KR950024277A - Pattern formation method for thickness monitor of semiconductor device - Google Patents

Pattern formation method for thickness monitor of semiconductor device Download PDF

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Publication number
KR950024277A
KR950024277A KR1019940000875A KR19940000875A KR950024277A KR 950024277 A KR950024277 A KR 950024277A KR 1019940000875 A KR1019940000875 A KR 1019940000875A KR 19940000875 A KR19940000875 A KR 19940000875A KR 950024277 A KR950024277 A KR 950024277A
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South Korea
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oxide film
monitor
monitor pattern
pattern
thickness
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KR1019940000875A
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Korean (ko)
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KR100278646B1 (en
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문홍배
유성재
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김광호
삼성전자 주식회사
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Priority to KR1019940000875A priority Critical patent/KR100278646B1/en
Publication of KR950024277A publication Critical patent/KR950024277A/en
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  • Local Oxidation Of Silicon (AREA)
  • Drying Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

연속된 산화막질의 선택적 식각공정을 갖는 반도체 장치의 두께 모니터용 패턴 형성 방법에 관하여 개시한다. 기판상에 요부형태로 제1모니터 패턴, 제2모니터 패턴 및 제3모니터 패턴과 그 사이에 철부를 형성하고 상기 제1, 제2, 제3모니터 패턴을 양분하여 부분적으로 필드 산화막을 형성한다. 이어서 상기 기판 전면에 제1산화막을 형성한후 상기 제1모니터 패턴상의 상기 제1산화막 및 필드 산화막과 상기 철부상의 상기 제1산화막을 선택적으로 식각한다. 그 다음에 상기 결과물 전면에 제2산화막을 형성하고 상기 제2모니터 패턴상의 상기 제2산화막, 제1산화막 및 필드 산화막과 상기 철부상의 제2산화막을 선택적으로 식각한다. 그 다음에 상기 결과물 전면에 제3산화막을 형성하고 상기 제3두께 모니터 패턴상의 상기 제3산화막, 제2산화막, 제1산화막 및 필드 산화막과 상기 철부상의 제3산화막을 선택적으로 식각한다. 본 발명에 의하면, 선택 식각 공정의 공정 안정성을 유지할 수있고, 개개의 공정문제점을 공정 진행중에 각 스텝에서 바로 알수 있어서 개개의 문제점을 이전 공정으로 바로 피드 백하여 반도체 장치의 신뢰성 향상과 경제적 손실을 최소화 할 수 있다A method for forming a thickness monitor for a semiconductor device having a continuous etching process of an oxide film is disclosed. The first monitor pattern, the second monitor pattern, and the third monitor pattern are formed on the substrate, and convex portions are formed therebetween, and the first, second, and third monitor patterns are bisected to form a field oxide film. Subsequently, after the first oxide film is formed on the entire surface of the substrate, the first oxide film and the field oxide film on the first monitor pattern and the first oxide film on the iron portion are selectively etched. Next, a second oxide film is formed over the entire surface of the product, and the second oxide film, the first oxide film and the field oxide film on the second monitor pattern, and the second oxide film on the iron portion are selectively etched. A third oxide film is then formed on the entire surface of the product, and the third oxide film, the second oxide film, the first oxide film and the field oxide film on the third thickness monitor pattern are selectively etched. According to the present invention, the process stability of the selective etching process can be maintained, and individual process problems can be immediately known at each step during the process, so that the individual problems can be directly fed back to the previous process to improve the reliability and economic loss of the semiconductor device. Can be minimized

Description

반도체 장치의 두께 모니터용 패턴 형성방법Pattern formation method for thickness monitor of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2A도 내지 제2E도는 본 발명의 일례에 따른 모니터 패턴을 갖는 레티클을 공정순서대로 도시한 평면도들이다.2A to 2E are plan views showing the reticle having the monitor pattern according to an example of the present invention in the process order.

Claims (4)

기판상에 요부형태로 제1모니터 패턴, 제2모니터 패턴 및 제3모니터 패턴과 그 사이에 철부를 형성하는 단계;상기 제1, 제2, 제3모니터 패턴을 양분하여 부분적으로 필드 산화막을 형성하는 단계;상기 기판 전면에 제1산화막을 형성하는 단계;상기 제1모니터 패턴상의 상기 제1산화막 및 필드 산화막과 상기 철부상의 상기 제1산화막을 선택적으로 식각하는 단계;상기 결과물 전면에 제2산화막을 형성하는 단계 상기 제2모니터 패턴상의 상기 제2산화막, 제1산화막 및 필드 산화막과 상기 철부상의 제2산화막을 선택적으로 식각하는 단계;상기 결과물 전면에 제3산화막을 형성하는 단계;및 상기 제3두께 모니터 패턴상의 상기 제3산화막, 제2산화막, 제1산화막 및 필드 산화막과 상기 철부상의 제3산화막을 선택적으로 식각하는 단계를 포함하는 것을 특징으로 하는 반도체 장치의 두께 모니터용 패턴 형성방법.Forming convex portions between the first monitor pattern, the second monitor pattern, and the third monitor pattern on the substrate, and forming convex portions therebetween; bisecting the first, second, and third monitor patterns to form a field oxide film partially; Forming a first oxide film on the entire surface of the substrate; selectively etching the first oxide film and the field oxide film on the first monitor pattern and the first oxide film on the iron portion; Forming an oxide film; selectively etching the second oxide film, the first oxide film and the field oxide film on the second monitor pattern, and the second oxide film on the iron portion; forming a third oxide film on the entire surface of the resultant; and And selectively etching the third oxide film, the second oxide film, the first oxide film and the field oxide film on the third thickness monitor pattern, and the third oxide film on the iron portion. A method for forming a thickness monitor for a semiconductor device. 제1항에 있어서, 상기 모니터 패턴은 상기 선택적으로 식각이 진행되는 수 만큼 더 형성하는 것을 특징으로 하는 반도체 장치의 두께 모니터용 패턴 형성 방법.The method of claim 1, wherein the monitor pattern is further formed by the number of selectively etching. 제1항에 있어서, 상기 제1, 제2, 제3모니터 패턴은 반도체 기판의 스크라이브 라인 영역에 형성하는 것을 특징으로 하는 반도체장치의 두께 모니터용 패턴 형성방법.The method of claim 1, wherein the first, second, and third monitor patterns are formed in a scribe line region of the semiconductor substrate. 제1항에 있어서, 상기 제 1, 제2, 제3 모니터 패턴을 사용한 두께모니터 방법은 각 모니터 패턴상에 식각된 각 박막의 두께를 비교하여 측정하는 것을 특징으로 하는 반도체 장치의 두께 모니터용 패턴 형성방법.The thickness monitor pattern of claim 1, wherein the thickness monitor method using the first, second, and third monitor patterns compares and measures a thickness of each thin film etched on each monitor pattern. Formation method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940000875A 1994-01-18 1994-01-18 Pattern formation method for thickness monitor of semiconductor device KR100278646B1 (en)

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KR1019940000875A KR100278646B1 (en) 1994-01-18 1994-01-18 Pattern formation method for thickness monitor of semiconductor device

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KR1019940000875A KR100278646B1 (en) 1994-01-18 1994-01-18 Pattern formation method for thickness monitor of semiconductor device

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KR950024277A true KR950024277A (en) 1995-08-21
KR100278646B1 KR100278646B1 (en) 2001-01-15

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