JPH06118045A - Humidity sensor - Google Patents

Humidity sensor

Info

Publication number
JPH06118045A
JPH06118045A JP26760892A JP26760892A JPH06118045A JP H06118045 A JPH06118045 A JP H06118045A JP 26760892 A JP26760892 A JP 26760892A JP 26760892 A JP26760892 A JP 26760892A JP H06118045 A JPH06118045 A JP H06118045A
Authority
JP
Japan
Prior art keywords
humidity sensor
sensitive film
moisture sensitive
film
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP26760892A
Other languages
Japanese (ja)
Inventor
Satoshi Chiba
悟志 千葉
Tatsuo Hama
辰男 濱
Masahisa Ikejiri
昌久 池尻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP26760892A priority Critical patent/JPH06118045A/en
Publication of JPH06118045A publication Critical patent/JPH06118045A/en
Pending legal-status Critical Current

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  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

PURPOSE:To provide a humidity sensor with good mass productivity and high reliability in which the process is simplified and a process suitable for mass production can be used. CONSTITUTION:A moisture sensitive film 1 is formed on a silicon base 3 by screen printing, and SiO2 is spattered around the moisture sensitive film 1 to form an insulating film 4. Cr, Au are evaporated on the insulating film 4 to cover at least the whole moisture sensitive film 1, whereby an electrode 2 is formed to form a humidity sensor. The silicon base 2 is used as a part of the electrode 2.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、湿度に対応して素子の
電気的特性が変化することにより湿度を検出する湿度セ
ンサに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a humidity sensor for detecting humidity by changing electric characteristics of an element in response to humidity.

【0002】[0002]

【従来の技術】近年、湿度計測、湿度制御を必要とする
分野が増加し、湿度センサの重要性が認められるように
なった。
2. Description of the Related Art In recent years, the number of fields requiring humidity measurement and humidity control has increased, and the importance of humidity sensors has come to be recognized.

【0003】湿度に対応して素子の電気的特性が変化す
ることにより湿度を検出する湿度センサには、電解質
系、金属系、高分子系、セラミックス系等があり、それ
ぞれいろいろな系が研究されているが、現在実用化され
ているものは、高分子系およびセラミックス系の湿度セ
ンサである。いずれも、素子に対する水の吸脱着によ
り、素子の抵抗値または静電容量が変化する性質を利用
したものである。
Humidity sensors that detect humidity by changing the electrical characteristics of the element in response to humidity include electrolyte-based, metal-based, polymer-based, and ceramic-based humidity sensors, and various systems have been studied. However, polymer and ceramic humidity sensors are currently in practical use. All of them utilize the property that the resistance value or capacitance of the element changes due to the adsorption and desorption of water with respect to the element.

【0004】基板にはアルミナ、ガラス等の絶縁体が用
いられ、この基板上に櫛形電極、感湿膜を形成するか、
基板上に下部電極、感湿膜、上部電極を形成したサンド
ウィッチ形構造にするのが一般的である。
An insulator such as alumina or glass is used for the substrate, and a comb-shaped electrode or a moisture sensitive film is formed on this substrate.
A sandwich type structure in which a lower electrode, a moisture sensitive film and an upper electrode are formed on a substrate is generally used.

【0005】[0005]

【発明が解決しようとする課題】しかし、従来の湿度セ
ンサの感湿膜の多くは、高分子系およびセラミックス系
であるため、耐酸性、耐アルカリ性、耐水性など悪く、
感湿膜を形成した後のプロセスが制限されていた。ま
た、感湿膜の信頼性においても問題があった。
However, since most of the moisture-sensitive films of conventional humidity sensors are polymer type and ceramic type, they are poor in acid resistance, alkali resistance, water resistance, etc.
The process after forming the moisture sensitive film was limited. There is also a problem in the reliability of the moisture sensitive film.

【0006】そのうえ、従来の湿度センサは、電極を形
成する場合、工程が複雑になり、コストが高くなる、と
いう問題があった。さらに、基板として絶縁体を使用し
た場合、導電体を使用した場合と比べ熱伝導率が小さく
なるため、湿度センサの熱対応が遅くなるという問題が
あった。
In addition, the conventional humidity sensor has a problem that the process is complicated and the cost is increased when the electrode is formed. Further, when an insulator is used as the substrate, the thermal conductivity becomes smaller than that when a conductor is used, so there is a problem that the heat response of the humidity sensor becomes slow.

【0007】そこで本発明はこのような問題点を解決す
るものでその目的とするところは、量産性が良く、熱対
応が良く、信頼性の高い湿度センサを提供するところに
ある。
Therefore, the present invention solves such a problem, and an object of the present invention is to provide a humidity sensor having good mass productivity, good heat resistance, and high reliability.

【0008】[0008]

【課題を解決するための手段】本発明の湿度センサは、
導電性基板上に感湿膜が形成され、導電性基板上の感湿
膜の周囲の一部または全部に絶縁膜が形成され、この感
湿膜および絶縁膜上に感湿膜を覆うように少なくとも1
個の電極が形成され、導電性基板を電極の一部として用
いることを特徴とする。
The humidity sensor of the present invention comprises:
A moisture sensitive film is formed on a conductive substrate, an insulating film is formed on a part or all of the periphery of the moisture sensitive film on the conductive substrate, and the moisture sensitive film is covered on the moisture sensitive film and the insulating film. At least 1
One electrode is formed, and the conductive substrate is used as a part of the electrode.

【0009】導電性基板はステンレス、銅、アルミ等の
金属板または、導電性のセラミックスでよい。絶縁性基
板の表面に、導電性物質をコーティングしたものでもよ
い。導電性基板にシリコンを用いると、大量生産に適し
たシリコンプロセスが使え、量産性、信頼性の両面から
好ましい。
The conductive substrate may be a metal plate such as stainless steel, copper or aluminum, or conductive ceramics. The surface of the insulating substrate may be coated with a conductive substance. When silicon is used for the conductive substrate, a silicon process suitable for mass production can be used, which is preferable in terms of mass productivity and reliability.

【0010】少なくとも感湿膜の部分をすべて覆うよう
に金電極を形成すると、電解質溶液に浸漬しても特性が
変化しない、信頼性の非常に高い湿度センサを得ること
ができる。その上からさらに、少なくとも感湿膜上の電
極の部分はすべて覆われるように、含フッ素高分子膜を
形成すると、より信頼性の高い湿度センサを得ることが
できる。
When the gold electrode is formed so as to cover at least the moisture sensitive film, it is possible to obtain a highly reliable humidity sensor whose characteristics do not change even when immersed in an electrolyte solution. If a fluorine-containing polymer film is formed so that at least the electrode portion on the moisture sensitive film is entirely covered therewith, a more reliable humidity sensor can be obtained.

【0011】[0011]

【実施例】【Example】

(実施例1)水100mlに、エタノール100ml、
酢酸マンガン80g、酢酸鉛20g、酢酸カリウム10
gを加え、1時間撹拌し、感湿膜用コーティング液を作
成した。
(Example 1) 100 ml of water, 100 ml of ethanol,
Manganese acetate 80 g, lead acetate 20 g, potassium acetate 10
g was added and the mixture was stirred for 1 hour to prepare a coating liquid for a moisture-sensitive film.

【0012】シリコン基板に、このコーティング液をス
クリーン印刷し、700℃で1時間熱処理し、感湿膜を
形成した。この感湿膜の周囲にSiO2をスパッタし、
絶縁膜を形成した。この感湿膜及び絶縁膜上に、Cr、
Auを蒸着し、電極を形成した。このようにして作成し
た湿度センサの断面図を図1、平面図を図2に示す。図
1、図2において、1は感湿膜、2は電極、3は基板、
4は絶縁膜である。なお絶縁膜は図3のように感湿膜の
一部にかかってもよい。
This coating solution was screen-printed on a silicon substrate and heat-treated at 700 ° C. for 1 hour to form a moisture sensitive film. Sputter SiO 2 around this moisture sensitive film,
An insulating film was formed. On the moisture-sensitive film and the insulating film, Cr,
Au was vapor-deposited to form an electrode. A cross-sectional view of the humidity sensor thus produced is shown in FIG. 1, and a plan view thereof is shown in FIG. 1 and 2, 1 is a moisture sensitive film, 2 is an electrode, 3 is a substrate,
Reference numeral 4 is an insulating film. The insulating film may cover a part of the moisture sensitive film as shown in FIG.

【0013】本湿度センサの感湿特性を図4に示す。図
4より、本発明の湿度センサは、抵抗値が低く、抵抗値
の変化幅が適当であり、しかも温度によって特性が変化
しないので、使いやすいことがわかる。本湿度センサを
60℃90%の恒温恒湿槽中に1000時間放置後、特
性を測定したところ、図4と測定誤差の範囲内で同様で
あった。したがって、本湿度センサは、耐久性、信頼性
が高いことがわかる。また、温度変化に対する応答は1
0秒以内、湿度変化に対する応答は5秒以内と十分速か
った。さらに、本湿度センサは、製造工程が単純である
ため、量産性がよく、安価に製造できることがわかる。
FIG. 4 shows the humidity-sensitive characteristics of this humidity sensor. It can be seen from FIG. 4 that the humidity sensor of the present invention has a low resistance value, an appropriate change width of the resistance value, and the characteristics do not change with temperature, and thus is easy to use. The humidity sensor was left to stand in a constant temperature and humidity chamber at 60 ° C. and 90% for 1000 hours, and the characteristics were measured. The results were the same as those in FIG. 4 within the measurement error range. Therefore, it can be seen that this humidity sensor has high durability and reliability. Also, the response to temperature change is 1.
Within 0 seconds, the response to changes in humidity was sufficiently fast, within 5 seconds. Further, since the humidity sensor has a simple manufacturing process, it can be easily mass-produced and can be manufactured at low cost.

【0014】(実施例2)実施例1で作成した湿度セン
サに、溶媒可溶性含フッ素高分子をパーフルオロ溶媒に
溶解した溶液(7重量%)を、少なくとも感湿膜上の電
極はすべて覆われるように、スクリーン印刷し、180
℃で1時間熱処理し、含フッ素高分子膜を形成した。こ
のようにして作成した湿度センサの断面図を図5に示
す。図5において、1は感湿膜、2は電極、3は基板、
4は絶縁膜、5は含フッ素高分子膜である。本湿度セン
サの特性は、実施例1で作成した湿度センサと同様であ
った。本湿度センサを60℃の飽和食塩水に100時間
浸漬後、特性を測定したところ、図4と測定誤差の範囲
内で同様であった。したがって、本湿度センサは、極め
て耐久性、信頼性が高いことがわかる。
Example 2 The humidity sensor prepared in Example 1 is covered with a solution (7% by weight) of a solvent-soluble fluorine-containing polymer dissolved in a perfluoro solvent, at least all electrodes on the moisture-sensitive film are covered. Screen-print, 180
It heat-processed at 1 degreeC for 1 hour, and formed the fluorine-containing polymer film. A cross-sectional view of the humidity sensor thus produced is shown in FIG. In FIG. 5, 1 is a moisture sensitive film, 2 is an electrode, 3 is a substrate,
Reference numeral 4 is an insulating film, and 5 is a fluorine-containing polymer film. The characteristics of this humidity sensor were similar to those of the humidity sensor created in Example 1. After the humidity sensor was immersed in a saturated saline solution at 60 ° C. for 100 hours and then the characteristics were measured, it was the same as in FIG. Therefore, it can be seen that this humidity sensor is extremely durable and highly reliable.

【0015】なお、本実施例ではセラミックス系の感湿
膜を用いたが、他の成分のセラミックス系感湿膜、高分
子系の感湿膜でもよい。また、本実施例では湿度を抵抗
値で検出しているが、静電容量で検出してもよい。
Although the ceramic moisture sensitive film is used in this embodiment, a ceramic moisture sensitive film of another component or a polymer moisture sensitive film may be used. Further, in this embodiment, the humidity is detected by the resistance value, but it may be detected by the capacitance.

【0016】[0016]

【発明の効果】以上述べたように本発明の湿度センサ
は、導電性基板上に感湿膜、絶縁膜を形成し、感湿膜を
すべて覆うように電極を形成するため製造工程が簡単に
なり熱応答が速くなる。また、導電性基板にシリコンを
用いると、量産性、信頼性の高い湿度センサが得られ
る。
As described above, in the humidity sensor of the present invention, the humidity sensitive film and the insulating film are formed on the conductive substrate, and the electrodes are formed so as to cover all the moisture sensitive film, so that the manufacturing process is simplified. The thermal response becomes faster. Moreover, when silicon is used for the conductive substrate, a humidity sensor having high mass productivity and high reliability can be obtained.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の湿度センサの断面図。FIG. 1 is a cross-sectional view of a humidity sensor of the present invention.

【図2】本発明の湿度センサの平面図。FIG. 2 is a plan view of the humidity sensor of the present invention.

【図3】本発明の湿度センサの断面図。FIG. 3 is a sectional view of the humidity sensor of the present invention.

【図4】本発明の湿度センサの感湿特性図。FIG. 4 is a humidity sensitive characteristic diagram of the humidity sensor of the present invention.

【図5】本発明の湿度センサの断面図。FIG. 5 is a sectional view of the humidity sensor of the present invention.

【符号の説明】[Explanation of symbols]

1 感湿膜 2 電極 3 基板 4 絶縁膜 5 含フッ素高分子膜 1 moisture sensitive film 2 electrode 3 substrate 4 insulating film 5 fluoropolymer film

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 導電性基板上に感湿膜が形成され、導電
性基板上の感湿膜の周囲の一部または全部に絶縁膜が形
成され、この感湿膜および絶縁膜上に感湿膜を覆うよう
に少なくとも1個の電極が形成され、導電性基板を電極
の一部として用いることを特徴とする湿度センサ。
1. A moisture sensitive film is formed on a conductive substrate, an insulating film is formed on a part or all of the periphery of the moisture sensitive film on the conductive substrate, and the moisture sensitive film is formed on the moisture sensitive film and the insulating film. A humidity sensor, wherein at least one electrode is formed so as to cover the film, and a conductive substrate is used as a part of the electrode.
【請求項2】 導電性基板としてシリコンを用いること
を特徴とする請求項1記載の湿度センサ。
2. The humidity sensor according to claim 1, wherein silicon is used as the conductive substrate.
【請求項3】 電極として金を用いることを特徴とする
請求項1、請求項2記載の湿度センサ。
3. The humidity sensor according to claim 1, wherein gold is used as the electrode.
【請求項4】 少なくとも感湿膜上の電極の部分はすべ
て覆われるように、含フッ素高分子膜が形成されている
ことを特徴とする請求項1ないし請求項3記載の湿度セ
ンサ。
4. The humidity sensor according to claim 1, wherein the fluorine-containing polymer film is formed so that at least the electrode portion on the moisture-sensitive film is entirely covered.
JP26760892A 1992-10-06 1992-10-06 Humidity sensor Pending JPH06118045A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26760892A JPH06118045A (en) 1992-10-06 1992-10-06 Humidity sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26760892A JPH06118045A (en) 1992-10-06 1992-10-06 Humidity sensor

Publications (1)

Publication Number Publication Date
JPH06118045A true JPH06118045A (en) 1994-04-28

Family

ID=17447087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26760892A Pending JPH06118045A (en) 1992-10-06 1992-10-06 Humidity sensor

Country Status (1)

Country Link
JP (1) JPH06118045A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7332995B2 (en) 2005-04-22 2008-02-19 Denso Corporation Capacitive humidity sensor and method for manufacturing the same
US7471093B2 (en) 2006-03-13 2008-12-30 Denso Corporation Capacitive humidity sensor
US7644615B2 (en) 2005-11-07 2010-01-12 Denso Corporation Humidity sensor having humidity sensitive film and method for manufacturing the same
JP2016170172A (en) * 2015-03-10 2016-09-23 国立大学法人信州大学 Capacitive gas sensor and manufacturing method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7332995B2 (en) 2005-04-22 2008-02-19 Denso Corporation Capacitive humidity sensor and method for manufacturing the same
US7644615B2 (en) 2005-11-07 2010-01-12 Denso Corporation Humidity sensor having humidity sensitive film and method for manufacturing the same
US7471093B2 (en) 2006-03-13 2008-12-30 Denso Corporation Capacitive humidity sensor
JP2016170172A (en) * 2015-03-10 2016-09-23 国立大学法人信州大学 Capacitive gas sensor and manufacturing method thereof

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