KR960026277A - BPSG film formation method of semiconductor device - Google Patents
BPSG film formation method of semiconductor device Download PDFInfo
- Publication number
- KR960026277A KR960026277A KR1019940038556A KR19940038556A KR960026277A KR 960026277 A KR960026277 A KR 960026277A KR 1019940038556 A KR1019940038556 A KR 1019940038556A KR 19940038556 A KR19940038556 A KR 19940038556A KR 960026277 A KR960026277 A KR 960026277A
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- KR
- South Korea
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- bpsg
- semiconductor device
- film
- bpsg film
- reactor
- Prior art date
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
본 발명은 반도체 소자의 BPSG막 형성방법에 관한 것으로, 평탄화를 위한 리플로우공정시 막표면에 발생되는 결정결함을 방지하기 위하여 BPSG막을 증착한 후 그 상부에 수분투과억제력이 큰 실리콘질화막을 형성하므로써 리플로우시 막표면의 재결정화를 방지하며 콘택홀의 접촉저항을 개선시키고 금속배선의 균일성을 향상시켜 소자의 전기적특성이 향상될 수 있도록 한 반도체 소자의 BPSG막 형성방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a BPSG film of a semiconductor device. The present invention relates to a method of forming a BPSG film of a semiconductor device, which prevents recrystallization of a film surface during reflow, improves contact resistance of a contact hole, and improves uniformity of metal wiring, thereby improving electrical characteristics of the device.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940038556A KR960026277A (en) | 1994-12-29 | 1994-12-29 | BPSG film formation method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940038556A KR960026277A (en) | 1994-12-29 | 1994-12-29 | BPSG film formation method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
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KR960026277A true KR960026277A (en) | 1996-07-22 |
Family
ID=66769993
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940038556A KR960026277A (en) | 1994-12-29 | 1994-12-29 | BPSG film formation method of semiconductor device |
Country Status (1)
Country | Link |
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KR (1) | KR960026277A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100322523B1 (en) * | 1995-02-22 | 2002-06-20 | 윤종용 | Method for planarizing semiconductor device with capping layer |
KR100417645B1 (en) * | 1996-12-28 | 2004-04-13 | 주식회사 하이닉스반도체 | Method for forming interlayer dielectric of semiconductor device |
-
1994
- 1994-12-29 KR KR1019940038556A patent/KR960026277A/en not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100322523B1 (en) * | 1995-02-22 | 2002-06-20 | 윤종용 | Method for planarizing semiconductor device with capping layer |
KR100417645B1 (en) * | 1996-12-28 | 2004-04-13 | 주식회사 하이닉스반도체 | Method for forming interlayer dielectric of semiconductor device |
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