KR940018495A - 흡출관을 구비한 직접 접촉식 저온 결정화 장치 - Google Patents

흡출관을 구비한 직접 접촉식 저온 결정화 장치 Download PDF

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KR940018495A
KR940018495A KR1019940001551A KR19940001551A KR940018495A KR 940018495 A KR940018495 A KR 940018495A KR 1019940001551 A KR1019940001551 A KR 1019940001551A KR 19940001551 A KR19940001551 A KR 19940001551A KR 940018495 A KR940018495 A KR 940018495A
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low temperature
direct contact
draft tube
temperature fluid
crystallization
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KR1019940001551A
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KR100192904B1 (ko
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탯-얀 쳉 앨런
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조안 엠. 젤사
프랙스에어 테크놀로지, 인코포레이티드
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/26—Nozzle-type reactors, i.e. the distribution of the initial reactants within the reactor is effected by their introduction or injection through nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D9/00—Crystallisation
    • B01D9/0004—Crystallisation cooling by heat exchange
    • B01D9/0009—Crystallisation cooling by heat exchange by direct heat exchange with added cooling fluid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D9/00—Crystallisation
    • B01D9/0036—Crystallisation on to a bed of product crystals; Seeding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
    • B01J8/20—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles with liquid as a fluidising medium
    • B01J8/22—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles with liquid as a fluidising medium gas being introduced into the liquid
    • B01J8/224—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles with liquid as a fluidising medium gas being introduced into the liquid the particles being subject to a circulatory movement
    • B01J8/226—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles with liquid as a fluidising medium gas being introduced into the liquid the particles being subject to a circulatory movement internally, i.e. the particles rotate within the vessel
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1096—Apparatus for crystallization from liquid or supercritical state including pressurized crystallization means [e.g., hydrothermal]

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Separation By Low-Temperature Treatments (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

본 발명은 저온의 유체가 온난한 기체와 함께 고속으로 분사되어 들어가고, 결정체를 제조하기 위한 차후의 냉각 및 교반단계에서 결정체 슬러리를 수직 배향된 흡출관이 구비된 직접 접촉식 저온 결정화 장치에 관한 것이다.

Description

흡출관을 구비한 직접 접촉식 저온 결정화 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명의 일례를 단순화시켜 도시한 것이고, 제 2 도는 본 발명의 일례의 횡단면을 구체적으로 도시한 것이고, 제 3 도는 본 발명의 실시에 유용한 분사노즐의 일례를 횡단면도로 도시한 것이며

Claims (16)

  1. (A)결정화 용기; (B)상기 결정화 용기내에 위치하고 있고 자체의 아래 단부가 상기 결정화 용기의 바닥면으로부터 공간적으로 떨어져 있도록 설치되어 있는 흡출관; (C)상기 흡출관내에 유체를 분사할 수 있도록 위치하는 분사노즐; (D)상기 분사노즐을 통해 저온 유체를 제공하는 장치; 및 (E)상기 분사노즐을 통해 온난한 기체를 제공하는 장치로 이루어진 직접 접촉식 저온 결정화 장치.
  2. 제 1 항에 있어서, 분사노즐을 통해 저온 유체를 제공하는 장치가 분사노즐을 통과하는 중앙 도관이고, 분사노즐을 통해 온난한 기체를 제공하는 장치가 상기 중앙 도관주변에 배향된 다수개의 도관인 것을 특징으로 하는 직접 접촉식 저온 결정화 장치.
  3. 제 2 항에 있어서, 상기 중앙 도관의 직경이 자체 길이의 일부 영역에 걸쳐서 작아져 있는 것을 특징으로 하는 직접 접촉식 저온 결정화 장치.
  4. 제 1 항에 있어서, 상기 흡출관의 상부 단부위에 배플이 설치되어 있는 것을 특징으로 하는 직접 접촉식 저온 결정화 장치.
  5. 제 4 항에 있어서, 상기 배플에 1개 이상의 관통공들이 형성되어 있는 것을 특징으로 하는 직접 접촉식 저온 결정화 장치.
  6. 제 1 항에 있어서, 흡출관의 높이를 조절할 수 있게 되어 있는 것을 특징으로 하는 직접 접촉식 저온 결정화 장치.
  7. 제 1 항에 있어서, 분사노즐이 플루오로카본으로 이루어진 것을 특징으로 하는 직접 접촉식 저온 결정화 장치.
  8. (A)결정화 용기내에서 흡출관의 하부 단부가 결정화 용기의 바닥면으로부터 공간적으로 떨어져 있도록 흡출관이 설치되어 있는 결정화 용기내에 결정체 슬러리를 제공하는 단계; (B)분사노즐을 통해 저온의 유체를 결정화 용기내로 분사시켜서 흡출관내에서 저온 유체를 결정체 슬러리와 접촉시켜 결정체를 제조하는 단계: (C)슬러리 용매의 빙결점보다 높은 온도의 온난한 기체를 저온 유체가 결정화 용기내로 분사되는 시간의 일부 이상동안 분사노즐을 통해 결정화 용기내로 분사시키는 단계; 그리고 (D)결정화 용기로부터 결정체를 회수하는 단계로 이루어지는 결정체 제조방법.
  9. 제 8 항에 있어서, 저온의 유체가 액체인 것을 특징으로 하는 방법.
  10. 제 8 항에 있어서, 저온의 유체가 기체인 것을 특징으로 하는 방법.
  11. 제 8 항에 있어서, 저온의 유체가 질소인 것을 특징으로 하는 방법.
  12. 제 8 항에 있어서, 온난한 기체가 질소인 것을 특징으로 하는 방법
  13. 제 8 항에 있어서, 저온 유체가 헬륨, 아르곤, 산소, 수소, 이산화탄소, 메탄 또는 액화 천연가스로부터 선택되는 1종 이상의 유체인 것을 특징으로 하는 것을 특징으로 하는 방법.
  14. 제 8 항에 있어서, 저온의 유체가 노즐을 통해 음속으로 분사되는 기체인 것을 특징으로 하는 것을 특징으로 하는 방법.
  15. 제 8 항에 있어서, 저온의 유체가 노즐을 통해 음속 이하의 속도로 분사되는 액체인 것을 특징으로 하는 방법.
  16. 제 8 항에 있어서, 저온의 유체가 흡츨관내에서 일부 이상이 증발되는 액체인 것을 특징으로 하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940001551A 1993-01-29 1994-01-28 흡출관을 구비한 직접 접촉식 저온 결정화 장치 KR100192904B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US8/011,064 1993-01-29
US08/011,064 US5362455A (en) 1990-05-03 1993-01-29 Draft tube, direct contact cryogenic crystallizer
US08/011,064 1993-01-29

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KR940018495A true KR940018495A (ko) 1994-08-18
KR100192904B1 KR100192904B1 (ko) 1999-06-15

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US (2) US5362455A (ko)
EP (1) EP0611589B1 (ko)
JP (1) JPH06226004A (ko)
KR (1) KR100192904B1 (ko)
BR (1) BR9400385A (ko)
CA (1) CA2114446C (ko)
DE (1) DE69404692T2 (ko)
ES (1) ES2105364T3 (ko)

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Also Published As

Publication number Publication date
CA2114446C (en) 1999-07-27
US5362455A (en) 1994-11-08
DE69404692T2 (de) 1998-02-12
BR9400385A (pt) 1994-08-16
CA2114446A1 (en) 1994-07-30
US5394827A (en) 1995-03-07
EP0611589A1 (en) 1994-08-24
KR100192904B1 (ko) 1999-06-15
DE69404692D1 (de) 1997-09-11
JPH06226004A (ja) 1994-08-16
ES2105364T3 (es) 1997-10-16
EP0611589B1 (en) 1997-08-06

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