KR940002606A - Method for manufacturing sensing film of thin film gas sensor - Google Patents

Method for manufacturing sensing film of thin film gas sensor Download PDF

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Publication number
KR940002606A
KR940002606A KR1019920013734A KR920013734A KR940002606A KR 940002606 A KR940002606 A KR 940002606A KR 1019920013734 A KR1019920013734 A KR 1019920013734A KR 920013734 A KR920013734 A KR 920013734A KR 940002606 A KR940002606 A KR 940002606A
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KR
South Korea
Prior art keywords
film
sensing film
thin film
substrate
gas sensor
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Application number
KR1019920013734A
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Korean (ko)
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KR950009013B1 (en
Inventor
신현우
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이헌조
주식회사 금성사
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Priority to KR1019920013734A priority Critical patent/KR950009013B1/en
Publication of KR940002606A publication Critical patent/KR940002606A/en
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Publication of KR950009013B1 publication Critical patent/KR950009013B1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

본 발명은 박막센서의 감지막 제조방법에 관한 것으로서, 특히 스퍼터링방법을 이용항 챔버내의 히터로서 기판의 온도를 상승시켜서 감지막을 성장시킬 수 있게 함으로 별도의 열처리 없이도 감도가 양호하고 동작온도가 안정된 신뢰도가 높은 박막센서를 제조하고자 한것에 목적을 둔것이다.The present invention relates to a method for manufacturing a sensing film of a thin film sensor, and in particular, by using a sputtering method to increase the temperature of a substrate as a heater in a chamber, the sensing film can be grown, so that the sensitivity is good and the operating temperature is stable without a separate heat treatment. The purpose is to manufacture high-quality thin film sensors.

상기와 같은 목적을 가진 본 발명은 기판위에 증착한 감지막에 타게트로서 Sn02또는 Pt, Pd, Au를 스퍼터링시킬 수 있게 한 것을 특징으로 한다.The present invention having the above object is characterized in that it is possible to sputter Sn0 2 or Pt, Pd, Au as a target on the sensing film deposited on the substrate.

Description

박막 가스센서의 감지막 제조방법Method for manufacturing sensing film of thin film gas sensor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 일반적인 산화주석 반도체 가스센서 구조도.1 is a structure of a typical tin oxide semiconductor gas sensor.

제2도는 본 발명의 박막 가스센서의 감지막 제조공정도.2 is a manufacturing process of the sensing film of the thin film gas sensor of the present invention.

제3도는 본 발명의 히터로서 열처리하는 스프터링장치의 구성도.3 is a block diagram of a sputtering apparatus for heat treatment as a heater of the present invention.

제4도는 본 발명의 열처리온도에 따른 감도특성도.4 is a sensitivity characteristic according to the heat treatment temperature of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 기판 2 : SiO2 1 substrate 2 SiO 2

3 : NiFe히터 4 : 절연막3: NiFe heater 4: insulating film

5 : Au 전극 6 : SnO2감지막5 Au electrode 6 SnO 2 detection film

Claims (2)

기판(1) 위에 SiO2층(2)과 NiFe히터(3)와 절연막(4) 및 Au전극(5)을 증착한 다음, 상기 기판(1)을 스퍼터링장치 내의 히터(H)에 취부한 다음, 순수한 SnO2또는 SnO2에 Pt, Au, Pd가 한 종류 이상 포함된 타게트를 이용하여 고주파 마그네트론 스퍼터링하여서 감지막을 형성하여 제조함을 특징으로 하는 박막 가스센서의 감지막 제조방법.After depositing a SiO 2 layer (2), a NiFe heater (3), an insulating film (4), and an Au electrode (5) on the substrate (1), the substrate (1) was mounted on a heater (H) in a sputtering apparatus. And manufacturing a sensing film by forming a sensing film by sputtering high frequency magnetron using a target containing at least one of Pt, Au, and Pd in pure SnO 2 or SnO 2 . 제1항에 있어서, 시터의 온도를 증가시켜 시터에 취부된 기판의 온도를 250℃∼750℃까지 변화시키고 스퍼터링 9w/㎝로 하며 혼합가스는 Ar 25Sccm, O25Sccm, 압력은 10mtorr로 하여서 감지막을 형성하여 제조함을 특징으로 하는 박막 가스센서의 감지막 제조방법.According to claim 1, the temperature of the sheet is increased by changing the temperature of the substrate mounted on the sheet from 250 ℃ to 750 ℃, sputtering 9w / cm and the mixed gas is Ar 25 Sccm, O 2 5 Sccm, pressure is sensed by 10 mtorr Method for manufacturing a sensing film of a thin film gas sensor, characterized in that the film is formed by forming. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920013734A 1992-07-31 1992-07-31 Sensing layer manufacturing method of gas sensor KR950009013B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920013734A KR950009013B1 (en) 1992-07-31 1992-07-31 Sensing layer manufacturing method of gas sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920013734A KR950009013B1 (en) 1992-07-31 1992-07-31 Sensing layer manufacturing method of gas sensor

Publications (2)

Publication Number Publication Date
KR940002606A true KR940002606A (en) 1994-02-17
KR950009013B1 KR950009013B1 (en) 1995-08-10

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920013734A KR950009013B1 (en) 1992-07-31 1992-07-31 Sensing layer manufacturing method of gas sensor

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KR (1) KR950009013B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210123596A (en) * 2020-04-03 2021-10-14 한국전자기술연구원 A flexible gas sensor and its manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210123596A (en) * 2020-04-03 2021-10-14 한국전자기술연구원 A flexible gas sensor and its manufacturing method

Also Published As

Publication number Publication date
KR950009013B1 (en) 1995-08-10

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