JPH04308612A - Transparent conductive membrane and manufacture thereof, transparent conductive film, and analog touch-panel - Google Patents
Transparent conductive membrane and manufacture thereof, transparent conductive film, and analog touch-panelInfo
- Publication number
- JPH04308612A JPH04308612A JP3156276A JP15627691A JPH04308612A JP H04308612 A JPH04308612 A JP H04308612A JP 3156276 A JP3156276 A JP 3156276A JP 15627691 A JP15627691 A JP 15627691A JP H04308612 A JPH04308612 A JP H04308612A
- Authority
- JP
- Japan
- Prior art keywords
- transparent conductive
- conductive film
- film
- indium
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000012528 membrane Substances 0.000 title abstract 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910003437 indium oxide Inorganic materials 0.000 claims abstract description 19
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 14
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 19
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 15
- 239000012808 vapor phase Substances 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical compound [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 abstract 1
- 239000010408 film Substances 0.000 description 63
- 239000007789 gas Substances 0.000 description 13
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 230000007613 environmental effect Effects 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 229920006267 polyester film Polymers 0.000 description 8
- 229910052738 indium Inorganic materials 0.000 description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 6
- 238000001755 magnetron sputter deposition Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- 229910000510 noble metal Inorganic materials 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920006289 polycarbonate film Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Position Input By Displaying (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、透明導電膜およびその
製造法と、透明導電フイルムと、アナログ式タツチパネ
ルとに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transparent conductive film, a method for manufacturing the same, a transparent conductive film, and an analog touch panel.
【０００２】0002
【従来の技術】従来、液晶デイスプレイ、エレクトロル
ミネツセンスデイスプレイ、エレクトロクロミツクデイ
スプレイなどの表示素子の電極、太陽電池などの光電変
換素子の窓電極、あるいは透明タツチパネルなどの入力
装置の電極として、透明導電膜が利用されている。[Prior Art] Conventionally, transparent A conductive film is used.
【０００３】表示素子や光電変換素子の電極として用い
る場合は、一般に低抵抗であることが望まれる。しかし
、タツチパネルなどの入力装置の電極として用いる場合
は、タツチパネルの構造により要求特性は異なるが、ア
ナログ式といわれる方式では、消費電力、位置検出精度
といつた点から、高抵抗であり、かつ均一であることが
望まれ、また液晶などのデイスプレイ上に重ね合わせて
用いることから高透明であることも望まれ、さらに機械
的強度を兼ね備えていることも要求される。[0003] When used as an electrode for a display element or a photoelectric conversion element, low resistance is generally desired. However, when used as an electrode for an input device such as a touch panel, the required characteristics differ depending on the structure of the touch panel, but the so-called analog method requires high resistance and uniform resistance in terms of power consumption and position detection accuracy. It is desired that the material be highly transparent, since it will be used by superimposing it on a display such as a liquid crystal display, and it is also required that it have mechanical strength.
【０００４】従来公知の透明導電膜としては、金、銀、
白金、パラジウムなどの貴金属薄膜と、酸化インジウム
、酸化第二スズ、酸化インジウム・スズ、酸化亜鉛など
の酸化物半導体薄膜とが知られている。前者の貴金属薄
膜は、抵抗値の低いものが容易に得られるが、透明性に
劣る。一方、後者の酸化物半導体薄膜は、抵抗値は貴金
属薄膜に比し劣る（たとえば、酸化インジウム・スズの
抵抗率は通常８×１／１００００Ω・ｃｍ程度である）
が、透明性はすぐれており、光透過率は一般に８２〜９
０％程度である。Conventionally known transparent conductive films include gold, silver,
Noble metal thin films such as platinum and palladium, and oxide semiconductor thin films such as indium oxide, stannic oxide, indium tin oxide, and zinc oxide are known. The former noble metal thin film can easily be obtained with a low resistance value, but is inferior in transparency. On the other hand, the latter oxide semiconductor thin film has a resistance value inferior to that of a noble metal thin film (for example, the resistivity of indium tin oxide is usually about 8 x 1/10000 Ωcm).
However, the transparency is excellent, and the light transmittance is generally 82 to 9.
It is about 0%.
【０００５】これらの透明導電膜は、その用途における
要求特性から適宜選択して使い分けられているが、抵抗
率の低下および安定性の向上を目的として、酸化インジ
ウムに酸化第二スズを通常５〜１５重量％の割合でドー
ピングさせた酸化インジウム・スズ膜が最も広く用いら
れている。[0005] These transparent conductive films are appropriately selected and used depending on the characteristics required for the application, but for the purpose of reducing resistivity and improving stability, stannic oxide is usually added to indium oxide in an amount of 5 to 50%. Indium tin oxide films doped at a rate of 15% by weight are most widely used.
【０００６】アナログ式タツチパネル用の透明導電膜で
は、先にも述べたように、高透明、均一性、耐環境性（
たとえば高温・高湿雰囲気下での安定性）、さらに位置
検出精度、消費電力の面から高シート抵抗であるといつ
た特性が望まれる。従来、この種の用途目的には、主に
透明性などの理由から、シート抵抗が３００〜４００Ω
／□程度の酸化インジウム・スズ膜が用いられることが
多かつた。As mentioned above, transparent conductive films for analog touch panels have high transparency, uniformity, and environmental resistance (
For example, characteristics such as high sheet resistance are desired from the viewpoints of stability under high temperature and high humidity atmospheres), position detection accuracy, and power consumption. Conventionally, sheet resistance of 300 to 400 Ω was used for this type of application, mainly for reasons such as transparency.
/□ indium tin oxide films were often used.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、最近で
は、タツチパネルの高性能化を達成するべく、透明性を
犠牲にせずに、さらに高抵抗（シート抵抗が５００〜２
０００Ω）の透明導電膜が望まれるようになつている。[Problems to be Solved by the Invention] However, recently, in order to achieve higher performance of touch panels, even higher resistance (sheet resistance of 500 to 2
000Ω) transparent conductive films are becoming desirable.
【０００８】従来の酸化インジウム・スズ膜でシート抵
抗を高くする方法として、酸化度を上げる方法と膜厚を
薄くする方法が一般的に知られているが、いずれの方法
を用いても得られる透明導電膜は耐環境性（耐熱性、耐
湿熱性）に劣り、批抗値の著しい変化を生じるといつた
問題があつた。[0008] As a method of increasing the sheet resistance of a conventional indium tin oxide film, it is generally known to increase the degree of oxidation and to reduce the film thickness, but it can be obtained by using either method. The problem with transparent conductive films is that they have poor environmental resistance (heat resistance, heat and humidity resistance), and can cause significant changes in resistivity.
【０００９】本発明は、上記従来の事情に鑑み、高抵抗
でかつ良好な透明性を有すると共に、耐環境性にもすぐ
れた透明導電膜を提供すること、また、この透明導電膜
を透明絶縁基板上に設けてなる透明導電フイルムとこれ
を用いた高性能なアナログ式タツチパネルを提供するこ
とを目的としている。In view of the above-mentioned conventional circumstances, it is an object of the present invention to provide a transparent conductive film having high resistance, good transparency, and excellent environmental resistance. The purpose of this invention is to provide a transparent conductive film formed on a substrate and a high-performance analog touch panel using the same.
【００１０】0010
【課題を解決するための手段】本発明者らは、上記の目
的を達成するために、鋭意検討した結果、酸化インジウ
ムまたは酸化インジウム・スズからなる透明導電膜をス
パツタ蒸着法などの気相法で成膜するにあたり、成膜雰
囲気中に特定状態の窒素ガスを含ませるようにしたとき
に、得られる膜中に窒素がドーピングされて、これが膜
の抵抗値を高め、これにより高抵抗でかつ良好な透明性
およびすぐれた耐環境性を有する透明導電膜が容易に得
られることを知り、本発明を完成するに至つた。[Means for Solving the Problems] In order to achieve the above object, the present inventors have made extensive studies and have developed a transparent conductive film made of indium oxide or indium tin oxide using a vapor phase method such as a sputter deposition method. When forming a film using nitrogen gas in a specific state in the film forming atmosphere, the resulting film is doped with nitrogen, which increases the resistance value of the film. The present invention was completed based on the discovery that a transparent conductive film having good transparency and excellent environmental resistance can be easily obtained.
【００１１】すなわち、本発明は、酸化インジウムまた
は酸化インジウム・スズに窒素がドーピングされている
ことを特徴とする透明導電膜に係るものであり、またこ
の透明導電膜の製造法として、気相法による酸化インジ
ウムまたは酸化インジウム・スズの成膜に際し、その雰
囲気中にイオン化または励起された窒素ガスを含ませる
ようにしたことを特徴とする透明導電膜の製造法に係る
ものである。That is, the present invention relates to a transparent conductive film characterized in that indium oxide or indium tin oxide is doped with nitrogen, and as a method for manufacturing this transparent conductive film, a vapor phase method is used. The present invention relates to a method for manufacturing a transparent conductive film, characterized in that ionized or excited nitrogen gas is included in the atmosphere during the formation of a film of indium oxide or indium tin oxide.
【００１２】また、本発明は、上記構成の透明導電膜が
透明絶縁基板の少なくとも一方の面に設けられているこ
とを特徴とする透明導電フイルムと、さらに、この透明
導電フイルムを電極として用いたことを特徴とするアナ
ログ式タツチパネルとに係るものである。The present invention also provides a transparent conductive film characterized in that a transparent conductive film having the above structure is provided on at least one surface of a transparent insulating substrate, and a transparent conductive film characterized in that the transparent conductive film is used as an electrode. This invention relates to an analog touch panel characterized by the following.
【００１３】[0013]
【発明の構成・作用】本発明における透明導電膜は、上
述のように、酸化インジウムに窒素がドーピングされて
いるか、あるいは酸化インジウム・スズに窒素がドーピ
ングされているかのいずれかであり、特に後者の酸化イ
ンジウム・スズは酸化インジウムに酸化第二スズが通常
５〜１５重量％ドーピングされていることによつて、前
者の酸化インジウム単独のものに比べより安定性などの
面ですぐれている。[Structure and operation of the invention] As mentioned above, the transparent conductive film of the present invention is either indium oxide doped with nitrogen or indium tin oxide doped with nitrogen, especially the latter. Indium tin oxide is superior in terms of stability and the like compared to the former indium oxide alone because indium oxide is doped with stannic oxide in an amount of usually 5 to 15% by weight.
【００１４】このような透明導電膜において、窒素のド
ーピング量は要求される抵抗率によつて適宜設定するこ
とができるが、一般には酸化インジウムまたは酸化イン
ジウム・スズに対して窒素元素量で少なくとも０．２５
重量％以上、好ましくは０．３６重量％以上であるのが
よい。過少では本発明の効果を期待しにくい。In such a transparent conductive film, the amount of nitrogen doped can be appropriately set depending on the required resistivity, but generally the amount of nitrogen element is at least 0 relative to indium oxide or indium tin oxide. .25
The amount should be at least 0.36% by weight, preferably at least 0.36% by weight. If the amount is too small, it is difficult to expect the effects of the present invention.
【００１５】本発明の透明導電膜は、気相法による成膜
に際し、成膜雰囲気中にイオン化または励起された窒素
ガスを含ませることにより、この窒素を酸化インジウム
または酸化インジウム・スズの膜中にドーピングさせる
ことによつて作製される。ここで、窒素のドーピングの
有無は、ＥＳＣＡ分析によつて確認でき、その量は、窒
素ガスの導入量やそのイオン化または励起の手段などを
適当に選ぶことにより、任意に調整することができる。The transparent conductive film of the present invention is produced by adding ionized or excited nitrogen gas to the film-forming atmosphere during film-forming using a vapor phase method. It is produced by doping. Here, the presence or absence of nitrogen doping can be confirmed by ESCA analysis, and the amount can be arbitrarily adjusted by appropriately selecting the amount of nitrogen gas introduced and the means for ionizing or exciting it.
【００１６】イオン化または励起の手段は、特に限定さ
れず、用いる気相法の種類に応じて適宜選択することが
できる。気相法の種類は、電子ビーム蒸着法、スパツタ
蒸着法、イオンプレーテイング法などがあり、均一性と
いう点で、スパツタ蒸着法が特に好ましく、イオンプレ
ーテイング法も好ましく採用できる。The means for ionization or excitation is not particularly limited and can be appropriately selected depending on the type of gas phase method used. Types of vapor phase methods include electron beam evaporation, sputter evaporation, ion plating, etc. From the viewpoint of uniformity, sputter evaporation is particularly preferred, and ion plating can also be preferably employed.
【００１７】スパツタ蒸着法においては、インジウムタ
ーゲツトまたはインジウムとスズの合金ターゲツトを用
いて、アルゴンガスと酸素ガスと窒素ガスの混合ガス雰
囲気下で反応性ＤＣマグネトロンスパツタ法を採用して
行つてもよいし、酸化インジウムターゲツトまたは酸化
インジウムと酸化スズの酸化物ターゲツトを用いて、ア
ルゴンガスと窒素ガスとの混合ガスまたはこれら混合ガ
スに適宜酸素ガスを加えた雰囲気下で高周波マグネトロ
ンスパツタ法を採用して行つてもよい。In the sputtering method, reactive DC magnetron sputtering may be performed using an indium target or an alloy target of indium and tin in a mixed gas atmosphere of argon gas, oxygen gas, and nitrogen gas. Alternatively, using an indium oxide target or an oxide target of indium oxide and tin oxide, a high-frequency magnetron sputtering method is employed in an atmosphere of a mixed gas of argon gas and nitrogen gas, or an atmosphere in which oxygen gas is appropriately added to the mixed gas. You can go.
【００１８】このようにして形成される本発明の透明導
電膜の厚さは、一般に１００〜７００Å、好ましくは１
５０〜４００Åであるのがよい。シート抵抗は、一般に
４５０Ω／□〜５０００Ω／□、好ましくは５００Ω／
□〜２０００Ω／□であり、光透過率としては、一般に
８０％以上、好ましくは８２％以上である。The thickness of the transparent conductive film of the present invention thus formed is generally 100 to 700 Å, preferably 1
The thickness is preferably 50 to 400 Å. Sheet resistance is generally 450Ω/□ to 5000Ω/□, preferably 500Ω/
□ to 2000Ω/□, and the light transmittance is generally 80% or more, preferably 82% or more.
【００１９】本発明においては、上記の透明導電膜を透
明絶縁基板の少なくとも一方の面に設けることにより、
各種電極用などとして有用な透明導電フイルムとするこ
とができる。特に、この透明導電フイルムをアナログ式
タツチパネルの電極として用いると、高抵抗でかつ透明
性および耐環境性にすぐれるという特徴が生かされた、
非常に高性能なタツチパネルを作製できる。In the present invention, by providing the above-mentioned transparent conductive film on at least one surface of the transparent insulating substrate,
It can be made into a transparent conductive film useful for various electrodes. In particular, when this transparent conductive film is used as an electrode for an analog touch panel, its characteristics of high resistance, transparency, and environmental resistance are utilized.
It is possible to create touch panels with very high performance.
【００２０】このような透明導電フイルムにおいて、透
明絶縁基板としては、厚さが通常５０〜２５０μｍ程度
のポリエステルフイルム、ポリカーボネートフイルム、
ポリエーテルサルフオンフイルムなどの透明性にすぐれ
る各種の合成樹脂フイルムが用いられる。[0020] In such a transparent conductive film, the transparent insulating substrate is usually a polyester film, a polycarbonate film, or a polycarbonate film having a thickness of about 50 to 250 μm.
Various synthetic resin films with excellent transparency, such as polyether sulfonate film, are used.
【００２１】[0021]
【発明の効果】以上のように、本発明においては、酸化
インジウムまたは酸化インジウム・スズに窒素をドーピ
ングするようにしたことにより、高抵抗でかつ良好な透
明性およびすぐれた耐環境性を有する透明導電膜を提供
できる。また、この透明導電膜を透明絶縁基板に設けた
透明導電フイルムおよびこれを電極として用いたアナロ
グ式タツチパネルを提供することができる。As described above, in the present invention, by doping indium oxide or indium tin oxide with nitrogen, a transparent material having high resistance, good transparency, and excellent environmental resistance can be obtained. A conductive film can be provided. Furthermore, it is possible to provide a transparent conductive film in which this transparent conductive film is provided on a transparent insulating substrate, and an analog touch panel using the same as an electrode.
【００２２】[0022]
【実施例】つぎに、本発明の実施例を記載してより具体
的に説明する。EXAMPLES Next, examples of the present invention will be described in more detail.
【００２３】実施例１
インジウムにスズを５重量％含有させた合金ターゲツト
を用い、アルゴンガスと酸素ガスと窒素ガスとの容量比
１５：３：５の混合ガス雰囲気下で、反応性ＤＣマグネ
トロンスパツタ装置にて、ポリエステルフイルム上に透
明導電膜を成膜した。Example 1 Using an alloy target containing indium and tin in an amount of 5% by weight, a reactive DC magnetron spacing was conducted in a mixed gas atmosphere of argon gas, oxygen gas, and nitrogen gas in a volume ratio of 15:3:5. A transparent conductive film was formed on a polyester film using an ivy apparatus.
【００２４】実施例２
酸化インジウム（Ｉｎ２ Ｏ３）９０重量％と酸化第
二スズ（ＳｎＯ２）１０重量％の酸化物ターゲツトを用
い、アルゴンガスと窒素ガスとの容量比９：１の混合ガ
ス雰囲気下で、高周波マグネトロンスパツタ装置にて、
ポリエステルフイルム上に透明導電膜を成膜した。Example 2 An oxide target of 90% by weight of indium oxide (In2O3) and 10% by weight of tin oxide (SnO2) was used in a mixed gas atmosphere of argon gas and nitrogen gas at a volume ratio of 9:1. Then, using a high frequency magnetron sputtering device,
A transparent conductive film was formed on a polyester film.
【００２５】比較例１
インジウムにスズを５重量％含有させた合金ターゲツト
を用い、アルゴンガスと酸素ガスとの容量比９：２の混
合ガス雰囲気下で、反応性ＤＣマグネトロンスパツタ装
置にて、ポリエステルフイルム上に透明導電膜を成膜し
た。Comparative Example 1 An alloy target containing 5% by weight of tin in indium was used in a reactive DC magnetron sputtering device under a mixed gas atmosphere of argon gas and oxygen gas at a volume ratio of 9:2. A transparent conductive film was formed on a polyester film.
【００２６】比較例２
酸化インジウム（Ｉｎ２ Ｏ３）９０重量％と酸化第
二スズ（ＳｎＯ２）１０重量％の酸化物ターゲツトを用
い、アルゴンガス雰囲気下で高周波マグネトロンスパツ
タ装置にて、ポリエステルフイルム上に透明導電膜を成
膜した。Comparative Example 2 Using an oxide target of 90% by weight of indium oxide (In2O3) and 10% by weight of tin oxide (SnO2), it was sputtered onto a polyester film using a high frequency magnetron sputtering device under an argon gas atmosphere. A transparent conductive film was formed.
【００２７】上記の実施例１〜２および比較例１〜２の
各透明導電膜をＥＳＣＡ分析したところ、実施例１〜２
の各透明導電膜中にはターゲツトに含まれる元素成分の
他に多量の窒素元素の存在が認められた。しかし、比較
例１〜２の各透明導電膜には、このような窒素元素の存
在は認められなかつた。ESCA analysis of each of the transparent conductive films of Examples 1 to 2 and Comparative Examples 1 to 2 above revealed that Examples 1 to 2
In addition to the elemental components contained in the target, the presence of a large amount of nitrogen element was observed in each transparent conductive film. However, the presence of such a nitrogen element was not observed in each of the transparent conductive films of Comparative Examples 1 and 2.
【００２８】つぎに、上記の実施例１〜２および比較例
１〜２の各透明導電膜につき、その諸特性を以下の方法
で調べた。その結果を表１に示す。Next, various properties of the transparent conductive films of Examples 1 and 2 and Comparative Examples 1 and 2 described above were investigated using the following methods. The results are shown in Table 1.
【００２９】＜シート抵抗，抵抗率＞フアン・デア・パ
ウ法にてシート抵抗を測定した。また、このシート抵抗
と膜厚との積より抵抗率を求めた。<Sheet resistance, resistivity> Sheet resistance was measured by the van der Pauw method. Further, the resistivity was determined from the product of this sheet resistance and the film thickness.
【００３０】＜光透過率＞自記分光光度計（島津製作所
製のＵＶ−２４０型）を用いて、５５０ｎｍにおける光
透過率を測定した。<Light transmittance> The light transmittance at 550 nm was measured using a self-recording spectrophotometer (UV-240 type manufactured by Shimadzu Corporation).
【００３１】＜耐環境性＞６０℃，９５％ＲＨの雰囲気
下に５００時間放置したのちのシート抵抗（Ｒ）を測定
し、初期のシート抵抗（Ｒｏ）との比（Ｒ／Ｒｏ）を算
出して、耐環境性の指標とした。数値が１．０に近いの
が望ましい。<Environmental resistance> After being left in an atmosphere of 60°C and 95% RH for 500 hours, the sheet resistance (R) was measured and the ratio (R/Ro) to the initial sheet resistance (Ro) was calculated. This was used as an index of environmental resistance. It is desirable that the value be close to 1.0.
【００３２】[0032]
【表１】[Table 1]
【００３３】実施例３
インジウムとスズとの合金ターゲツトに代えて、インジ
ウム単独のターゲツトを用いた以外は、実施例１と全く
同様の反応性ＤＣマグネトロンスパツタ装置を用いて、
ポリエステルフイルム上に膜厚が２５０Åの透明導電膜
を成膜した。Example 3 Using the same reactive DC magnetron sputtering apparatus as in Example 1, except that a target made of indium alone was used instead of the alloy target of indium and tin,
A transparent conductive film having a thickness of 250 Å was formed on a polyester film.
【００３４】この透明導電膜をＥＳＣＡ分析したところ
、膜中にインジウムのほかに多量の窒素元素の存在が認
められた。また、この膜のシート抵抗は１０００Ω／□
、透過率は８０％、耐環境性は１．８であり、実施例１
の酸化インジウム・スズ膜に比べて性能的に劣るものの
、窒素のドーピングにより高い抵抗値が得られた。When this transparent conductive film was analyzed by ESCA, it was found that in addition to indium, a large amount of nitrogen element was present in the film. Also, the sheet resistance of this film is 1000Ω/□
, the transmittance was 80%, the environmental resistance was 1.8, and Example 1
Although the performance was inferior to that of the indium tin oxide film, a high resistance value was obtained by doping with nitrogen.
【００３５】実施例４
実施例２の透明導電膜を厚さが１００μｍのポリエステ
ルフイルム上に形成して透明導電フイルムとし、このフ
イルムを用いて１０ｃｍ×１０ｃｍのアナログ式タツチ
パネルを作製した。Example 4 The transparent conductive film of Example 2 was formed on a polyester film having a thickness of 100 μm to obtain a transparent conductive film, and a 10 cm×10 cm analog touch panel was manufactured using this film.
【００３６】比較例３
比較例２の透明導電膜を厚さが１００μｍのポリエステ
ルフイルム上に形成して透明導電フイルムとし、このフ
イルムを用いて１０ｃｍ×１０ｃｍのアナログ式タツチ
パネルを作製した。Comparative Example 3 The transparent conductive film of Comparative Example 2 was formed on a polyester film having a thickness of 100 μm to obtain a transparent conductive film, and a 10 cm×10 cm analog touch panel was manufactured using this film.
【００３７】上記の実施例４および比較例３の各アナロ
グ式タツチパネルにつき、その性能（直線性）を表２に
示す。耐環境性試験は６０℃，９５％ＲＨの雰囲気下で
５００時間放置した。直線性の算出方法は以下に示すが
、数値は検出位置のずれを示しており、小さいことが望
ましい。Table 2 shows the performance (linearity) of each of the analog touch panels of Example 4 and Comparative Example 3 above. The environmental resistance test was carried out in an atmosphere of 60° C. and 95% RH for 500 hours. The method for calculating linearity is shown below, but the numerical value indicates the deviation of the detection position, and it is desirable that it be small.
【００３８】＜直線性の算出方法＞図１に示す回路によ
り、２ｍｍ間隔にて線分ＡＢおよびＣＤに沿つて各点Ｐ
の電位を測定し、その測定値から各点Ｐでの入力位置と
検出位置のずれの割合（Ｅ）を求めた。なお、各点Ｐで
のずれの割合（Ｅ）は、測定値と理論値（図２の回帰直
線に相当）の差をΔＶｉとしたときに、次式により算出
される。ただし、Ｖａ，Ｖｂは回帰直線の始点と終点に
おける測定値である。
直線性Ｅ；Ｅ＝ΔＶ／（Ｖａ−Ｖｂ）×１００<Method for calculating linearity> Using the circuit shown in FIG. 1, each point P is
The potential was measured, and the ratio of deviation (E) between the input position and the detection position at each point P was determined from the measured value. Note that the deviation ratio (E) at each point P is calculated by the following equation, where the difference between the measured value and the theoretical value (corresponding to the regression line in FIG. 2) is ΔVi. However, Va and Vb are measured values at the starting point and ending point of the regression line. Linearity E; E=ΔV/(Va-Vb)×100
【００３
９】003
9]
【表２】[Table 2]
【００４０】以上の試験結果から明らかなように、本発
明の透明導電膜（実施例１〜３）は、高抵抗でかつ透明
性および耐環境性にすぐれているが、比較例１〜２の透
明導電膜では上記特性のいずれかに著しく劣つている。
また、本発明のアナログ式タツチパネル（実施例４）は
、比較例３のものに比べ、耐環境性試験による特性変化
が小さく、よりすぐれていることも明らかである。As is clear from the above test results, the transparent conductive films of the present invention (Examples 1 to 3) have high resistance and excellent transparency and environmental resistance. Transparent conductive films are significantly inferior in any of the above characteristics. It is also clear that the analog touch panel of the present invention (Example 4) shows less change in characteristics due to the environmental resistance test than that of Comparative Example 3, and is superior to that of Comparative Example 3.
【図１】本発明の実施例４および比較例３の各アナログ
式タツチパネルにつき、その性能（直線性）を調べるた
めの試験方法を示す説明図である。FIG. 1 is an explanatory diagram showing a test method for examining the performance (linearity) of each analog touch panel of Example 4 of the present invention and Comparative Example 3.
【図２】上記の図１に示す試験方法において、各線分Ａ
Ｂ，ＣＤ方向の測定例を示す説明図である。[Figure 2] In the test method shown in Figure 1 above, each line segment A
B, is an explanatory diagram showing an example of measurement in the CD direction.
Claims (4)
・スズに窒素がドーピングされていることを特徴とする
透明導電膜。1. A transparent conductive film characterized in that indium oxide or indium tin oxide is doped with nitrogen.
・スズからなる透明導電膜を気相法で成膜するにあたり
、成膜雰囲気中にイオン化または励起された窒素ガスを
含ませるようにしたことを特徴とする透明導電膜の製造
法。[Claim 2] In forming a transparent conductive film made of indium oxide or indium tin oxide by a vapor phase method, ionized or excited nitrogen gas is included in the film forming atmosphere. Method for manufacturing transparent conductive film.
縁基板の少なくとも一方の面に設けられていることを特
徴とする透明導電フイルム。3. A transparent conductive film, characterized in that the transparent conductive film according to claim 1 is provided on at least one surface of a transparent insulating substrate.
電極として用いたことを特徴とするアナログ式タツチパ
ネル。4. An analog touch panel characterized in that the transparent conductive film according to claim 3 is used as an electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3156276A JPH04308612A (en) | 1991-04-04 | 1991-04-04 | Transparent conductive membrane and manufacture thereof, transparent conductive film, and analog touch-panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3156276A JPH04308612A (en) | 1991-04-04 | 1991-04-04 | Transparent conductive membrane and manufacture thereof, transparent conductive film, and analog touch-panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04308612A true JPH04308612A (en) | 1992-10-30 |
Family
ID=15624278
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3156276A Pending JPH04308612A (en) | 1991-04-04 | 1991-04-04 | Transparent conductive membrane and manufacture thereof, transparent conductive film, and analog touch-panel |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04308612A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6329044B1 (en) | 1998-06-25 | 2001-12-11 | Asahi Glass Company Ltd. | Transparent conductive film and method of making the film |
| US6641937B1 (en) * | 1999-11-11 | 2003-11-04 | Agency Of Industrial Science And Technology | Transparent conductive film and process for producing the film |
| WO2007086230A1 (en) * | 2006-01-30 | 2007-08-02 | Nitto Denko Corporation | Crystalline transparent conductive thin film, method for manufacturing such crystalline transparent conductive thin film, transparent conductive film and touch panel |
| JP2012220740A (en) * | 2011-04-08 | 2012-11-12 | National Institute Of Advanced Industrial & Technology | All solid-state reflective dimming electrochromic element given wavelength selectivity and dimming member using the same |
| JP2014007100A (en) * | 2012-06-26 | 2014-01-16 | Geomatec Co Ltd | Transparent conductive film and method for producing the same |
-
1991
- 1991-04-04 JP JP3156276A patent/JPH04308612A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6329044B1 (en) | 1998-06-25 | 2001-12-11 | Asahi Glass Company Ltd. | Transparent conductive film and method of making the film |
| US6641937B1 (en) * | 1999-11-11 | 2003-11-04 | Agency Of Industrial Science And Technology | Transparent conductive film and process for producing the film |
| WO2007086230A1 (en) * | 2006-01-30 | 2007-08-02 | Nitto Denko Corporation | Crystalline transparent conductive thin film, method for manufacturing such crystalline transparent conductive thin film, transparent conductive film and touch panel |
| JP2007200823A (en) * | 2006-01-30 | 2007-08-09 | Nitto Denko Corp | Crystalline transparent conductive thin film, manufacturing method therefor, transparent conductive film, and touch panel |
| KR101007170B1 (en) * | 2006-01-30 | 2011-01-12 | 닛토덴코 가부시키가이샤 | Crystalline transparent conductive thin film, method of producing the same, transparent conductive film, and touch panel |
| KR101007169B1 (en) * | 2006-01-30 | 2011-01-12 | 닛토덴코 가부시키가이샤 | Crystalline transparent conductive thin film, method of producing the same, transparent conductive film, and touch panel |
| US9260777B2 (en) | 2006-01-30 | 2016-02-16 | Nitto Denko Corporation | Transparent crystalline electrically-conductive thin film, method of production thereof, transparent electrically-conductive film, and touch panel |
| JP2012220740A (en) * | 2011-04-08 | 2012-11-12 | National Institute Of Advanced Industrial & Technology | All solid-state reflective dimming electrochromic element given wavelength selectivity and dimming member using the same |
| JP2014007100A (en) * | 2012-06-26 | 2014-01-16 | Geomatec Co Ltd | Transparent conductive film and method for producing the same |
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