JPS56165983A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS56165983A
JPS56165983A JP6994380A JP6994380A JPS56165983A JP S56165983 A JPS56165983 A JP S56165983A JP 6994380 A JP6994380 A JP 6994380A JP 6994380 A JP6994380 A JP 6994380A JP S56165983 A JPS56165983 A JP S56165983A
Authority
JP
Japan
Prior art keywords
precharge
trs
storage device
high speed
semiconductor storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6994380A
Other languages
Japanese (ja)
Other versions
JPS6362839B2 (en
Inventor
Kiyobumi Ochii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6994380A priority Critical patent/JPS56165983A/en
Priority to GB8102332A priority patent/GB2070372B/en
Priority to DE3102799A priority patent/DE3102799C2/en
Priority to US06/230,000 priority patent/US4417328A/en
Publication of JPS56165983A publication Critical patent/JPS56165983A/en
Publication of JPS6362839B2 publication Critical patent/JPS6362839B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/418—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/061—Sense amplifier enabled by a address transition detection related control signal

Abstract

PURPOSE:To enable high speed operation, by starting the precharge through the detection of change in the memory cycle at an address input transit detecting circuit and completing the precharge according to the bit line bit voltage. CONSTITUTION:When any of address input signals A0... is changed at least, an input transition detecting circuit consisting of delay circuits 110..., transistors (TRs) 120... and an FF32 and the like, detects this to set the FF32. Further, TRs 18, 19 of memory cells MC1... are turned on in response to the rise of a succeeding synchronizing control signal to start precharging of each bit line D and an anti D. The charging voltage of the lines D and anti D is detected at inverters 421, 422, and when either one output is at 0, the FF32 is set via an NOR gate 43 and an inverter 44 to complete the precharge. Thus, the precharge period is not made longer than required and high speed processing can be made for a semiconductor storage device.
JP6994380A 1980-01-31 1980-05-26 Semiconductor storage device Granted JPS56165983A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP6994380A JPS56165983A (en) 1980-05-26 1980-05-26 Semiconductor storage device
GB8102332A GB2070372B (en) 1980-01-31 1981-01-26 Semiconductor memory device
DE3102799A DE3102799C2 (en) 1980-01-31 1981-01-28 Semiconductor memory device
US06/230,000 US4417328A (en) 1980-01-31 1981-01-30 Random access semiconductor memory device using MOS transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6994380A JPS56165983A (en) 1980-05-26 1980-05-26 Semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS56165983A true JPS56165983A (en) 1981-12-19
JPS6362839B2 JPS6362839B2 (en) 1988-12-05

Family

ID=13417236

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6994380A Granted JPS56165983A (en) 1980-01-31 1980-05-26 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS56165983A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60182096A (en) * 1984-02-29 1985-09-17 Fujitsu Ltd Semiconductor memory device
US4558435A (en) * 1983-05-31 1985-12-10 Rca Corporation Memory system
JPS61113186A (en) * 1984-07-09 1986-05-31 テキサス　インスツルメンツ　インコ−ポレイテツド Transition detecting circuit
US4638462A (en) * 1985-01-31 1987-01-20 International Business Machines Corporation Self-timed precharge circuit
US4761769A (en) * 1985-08-02 1988-08-02 Oki Electric Industry Co., Ltd. MOS read-only memory device
JPS63188887A (en) * 1987-01-23 1988-08-04 シーメンス、アクチエンゲゼルシヤフト Semiconductor memory
JPS6435795A (en) * 1987-07-30 1989-02-06 Nec Corp Semiconductor memory circuit
JPH02105391A (en) * 1988-10-13 1990-04-17 Nec Corp Precharging circuit
JPH03134890A (en) * 1989-10-20 1991-06-07 Nec Corp Circuit for sensing change of input signal
US5315559A (en) * 1990-10-15 1994-05-24 Nec Corporation Asynchronous access type semiconductor memory device equipped with data latching unit for preventing output data information from noises
JPH06230867A (en) * 1992-12-31 1994-08-19 Hyundai Electron Ind Co Ltd Driver circuit of pulse write
JPH073355U (en) * 1993-06-24 1995-01-20 株式会社ホシノ Stand type storage

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4558435A (en) * 1983-05-31 1985-12-10 Rca Corporation Memory system
JPS60182096A (en) * 1984-02-29 1985-09-17 Fujitsu Ltd Semiconductor memory device
JPS61113186A (en) * 1984-07-09 1986-05-31 テキサス　インスツルメンツ　インコ−ポレイテツド Transition detecting circuit
US4638462A (en) * 1985-01-31 1987-01-20 International Business Machines Corporation Self-timed precharge circuit
US4761769A (en) * 1985-08-02 1988-08-02 Oki Electric Industry Co., Ltd. MOS read-only memory device
JPS63188887A (en) * 1987-01-23 1988-08-04 シーメンス、アクチエンゲゼルシヤフト Semiconductor memory
JPS6435795A (en) * 1987-07-30 1989-02-06 Nec Corp Semiconductor memory circuit
JPH02105391A (en) * 1988-10-13 1990-04-17 Nec Corp Precharging circuit
JPH03134890A (en) * 1989-10-20 1991-06-07 Nec Corp Circuit for sensing change of input signal
US5315559A (en) * 1990-10-15 1994-05-24 Nec Corporation Asynchronous access type semiconductor memory device equipped with data latching unit for preventing output data information from noises
JPH06230867A (en) * 1992-12-31 1994-08-19 Hyundai Electron Ind Co Ltd Driver circuit of pulse write
JPH073355U (en) * 1993-06-24 1995-01-20 株式会社ホシノ Stand type storage

Also Published As

Publication number Publication date
JPS6362839B2 (en) 1988-12-05

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