KR950009226B1 - 출력 데이타 정보를 잡음으로부터 보호하기 위한 데이타 래칭 유니트를 구비한 비동기 억세스형 반도체 메모리 디바이스 - Google Patents

출력 데이타 정보를 잡음으로부터 보호하기 위한 데이타 래칭 유니트를 구비한 비동기 억세스형 반도체 메모리 디바이스 Download PDF

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Publication number
KR950009226B1
KR950009226B1 KR1019910018003A KR910018003A KR950009226B1 KR 950009226 B1 KR950009226 B1 KR 950009226B1 KR 1019910018003 A KR1019910018003 A KR 1019910018003A KR 910018003 A KR910018003 A KR 910018003A KR 950009226 B1 KR950009226 B1 KR 950009226B1
Authority
KR
South Korea
Prior art keywords
level
logic
unit
signal
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019910018003A
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English (en)
Korean (ko)
Other versions
KR920008747A (ko
Inventor
미찌노리 가마야
Original Assignee
닛본덴기 가부시끼가이샤
세끼모또 타다히로
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Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=17564210&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR950009226(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 닛본덴기 가부시끼가이샤, 세끼모또 타다히로 filed Critical 닛본덴기 가부시끼가이샤
Publication of KR920008747A publication Critical patent/KR920008747A/ko
Application granted granted Critical
Publication of KR950009226B1 publication Critical patent/KR950009226B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
KR1019910018003A 1990-10-15 1991-10-14 출력 데이타 정보를 잡음으로부터 보호하기 위한 데이타 래칭 유니트를 구비한 비동기 억세스형 반도체 메모리 디바이스 Expired - Fee Related KR950009226B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP90-276058 1990-10-15
JP2276058A JP2781651B2 (ja) 1990-10-15 1990-10-15 Icメモリ回路

Publications (2)

Publication Number Publication Date
KR920008747A KR920008747A (ko) 1992-05-28
KR950009226B1 true KR950009226B1 (ko) 1995-08-18

Family

ID=17564210

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910018003A Expired - Fee Related KR950009226B1 (ko) 1990-10-15 1991-10-14 출력 데이타 정보를 잡음으로부터 보호하기 위한 데이타 래칭 유니트를 구비한 비동기 억세스형 반도체 메모리 디바이스

Country Status (5)

Country Link
US (1) US5315559A (https=)
EP (1) EP0481425B1 (https=)
JP (1) JP2781651B2 (https=)
KR (1) KR950009226B1 (https=)
DE (1) DE69123693T2 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960000837B1 (ko) * 1992-12-02 1996-01-13 삼성전자주식회사 반도체 메모리장치

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2070372B (en) * 1980-01-31 1983-09-28 Tokyo Shibaura Electric Co Semiconductor memory device
JPS56165983A (en) * 1980-05-26 1981-12-19 Toshiba Corp Semiconductor storage device
JPS60254485A (ja) * 1984-05-31 1985-12-16 Nec Corp スタテイツク型半導体記憶装置
JPS615493A (ja) * 1984-06-20 1986-01-11 Hitachi Ltd 記憶装置
JPS62173692A (ja) * 1986-01-28 1987-07-30 Fujitsu Ltd 半導体集積回路
JP2577724B2 (ja) * 1986-07-31 1997-02-05 三菱電機株式会社 半導体記憶装置
US4959816A (en) * 1987-12-28 1990-09-25 Kabushiki Kaisha Toshiba Semiconductor integrated circuit
US4922461A (en) * 1988-03-30 1990-05-01 Kabushiki Kaisha Toshiba Static random access memory with address transition detector
JPH0271493A (ja) * 1988-09-06 1990-03-12 Mitsubishi Electric Corp 半導体メモリ装置
JPH0814989B2 (ja) * 1989-05-09 1996-02-14 日本電気株式会社 内部同期型スタティックram

Also Published As

Publication number Publication date
JPH04153989A (ja) 1992-05-27
DE69123693D1 (de) 1997-01-30
JP2781651B2 (ja) 1998-07-30
DE69123693T2 (de) 1997-07-03
KR920008747A (ko) 1992-05-28
EP0481425A2 (en) 1992-04-22
EP0481425B1 (en) 1996-12-18
US5315559A (en) 1994-05-24
EP0481425A3 (https=) 1994-12-14

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