KR950034595A - Oxide film formation method of semiconductor device - Google Patents
Oxide film formation method of semiconductor device Download PDFInfo
- Publication number
- KR950034595A KR950034595A KR1019940011479A KR19940011479A KR950034595A KR 950034595 A KR950034595 A KR 950034595A KR 1019940011479 A KR1019940011479 A KR 1019940011479A KR 19940011479 A KR19940011479 A KR 19940011479A KR 950034595 A KR950034595 A KR 950034595A
- Authority
- KR
- South Korea
- Prior art keywords
- oxide film
- forming
- semiconductor device
- gas
- film
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Formation Of Insulating Films (AREA)
Abstract
본 발명은 반도체 소자의 산화막 형성방법에 관한 것으로, 반도체 소자의 제조공정중 게이트 산화막 또는 층간 절연 산화막을 형성함에 있어, LPCVD 장비에서 CVD 방식으로 SiH4개스와 N2O 개스를 이용하여 산화막을 증착시킨 후 동일한 장비에서 연속적으로 N2O 개스를 이용하여 어닐링(Annealing)을 진행하므로써 양질의 산화막을 얻을 수 있는 반도체 소자의 산화막 형성방법에 관한 것이다.The present invention relates to a method of forming an oxide film of a semiconductor device, in forming a gate oxide film or an interlayer insulating oxide film during a semiconductor device manufacturing process, depositing an oxide film using SiH 4 gas and N 2 O gas by CVD in an LPCVD apparatus. The present invention relates to a method for forming an oxide film of a semiconductor device in which a high quality oxide film can be obtained by annealing using N 2 O gas continuously in the same equipment.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1A도 내지 제1C도는 본 발명에 의한 반도체 소자의 산화막 형성방법을 설명하기 위해 도시한 단면도.1A to 1C are cross-sectional views for explaining the oxide film forming method of a semiconductor device according to the present invention.
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940011479A KR0119965B1 (en) | 1994-05-26 | 1994-05-26 | Oxidation method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940011479A KR0119965B1 (en) | 1994-05-26 | 1994-05-26 | Oxidation method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
KR950034595A true KR950034595A (en) | 1995-12-28 |
KR0119965B1 KR0119965B1 (en) | 1997-10-17 |
Family
ID=19383796
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940011479A KR0119965B1 (en) | 1994-05-26 | 1994-05-26 | Oxidation method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR0119965B1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100282413B1 (en) * | 1996-10-24 | 2001-03-02 | 김영환 | Thin film formation method using nitrous oxide gas |
KR100332129B1 (en) * | 1995-12-29 | 2002-11-07 | 주식회사 하이닉스반도체 | Method for forming oxide layer in semiconductor device |
-
1994
- 1994-05-26 KR KR1019940011479A patent/KR0119965B1/en not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100332129B1 (en) * | 1995-12-29 | 2002-11-07 | 주식회사 하이닉스반도체 | Method for forming oxide layer in semiconductor device |
KR100282413B1 (en) * | 1996-10-24 | 2001-03-02 | 김영환 | Thin film formation method using nitrous oxide gas |
Also Published As
Publication number | Publication date |
---|---|
KR0119965B1 (en) | 1997-10-17 |
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