of claim 1, wherein the reaction gas is SiH 4 , PH 3 , B 2 H 6 , O 2, and N 2 gas, and the temperature of the reactor is 400 to 450 ° C. when the BPSG is deposited. BPSG film formation method. 제1항에 있어서, 상기 실리콘질화막 증착시 소오스가스는 SiH4, NH3및 N2가스를 사용하며, 반응로의 온도는 850 내지 950℃인 것을 특징으로 하는 반도체 소자의 BPSG막 형성방법.The method of claim 1, wherein the source gas is SiH 4 , NH 3, and N 2 gas, and the temperature of the reactor is 850 to 950 ° C. when the silicon nitride film is deposited. 제1 또는 제4항에 있어서, 상기 실리콘질화막의 두께는 1000 내지 1500Å 정도인 것을 특징으로 하는 반도체 소자의 BPSG막 형성방법.The method for forming a BPSG film of a semiconductor device according to claim 1 or 4, wherein the silicon nitride film has a thickness of about 1000 to 1500 mW. 제1항에 있어서, 상기 리플로우공정은 상기 실리콘질화막 증착시와 동일한 온도상태에서 실식되는 것을 특징으로 하는 반도체 소자의 BPSG막 형성방법.The method of claim 1, wherein the reflow process is performed at the same temperature as the silicon nitride film is deposited. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940038556A 1994-12-29 1994-12-29 BPSG film formation method of semiconductor device KR960026277A (en)

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KR1019940038556A KR960026277A (en) 1994-12-29 1994-12-29 BPSG film formation method of semiconductor device

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Application Number Priority Date Filing Date Title
KR1019940038556A KR960026277A (en) 1994-12-29 1994-12-29 BPSG film formation method of semiconductor device

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KR960026277A true KR960026277A (en) 1996-07-22

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100322523B1 (en) * 1995-02-22 2002-06-20 윤종용 Method for planarizing semiconductor device with capping layer
KR100417645B1 (en) * 1996-12-28 2004-04-13 주식회사 하이닉스반도체 Method for forming interlayer dielectric of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100322523B1 (en) * 1995-02-22 2002-06-20 윤종용 Method for planarizing semiconductor device with capping layer
KR100417645B1 (en) * 1996-12-28 2004-04-13 주식회사 하이닉스반도체 Method for forming interlayer dielectric of semiconductor device

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