IT8023526A0 - Procedimento per l'assorbimento di contaminanti, difetti o simili in un corpo semiconduttore. - Google Patents
Procedimento per l'assorbimento di contaminanti, difetti o simili in un corpo semiconduttore.Info
- Publication number
- IT8023526A0 IT8023526A0 IT8023526A IT2352680A IT8023526A0 IT 8023526 A0 IT8023526 A0 IT 8023526A0 IT 8023526 A IT8023526 A IT 8023526A IT 2352680 A IT2352680 A IT 2352680A IT 8023526 A0 IT8023526 A0 IT 8023526A0
- Authority
- IT
- Italy
- Prior art keywords
- contaminants
- defects
- absorption
- procedure
- semiconductor body
- Prior art date
Links
- 238000010521 absorption reaction Methods 0.000 title 1
- 239000000356 contaminant Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/09—Laser anneal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/093—Laser beam treatment in general
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/093,485 US4257827A (en) | 1979-11-13 | 1979-11-13 | High efficiency gettering in silicon through localized superheated melt formation |
Publications (3)
Publication Number | Publication Date |
---|---|
IT8023526A0 true IT8023526A0 (it) | 1980-07-18 |
IT8023526A1 IT8023526A1 (it) | 1982-01-18 |
IT1150028B IT1150028B (it) | 1986-12-10 |
Family
ID=22239219
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT23526/80A IT1150028B (it) | 1979-11-13 | 1980-07-18 | Procedimento per l'assorbimento di contaminanti,difetti o simili in un corpo semiconduttore |
Country Status (5)
Country | Link |
---|---|
US (1) | US4257827A (it) |
EP (1) | EP0028737A3 (it) |
JP (1) | JPS5840334B2 (it) |
CA (1) | CA1140683A (it) |
IT (1) | IT1150028B (it) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4325182A (en) * | 1980-08-25 | 1982-04-20 | General Electric Company | Fast isolation diffusion |
US4390392A (en) * | 1980-09-16 | 1983-06-28 | Texas Instruments Incorporated | Method for removal of minute physical damage to silicon wafers by employing laser annealing |
DE3132983A1 (de) * | 1981-08-20 | 1983-03-03 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum verbinden eines halbleiterchips mit einem chiptraeger |
US4415373A (en) * | 1981-11-17 | 1983-11-15 | Allied Corporation | Laser process for gettering defects in semiconductor devices |
US4401505A (en) * | 1982-03-31 | 1983-08-30 | The United States Of America As Represented By The Administrator National Aeronautics And Space Administration | Method of increasing minority carrier lifetime in silicon web or the like |
DE3246480A1 (de) * | 1982-12-15 | 1984-06-20 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur herstellung von halbleiterscheiben mit getternder scheibenrueckseite |
JPS59124136A (ja) * | 1982-12-28 | 1984-07-18 | Toshiba Corp | 半導体ウエハの処理方法 |
JPS59171036U (ja) * | 1983-04-28 | 1984-11-15 | 三菱重工業株式会社 | シリンダ−駆動方式切換装置 |
DE3324551A1 (de) * | 1983-07-07 | 1985-01-17 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur kennzeichnung von halbleiteroberflaechen durch laserstrahlung |
US4534804A (en) * | 1984-06-14 | 1985-08-13 | International Business Machines Corporation | Laser process for forming identically positioned alignment marks on the opposite sides of a semiconductor wafer |
US4559086A (en) * | 1984-07-02 | 1985-12-17 | Eastman Kodak Company | Backside gettering of silicon wafers utilizing selectively annealed single crystal silicon portions disposed between and extending into polysilicon portions |
JPH03116820A (ja) * | 1989-09-29 | 1991-05-17 | Shin Etsu Handotai Co Ltd | ミスフィット転位制御方法 |
US5066359A (en) * | 1990-09-04 | 1991-11-19 | Motorola, Inc. | Method for producing semiconductor devices having bulk defects therein |
US5977706A (en) * | 1996-12-12 | 1999-11-02 | Candescent Technologies Corporation | Multi-compartment getter-containing flat-panel device |
US6139390A (en) * | 1996-12-12 | 2000-10-31 | Candescent Technologies Corporation | Local energy activation of getter typically in environment below room pressure |
US8138066B2 (en) * | 2008-10-01 | 2012-03-20 | International Business Machines Corporation | Dislocation engineering using a scanned laser |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3585088A (en) * | 1968-10-18 | 1971-06-15 | Ibm | Methods of producing single crystals on supporting substrates |
US4151008A (en) * | 1974-11-15 | 1979-04-24 | Spire Corporation | Method involving pulsed light processing of semiconductor devices |
DE2537464A1 (de) * | 1975-08-22 | 1977-03-03 | Wacker Chemitronic | Verfahren zur entfernung spezifischer kristallbaufehler aus halbleiterscheiben |
US4053335A (en) * | 1976-04-02 | 1977-10-11 | International Business Machines Corporation | Method of gettering using backside polycrystalline silicon |
US4069068A (en) * | 1976-07-02 | 1978-01-17 | International Business Machines Corporation | Semiconductor fabrication method for improved device yield by minimizing pipes between common conductivity type regions |
US4131487A (en) * | 1977-10-26 | 1978-12-26 | Western Electric Company, Inc. | Gettering semiconductor wafers with a high energy laser beam |
US4137100A (en) * | 1977-10-26 | 1979-01-30 | Western Electric Company | Forming isolation and device regions due to enhanced diffusion of impurities in semiconductor material by laser |
US4144099A (en) * | 1977-10-31 | 1979-03-13 | International Business Machines Corporation | High performance silicon wafer and fabrication process |
US4147563A (en) * | 1978-08-09 | 1979-04-03 | The United States Of America As Represented By The United States Department Of Energy | Method for forming p-n junctions and solar-cells by laser-beam processing |
US4155779A (en) * | 1978-08-21 | 1979-05-22 | Bell Telephone Laboratories, Incorporated | Control techniques for annealing semiconductors |
US4181538A (en) * | 1978-09-26 | 1980-01-01 | The United States Of America As Represented By The United States Department Of Energy | Method for making defect-free zone by laser-annealing of doped silicon |
-
1979
- 1979-11-13 US US06/093,485 patent/US4257827A/en not_active Expired - Lifetime
-
1980
- 1980-07-18 IT IT23526/80A patent/IT1150028B/it active
- 1980-08-01 JP JP55105180A patent/JPS5840334B2/ja not_active Expired
- 1980-09-16 CA CA000360336A patent/CA1140683A/en not_active Expired
- 1980-10-23 EP EP80106471A patent/EP0028737A3/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
EP0028737A3 (en) | 1983-12-07 |
EP0028737A2 (en) | 1981-05-20 |
IT1150028B (it) | 1986-12-10 |
JPS5671935A (en) | 1981-06-15 |
IT8023526A1 (it) | 1982-01-18 |
JPS5840334B2 (ja) | 1983-09-05 |
CA1140683A (en) | 1983-02-01 |
US4257827A (en) | 1981-03-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IT8023526A0 (it) | Procedimento per l'assorbimento di contaminanti, difetti o simili in un corpo semiconduttore. | |
ES267075Y (es) | "dispositivo valvular frangible". | |
ES266409Y (es) | "un articulo absorvente". | |
BR7902154A (pt) | Aperfeicoamentos em estimulador implantavel no corpo | |
IT1142807B (it) | Perfezionamento nei dispositivi per l'azionamento di valvole | |
IT8224994A0 (it) | Pastiglie d'assorbimento di neutroni aventi microstruttura modificata. | |
IT8024376A0 (it) | Corpo d'avvolgimento di filati (focaccia) nonche' procedimento e dispositivo per il suo allestimento. | |
IT8022962A0 (it) | Snodo per lettini o simili. | |
ES524439A0 (es) | Procedimiento de obtencion de los 2-amino 5- (aralcoil piperidino alcoil) amino 1,4-diazoles | |
IT8120067A0 (it) | Procedimento per l'assorbimento isotermico dell'ossido di etilene mediante l'impiego di assorbitori a film. | |
IT7928403A0 (it) | Dispositivo per trasformare un movimento di rotazione in un movimento di traslazione o l'opposto. | |
ES267504Y (es) | "herraje de inversion para el cinturon de seguridad". | |
IT8220025A0 (it) | Dispositivo per l'azionamento, al giusto ritmo, di valvole per lo scambio di gas. | |
TR22459A (tr) | 1,3,2,dioksaborinan'lar bunlarin ueretilmesine mahsus usulleri ve bunlari ihtiva eden biosid maddeler | |
IT8221530A0 (it) | Dispositivo per formare e trasportare saponette e simili. | |
ES509944A0 (es) | "procedimiento para el reajuste sin contacto de disposiciones de ensayo no destructivas en el caso del ensayo de tubos". | |
BE895535A (fr) | Vanne d'arret | |
IT1080971B (it) | Dispositivo per l'imballaggio di un insieme di oggetti,quali bottiglie o simili | |
ES512001A0 (es) | "aparato para medir el area de piezas de trabajo planas". | |
TR21447A (tr) | 1,2,3-tiyadoazol-5-yluere tuerevleri,bu bilesimlerin imaline mahsus islemler ve bu bilesimleri ihtiva eden ve bueyuemeyi tanzim edici ve yaprak doekuecue etkileri bulunan unsurlar | |
IT8321220A0 (it) | Gruppo d'attacco per la valvola per contenitori di aerosoli e simili. | |
ES510320A0 (es) | "procedimiento de obtencion de n,n,-diacetil cisteina". | |
IT8622694A0 (it) | Dispositivo per l'applicazione manuale di contrassegni, bottoni esimili su tessuti in genere. | |
IT8104839A0 (it) | Procedimento per l'adduzione di telai per diapositive, rispettivamente per mezzitelai, ad un dispositivo per l'applicazione dei telai e sviluppi di telai perl'impiego secondo questo procedimento. | |
IT8023305V0 (it) | Apparecchio per l'arrotolamento ela cucitura di pancette e simili. |