KR950011629B1 - 박막 전계발광 표시소자의 구조 및 제조방법 - Google Patents
박막 전계발광 표시소자의 구조 및 제조방법 Download PDFInfo
- Publication number
- KR950011629B1 KR950011629B1 KR1019920011093A KR920011093A KR950011629B1 KR 950011629 B1 KR950011629 B1 KR 950011629B1 KR 1019920011093 A KR1019920011093 A KR 1019920011093A KR 920011093 A KR920011093 A KR 920011093A KR 950011629 B1 KR950011629 B1 KR 950011629B1
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- light
- thin film
- light emitting
- back electrode
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title description 2
- 230000031700 light absorption Effects 0.000 claims description 12
- 238000005401 electroluminescence Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 238000001039 wet etching Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (3)
- 투명기판과; 상기 기판 위에 막대형태로 형성되는 투명전극과; 상기 투명전극 사이의 에칭된 부분에 막대형태로 형성되는 제1광흡수층과; 상기 투명전극 및 제1광흡수층 상부에 형성되는 제1절연층과; 상기 제1절연층 상부에 형성되는 발광층과; 상기 발광층 상부에 형성되는 제2절연층과; 상기 제2절연층 상부에서 상기 투명전극이 형성된 발광화소영역에 형성되는 제2광흡수층과; 상기 제2광흡수층 상부에 형성되는 배면전극으로 구성되는 것을 특징으로 하는 박막전계발광표시소자의 구조.
- 제1항에 있어서, 상기 제2광흡수층과 배면전극 사이에 누설전류를 방지하는 저항층을 더 형성하는 것을 특징으로 하는 박막전계발광표시소자의 구조.
- 제2항에 있어서, 상기 제2광흡수층이 형성된 영역은, 상기 배면전극과 투명전극 사이의 발광화소영역과 동일한 영역임을 특징으로 하는 박막전계발광표시소자의 구조.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920011093A KR950011629B1 (ko) | 1992-06-25 | 1992-06-25 | 박막 전계발광 표시소자의 구조 및 제조방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920011093A KR950011629B1 (ko) | 1992-06-25 | 1992-06-25 | 박막 전계발광 표시소자의 구조 및 제조방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR950011629B1 true KR950011629B1 (ko) | 1995-10-06 |
Family
ID=19335232
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019920011093A KR950011629B1 (ko) | 1992-06-25 | 1992-06-25 | 박막 전계발광 표시소자의 구조 및 제조방법 |
Country Status (1)
Country | Link |
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KR (1) | KR950011629B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7338844B2 (en) | 2003-10-14 | 2008-03-04 | Seiko Epson Corporation | Method of manufacturing electro-optical device having a plurality of unit regions arranged in a matrix |
-
1992
- 1992-06-25 KR KR1019920011093A patent/KR950011629B1/ko not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7338844B2 (en) | 2003-10-14 | 2008-03-04 | Seiko Epson Corporation | Method of manufacturing electro-optical device having a plurality of unit regions arranged in a matrix |
US7601943B2 (en) | 2003-10-14 | 2009-10-13 | Seiko Epson Corporation | Electro-optical device having electro-optical elements provided selectively at pixel regions and electronic apparatus |
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