KR960001787B1 - Semiconductor memory device capable of output organization - Google Patents

Semiconductor memory device capable of output organization Download PDF

Info

Publication number
KR960001787B1
KR960001787B1 KR92017206A KR920017206A KR960001787B1 KR 960001787 B1 KR960001787 B1 KR 960001787B1 KR 92017206 A KR92017206 A KR 92017206A KR 920017206 A KR920017206 A KR 920017206A KR 960001787 B1 KR960001787 B1 KR 960001787B1
Authority
KR
South Korea
Prior art keywords
memory device
semiconductor memory
device capable
output organization
organization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR92017206A
Other languages
English (en)
Korean (ko)
Other versions
KR930006726A (ko
Inventor
Yoshinori Okajima
Yoshihide Sato
Shinnosuke Kamata
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of KR930006726A publication Critical patent/KR930006726A/ko
Application granted granted Critical
Publication of KR960001787B1 publication Critical patent/KR960001787B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
KR92017206A 1991-09-20 1992-09-21 Semiconductor memory device capable of output organization Expired - Fee Related KR960001787B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP91-241043 1991-09-20
JP3241043A JP2743653B2 (ja) 1991-09-20 1991-09-20 半導体記憶装置

Publications (2)

Publication Number Publication Date
KR930006726A KR930006726A (ko) 1993-04-21
KR960001787B1 true KR960001787B1 (en) 1996-02-05

Family

ID=17068465

Family Applications (1)

Application Number Title Priority Date Filing Date
KR92017206A Expired - Fee Related KR960001787B1 (en) 1991-09-20 1992-09-21 Semiconductor memory device capable of output organization

Country Status (5)

Country Link
US (1) US5280456A (enExample)
EP (1) EP0533578B1 (enExample)
JP (1) JP2743653B2 (enExample)
KR (1) KR960001787B1 (enExample)
DE (1) DE69224951T2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0973778A (ja) * 1995-09-01 1997-03-18 Texas Instr Japan Ltd アドレスアクセスパスのコントロール回路
US5715197A (en) 1996-07-29 1998-02-03 Xilinx, Inc. Multiport RAM with programmable data port configuration
KR100388225B1 (ko) * 1996-11-12 2003-10-04 주식회사 하이닉스반도체 센서앰프 출력 조정회로
US6049501A (en) * 1998-12-14 2000-04-11 Motorola, Inc. Memory data bus architecture and method of configuring multi-wide word memories
JP4112729B2 (ja) 1999-02-16 2008-07-02 株式会社ルネサステクノロジ 半導体装置
KR100490657B1 (ko) * 2000-12-30 2005-05-24 주식회사 하이닉스반도체 메모리 출력능력의 가변제어 장치 및 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150179A (en) * 1979-05-04 1980-11-21 Fujitsu Ltd Semiconductor memory unit
JPS61992A (ja) * 1984-06-14 1986-01-06 Matsushita Electric Ind Co Ltd 半導体メモリ
JPS629586A (ja) * 1985-07-08 1987-01-17 Oki Electric Ind Co Ltd 半導体ランダムアクセスメモリ装置
JPH0697560B2 (ja) * 1987-11-19 1994-11-30 三菱電機株式会社 半導体記憶装置
JPH02168496A (ja) * 1988-09-14 1990-06-28 Kawasaki Steel Corp 半導体メモリ回路
EP0608967A3 (en) * 1989-02-18 1994-08-24 Sony Corporation Memory devices
DE69020384T2 (de) * 1989-02-27 1996-03-21 Nippon Electric Co Integrierte Halbleiterspeicherschaltung mit Möglichkeit zum Maskieren des Schreibens im Speicher.
JPH02282990A (ja) * 1989-04-25 1990-11-20 Fujitsu Ltd 半導体記憶装置
JP2603145B2 (ja) * 1990-03-09 1997-04-23 三菱電機株式会社 半導体集積回路装置

Also Published As

Publication number Publication date
KR930006726A (ko) 1993-04-21
DE69224951D1 (de) 1998-05-07
EP0533578A2 (en) 1993-03-24
DE69224951T2 (de) 1998-07-30
EP0533578A3 (enExample) 1995-04-12
JP2743653B2 (ja) 1998-04-22
EP0533578B1 (en) 1998-04-01
US5280456A (en) 1994-01-18
JPH0581865A (ja) 1993-04-02

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