KR960001706B1 - 다결정 실리콘의 제조방법 및 장치 - Google Patents

다결정 실리콘의 제조방법 및 장치 Download PDF

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Publication number
KR960001706B1
KR960001706B1 KR1019930009354A KR930009354A KR960001706B1 KR 960001706 B1 KR960001706 B1 KR 960001706B1 KR 1019930009354 A KR1019930009354 A KR 1019930009354A KR 930009354 A KR930009354 A KR 930009354A KR 960001706 B1 KR960001706 B1 KR 960001706B1
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KR
South Korea
Prior art keywords
light source
laser
energy
substrate
thin film
Prior art date
Application number
KR1019930009354A
Other languages
English (en)
Korean (ko)
Inventor
이재원
Original Assignee
삼성전자주식회사
김광호
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사, 김광호 filed Critical 삼성전자주식회사
Priority to KR1019930009354A priority Critical patent/KR960001706B1/ko
Priority to JP872594A priority patent/JPH06345415A/ja
Application granted granted Critical
Publication of KR960001706B1 publication Critical patent/KR960001706B1/ko

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  • Recrystallisation Techniques (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1019930009354A 1993-05-27 1993-05-27 다결정 실리콘의 제조방법 및 장치 KR960001706B1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1019930009354A KR960001706B1 (ko) 1993-05-27 1993-05-27 다결정 실리콘의 제조방법 및 장치
JP872594A JPH06345415A (ja) 1993-05-27 1994-01-28 多結晶シリコンの製造方法および装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930009354A KR960001706B1 (ko) 1993-05-27 1993-05-27 다결정 실리콘의 제조방법 및 장치

Publications (1)

Publication Number Publication Date
KR960001706B1 true KR960001706B1 (ko) 1996-02-03

Family

ID=19356217

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930009354A KR960001706B1 (ko) 1993-05-27 1993-05-27 다결정 실리콘의 제조방법 및 장치

Country Status (2)

Country Link
JP (1) JPH06345415A (ja)
KR (1) KR960001706B1 (ja)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001326190A (ja) * 2000-05-17 2001-11-22 Nec Corp 薄膜処理方法及び薄膜処理装置
US6451631B1 (en) * 2000-08-10 2002-09-17 Hitachi America, Ltd. Thin film crystal growth by laser annealing
JP4919546B2 (ja) * 2000-09-18 2012-04-18 東芝モバイルディスプレイ株式会社 多結晶シリコン膜の形成方法
JP2004111584A (ja) 2002-09-18 2004-04-08 Sanyo Electric Co Ltd 半導体装置の製造方法
JP4481562B2 (ja) * 2002-11-29 2010-06-16 キヤノン株式会社 結晶性薄膜の製造方法
JP4515034B2 (ja) 2003-02-28 2010-07-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7018468B2 (en) * 2003-11-13 2006-03-28 Sharp Laboratories Of America, Inc. Process for long crystal lateral growth in silicon films by UV and IR pulse sequencing
JP2005166813A (ja) * 2003-12-01 2005-06-23 Sharp Corp 結晶性半導体膜の形成方法及び結晶性半導体膜、並びに半導体装置の製造方法及び半導体装置
JP2006135192A (ja) * 2004-11-08 2006-05-25 Sharp Corp 半導体デバイスの製造方法と製造装置
JP2006135232A (ja) * 2004-11-09 2006-05-25 Sharp Corp 半導体デバイスの製造方法と製造装置
JP2006210413A (ja) * 2005-01-25 2006-08-10 Sharp Corp 投影マスクならびに半導体デバイスの製造方法および製造装置
JP4581764B2 (ja) * 2005-03-15 2010-11-17 日立電線株式会社 薄膜半導体装置の製造方法
KR100740124B1 (ko) * 2006-10-13 2007-07-16 삼성에스디아이 주식회사 다결정 실리콘 박막 트랜지스터 및 그 제조방법
JP2007288219A (ja) * 2007-07-06 2007-11-01 Sumitomo Heavy Ind Ltd レーザ照射装置
JP2014239182A (ja) * 2013-06-10 2014-12-18 東京エレクトロン株式会社 微細構造形成方法、半導体デバイスの製造方法、及びｃｍｏｓの形成方法
JP2018022712A (ja) * 2014-12-10 2018-02-08 東京エレクトロン株式会社 微細構造形成方法、半導体デバイスの製造方法、及びｃｍｏｓの形成方法

Also Published As

Publication number Publication date
JPH06345415A (ja) 1994-12-20

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