KR950006452A - Manufacturing Method of Thin Film Gas Sensor - Google Patents

Manufacturing Method of Thin Film Gas Sensor Download PDF

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Publication number
KR950006452A
KR950006452A KR1019930017294A KR930017294A KR950006452A KR 950006452 A KR950006452 A KR 950006452A KR 1019930017294 A KR1019930017294 A KR 1019930017294A KR 930017294 A KR930017294 A KR 930017294A KR 950006452 A KR950006452 A KR 950006452A
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KR
South Korea
Prior art keywords
film
gas sensor
forming
sio
sno
Prior art date
Application number
KR1019930017294A
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Korean (ko)
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KR960007786B1 (en
Inventor
신현우
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이헌조
주식회사 금성사
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Priority to KR1019930017294A priority Critical patent/KR960007786B1/en
Publication of KR950006452A publication Critical patent/KR950006452A/en
Application granted granted Critical
Publication of KR960007786B1 publication Critical patent/KR960007786B1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid

Abstract

본 발명은 반도체 박막가스센서의 제조방법에 관한 것으로, 종래 불균일한 조성을 갖는 감지막으로 인한 가스센서의 불안정한 특성을 개선하기 위하여 기판(1)위에 산화막(2)을 증착하는 공정과, 상기 산화막(2)상에 히터(3)를 형성하는 공정, 상기 히터(3)가 형성된 산화막(1)전면에 보호막(4)을 증착하는 공정, 상기 보호막(4)상에 전극(5)을 형성하는 공정, 상기 전극(5)위에 SiO2가 첨가된 SnO2/Pd감지막(6)을 형성하는 공정, 및 상기 기판(1)의 후면을 식각하는 공정으로 이루어지는 것을 특징으로 하는 박막가스센서의 제조방법을 제공함으로써 가스에 따른 일정한 선택성을 가지면서 균일한 조성으로 이루어진 감지막의 제조가 가능하게 됨에 따라 우수한 특성의 반도체 박막가스센서를 실현할 수 있다.The present invention relates to a method for manufacturing a semiconductor thin film gas sensor, the process of depositing an oxide film (2) on the substrate (1) in order to improve the unstable characteristics of the gas sensor due to the conventional sensing film having a non-uniform composition, and the oxide film ( 2) forming the heater 3 on the step, depositing the protective film 4 on the entire surface of the oxide film 1 on which the heater 3 is formed, and forming the electrode 5 on the protective film 4 And forming a SnO 2 / Pd sensing film 6 containing SiO 2 on the electrode 5 and etching the back surface of the substrate 1. Since it is possible to manufacture a sensing film having a uniform composition with a uniform selectivity according to the gas, it is possible to realize a semiconductor thin film gas sensor with excellent characteristics.

Description

박막가스센서의 제조방법Manufacturing Method of Thin Film Gas Sensor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 종래의 SnO2가스센서의 구조도,1 is a structural diagram of a conventional SnO 2 gas sensor,

제2도는 종래의 SnO2가스센서의 구동 회로도,2 is a driving circuit diagram of a conventional SnO 2 gas sensor,

제3도는 본 발명의 박막가스센서의 제조 공정도,3 is a manufacturing process chart of the thin film gas sensor of the present invention,

제4도의 가스감도특성 측정장치 구성도,4 is a configuration diagram of a gas sensitivity characteristic measuring apparatus of FIG.

제5도의 가스감도특성 곡선.Gas sensitivity characteristic curve of FIG.

Claims (5)

기판(1)위에 산화막(2)을 증착하는 공정과, 상기 산화막(2)상에 히터(3)를 형성하는 공정, 상기 히터(3)가 형성된 산화막(1)전면에 보호막(4)을 증착하는 공정, 상기 보호막(4)상에 전극(5)을 형성하는 공정, 상기 전극(5)위에 SnO2/Pd/SiO2감지막(6)을 형성하는 공정, 및 상기 기판(1)의 후면을 식각하는 공정으로 이루어지는 것을 특징으로 하는 박막가스센서의 제조방법.Depositing an oxide film 2 on the substrate 1, forming a heater 3 on the oxide film 2, and depositing a protective film 4 on the entire surface of the oxide film 1 on which the heater 3 is formed. Forming the electrode 5 on the protective film 4, forming a SnO 2 / Pd / SiO 2 sensing film 6 on the electrode 5, and forming a back surface of the substrate 1. Method of manufacturing a thin film gas sensor, characterized in that consisting of a step of etching. 제1항에 있어서, 상기 감지막(6)을 형성하는 공정은 SnO2/Pd 타겟과 SiO2타겟을 동시에 스퍼터링하여 SnO2/Pd/SiO2막을 증착하여 행하는 것을 특징으로 하는 박막가스센서의 제조방법.The method of claim 1 wherein the production of thin-film gas sensor, characterized in that for performing the step of forming the sensing film 6 and by sputtering SnO 2 / Pd target and SiO 2 target at the same time, SnO 2 / Pd / SiO 2 deposited film Way. 제1항에 있어서, 상기 SnO2/Pd/SiO2감지막의 Pd함량은 0.1-2.0wt%임을 특징으로 하는 박막가스센서의 제조방법.The method of claim 1, wherein the Sn content of the SnO 2 / Pd / SiO 2 film has a Pd content of 0.1-2.0 wt%. 제1항에 있어서, 상기 SnO2/Pd/SiO2감지막에서 SiO2의 첨가량은 5~15wt%임을 특징으로 하는 박막가스센서의 제조방법.The method of claim 1, wherein the amount of SiO 2 added in the SnO 2 / Pd / SiO 2 sensing film is 5 to 15 wt%. 제1항에 있어서, 상기 박막가스센서의 동작온도 범위는 200~500℃인 것을 특징으로 하는 박막가스센서의 제조방법.The method of claim 1, wherein the operating temperature range of the thin film gas sensor is 200 to 500 ° C. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930017294A 1993-08-31 1993-08-31 Gas sensor manufacturing method KR960007786B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930017294A KR960007786B1 (en) 1993-08-31 1993-08-31 Gas sensor manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930017294A KR960007786B1 (en) 1993-08-31 1993-08-31 Gas sensor manufacturing method

Publications (2)

Publication Number Publication Date
KR950006452A true KR950006452A (en) 1995-03-21
KR960007786B1 KR960007786B1 (en) 1996-06-12

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KR1019930017294A KR960007786B1 (en) 1993-08-31 1993-08-31 Gas sensor manufacturing method

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10858730B2 (en) 2016-12-14 2020-12-08 Korea University Research And Business Foundation Multilayer thin films exhibiting perpendicular magnetic anisotropy
US10903416B2 (en) 2016-12-14 2021-01-26 Korea University Research And Business Foundation Alloy thin films exhibiting perpendicular magnetic anisotropy

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10858730B2 (en) 2016-12-14 2020-12-08 Korea University Research And Business Foundation Multilayer thin films exhibiting perpendicular magnetic anisotropy
US10903416B2 (en) 2016-12-14 2021-01-26 Korea University Research And Business Foundation Alloy thin films exhibiting perpendicular magnetic anisotropy

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Publication number Publication date
KR960007786B1 (en) 1996-06-12

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