KR950009226B1 - 출력 데이타 정보를 잡음으로부터 보호하기 위한 데이타 래칭 유니트를 구비한 비동기 억세스형 반도체 메모리 디바이스 - Google Patents
출력 데이타 정보를 잡음으로부터 보호하기 위한 데이타 래칭 유니트를 구비한 비동기 억세스형 반도체 메모리 디바이스 Download PDFInfo
- Publication number
- KR950009226B1 KR950009226B1 KR1019910018003A KR910018003A KR950009226B1 KR 950009226 B1 KR950009226 B1 KR 950009226B1 KR 1019910018003 A KR1019910018003 A KR 1019910018003A KR 910018003 A KR910018003 A KR 910018003A KR 950009226 B1 KR950009226 B1 KR 950009226B1
- Authority
- KR
- South Korea
- Prior art keywords
- level
- logic
- unit
- signal
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP90-276058 | 1990-10-15 | ||
| JP2276058A JP2781651B2 (ja) | 1990-10-15 | 1990-10-15 | Icメモリ回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR920008747A KR920008747A (ko) | 1992-05-28 |
| KR950009226B1 true KR950009226B1 (ko) | 1995-08-18 |
Family
ID=17564210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019910018003A Expired - Fee Related KR950009226B1 (ko) | 1990-10-15 | 1991-10-14 | 출력 데이타 정보를 잡음으로부터 보호하기 위한 데이타 래칭 유니트를 구비한 비동기 억세스형 반도체 메모리 디바이스 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5315559A (https=) |
| EP (1) | EP0481425B1 (https=) |
| JP (1) | JP2781651B2 (https=) |
| KR (1) | KR950009226B1 (https=) |
| DE (1) | DE69123693T2 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR960000837B1 (ko) * | 1992-12-02 | 1996-01-13 | 삼성전자주식회사 | 반도체 메모리장치 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2070372B (en) * | 1980-01-31 | 1983-09-28 | Tokyo Shibaura Electric Co | Semiconductor memory device |
| JPS56165983A (en) * | 1980-05-26 | 1981-12-19 | Toshiba Corp | Semiconductor storage device |
| JPS60254485A (ja) * | 1984-05-31 | 1985-12-16 | Nec Corp | スタテイツク型半導体記憶装置 |
| JPS615493A (ja) * | 1984-06-20 | 1986-01-11 | Hitachi Ltd | 記憶装置 |
| JPS62173692A (ja) * | 1986-01-28 | 1987-07-30 | Fujitsu Ltd | 半導体集積回路 |
| JP2577724B2 (ja) * | 1986-07-31 | 1997-02-05 | 三菱電機株式会社 | 半導体記憶装置 |
| US4959816A (en) * | 1987-12-28 | 1990-09-25 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit |
| US4922461A (en) * | 1988-03-30 | 1990-05-01 | Kabushiki Kaisha Toshiba | Static random access memory with address transition detector |
| JPH0271493A (ja) * | 1988-09-06 | 1990-03-12 | Mitsubishi Electric Corp | 半導体メモリ装置 |
| JPH0814989B2 (ja) * | 1989-05-09 | 1996-02-14 | 日本電気株式会社 | 内部同期型スタティックram |
-
1990
- 1990-10-15 JP JP2276058A patent/JP2781651B2/ja not_active Expired - Lifetime
-
1991
- 1991-10-14 KR KR1019910018003A patent/KR950009226B1/ko not_active Expired - Fee Related
- 1991-10-15 EP EP91117574A patent/EP0481425B1/en not_active Expired - Lifetime
- 1991-10-15 DE DE69123693T patent/DE69123693T2/de not_active Expired - Fee Related
- 1991-10-15 US US07/775,422 patent/US5315559A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04153989A (ja) | 1992-05-27 |
| DE69123693D1 (de) | 1997-01-30 |
| JP2781651B2 (ja) | 1998-07-30 |
| DE69123693T2 (de) | 1997-07-03 |
| KR920008747A (ko) | 1992-05-28 |
| EP0481425A2 (en) | 1992-04-22 |
| EP0481425B1 (en) | 1996-12-18 |
| US5315559A (en) | 1994-05-24 |
| EP0481425A3 (https=) | 1994-12-14 |
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