KR940016651A - 중첩오차 측정마크 제조방법 - Google Patents

중첩오차 측정마크 제조방법 Download PDF

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Publication number
KR940016651A
KR940016651A KR1019920026713A KR920026713A KR940016651A KR 940016651 A KR940016651 A KR 940016651A KR 1019920026713 A KR1019920026713 A KR 1019920026713A KR 920026713 A KR920026713 A KR 920026713A KR 940016651 A KR940016651 A KR 940016651A
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KR
South Korea
Prior art keywords
pattern
measurement mark
error measurement
manufacturing
degrees
Prior art date
Application number
KR1019920026713A
Other languages
English (en)
Other versions
KR960004644B1 (ko
Inventor
김영식
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019920026713A priority Critical patent/KR960004644B1/ko
Publication of KR940016651A publication Critical patent/KR940016651A/ko
Application granted granted Critical
Publication of KR960004644B1 publication Critical patent/KR960004644B1/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/708—Mark formation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

본 발명은 반도체 소자의 패턴 형성공정시 중첩오차 측정마크를 제조하는 방법에 있어서, 종래의 4각형 구조의 내곽패턴과 외곽패턴의 모서리부에 45 내지 135도 각도의 사변형 패턴을 형성하여 수평형과 수직형패턴의 중첩오차를 측정할뿐만 아니라 45 내지 135각도의 중첩오차를 측정하여 오차보정할 수 있도록 하는 기술이다.

Description

중첩오차 측정마크 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 3 도는 본 발명에 의해 중첩오차 측정마크를 도시한 평면도.

Claims (2)

  1. 중첩오차 측정마크 제조방법에 있어서, 4각형의 외곽패턴과 내곽패턴의 모서리에 45도 내지 135도 각도의 사변형 패턴을 형성하는 것을 특징으로 하는 중첩오차 측정마크 제조방법.
  2. 제 1 항에 있어서, 상기 사변형 패턴의 구조를 요부구조 또는 철부구조로 형성되는 것을 특징으로 하는 중첩오차 측정마크 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920026713A 1992-12-30 1992-12-30 중첩오차 측정마크 제조방법 KR960004644B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920026713A KR960004644B1 (ko) 1992-12-30 1992-12-30 중첩오차 측정마크 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920026713A KR960004644B1 (ko) 1992-12-30 1992-12-30 중첩오차 측정마크 제조방법

Publications (2)

Publication Number Publication Date
KR940016651A true KR940016651A (ko) 1994-07-23
KR960004644B1 KR960004644B1 (ko) 1996-04-11

Family

ID=19347848

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920026713A KR960004644B1 (ko) 1992-12-30 1992-12-30 중첩오차 측정마크 제조방법

Country Status (1)

Country Link
KR (1) KR960004644B1 (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100353818B1 (ko) * 1995-11-24 2002-12-16 주식회사 하이닉스반도체 콘택홀형성을위한하프톤위상반전마스크
KR100358565B1 (ko) * 1995-03-15 2003-01-24 주식회사 하이닉스반도체 중첩마크가구비된반도체장치

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100358565B1 (ko) * 1995-03-15 2003-01-24 주식회사 하이닉스반도체 중첩마크가구비된반도체장치
KR100353818B1 (ko) * 1995-11-24 2002-12-16 주식회사 하이닉스반도체 콘택홀형성을위한하프톤위상반전마스크

Also Published As

Publication number Publication date
KR960004644B1 (ko) 1996-04-11

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