KR940003877A - 유리에칭 조성물과 그를 이용한 유리표면의 에칭 방법 - Google Patents

유리에칭 조성물과 그를 이용한 유리표면의 에칭 방법 Download PDF

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Publication number
KR940003877A
KR940003877A KR1019920014675A KR920014675A KR940003877A KR 940003877 A KR940003877 A KR 940003877A KR 1019920014675 A KR1019920014675 A KR 1019920014675A KR 920014675 A KR920014675 A KR 920014675A KR 940003877 A KR940003877 A KR 940003877A
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South Korea
Prior art keywords
weight
parts
glass
solution
etching
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KR1019920014675A
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English (en)
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KR950002233B1 (ko
Inventor
김순호
김중형
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김순호
김중형
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Application filed by 김순호, 김중형 filed Critical 김순호
Priority to KR1019920014675A priority Critical patent/KR950002233B1/ko
Priority to US07/968,951 priority patent/US5281350A/en
Priority to EP93306407A priority patent/EP0586126A1/en
Priority to CA002104087A priority patent/CA2104087A1/en
Priority to JP5202244A priority patent/JPH085694B2/ja
Publication of KR940003877A publication Critical patent/KR940003877A/ko
Application granted granted Critical
Publication of KR950002233B1 publication Critical patent/KR950002233B1/ko

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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B15/00Drawing glass upwardly from the melt
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31105Etching inorganic layers
    • H01L21/31111Etching inorganic layers by chemical means

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Surface Treatment Of Glass (AREA)
  • Surface Treatment Of Glass Fibres Or Filaments (AREA)
  • Detergent Compositions (AREA)

Abstract

본 발명은, 정제 글리세린 100중량부에 25내지 35중량부의 설탕, 물엿, 조청 또는 꿀을 첨가하여 중탕하고 여기에 25내지 35중량부의 불화수소 암모늄을 첨가한 뒤 이를 실온에서 냉각시켜서 제1용액을 준비하고, 정제 글리세린 100중량부를 중탕한 후 여기에 25내지 35중량부의 불화수소암모늄을 첨가하고 이어서 10 내지 15중량부의 염화 제이철을 첨가하여 불화수소 암모늄을 분쇄시킨 뒤 이를 실온에서 냉각시켜 불화수소 암모늄의 분쇄물을 침적시키고 이 침적물을 제거하여 제2용액을 준비한 다음, 상기 제1용액과 상기 제2용액을 1:1 내지 2:1의 중량비로 혼합하여서된 저독성 및 저공해성의 유리에칭 조성물과; 그러한 유리에칭 조성물을 이용하여 통상적인 방법에 따라 유리표면을 에칭하는 방법을 제공하는 것이다.

Description

유리에칭 조성물과 그를 이용한 유리표면의 에칭 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (3)

  1. (가)정제 글리세린 1000중량부에 25내지 35중량부의 설탕, 물엿, 조청 또는꿀을 첨가하여 중탕히고, 여기에 25내지 35중량부의 불화수소 암모늄을 첨가한 뒤, 이를 실온에서 냉각시켜서 제1용액을 준비하고 (나) 정제 글리세린 100중량부를 중탕한 후, 여기에 25내지 35중량부의 불화수소암모늄을 첨가하고, 이어서 10내지 15중량부의 연화제이철을 첨가하여 불화수소암모늄을 분쇄시킨 뒤, 이를 실온에서 냉각시켜 불화수소 암모늄의 분쇄물을 침적시키고, 이 침적물을 제거하여, 제2용액을 준비한 다음, (다) 상기 제1용액과 상기 제2용액을 1:1 내지 2:1의 중량비로 혼합하여서 된 유리에칭 조성물.
  2. 제1항에 있어서, 상기 1용액과 상기 제2용액의 혼합물에 물을 추가로 첨가함을 특징으로 하는 유리에칭 조성물.
  3. 유리표면을 수세하고, 필요에 따라서는 유리표면의 일부를 내부식성 물질로 보호한 다음, 이렇게 처리된 유리를 에칭 조성물로 처리하여 유리표면을 에칭시키는데 있어서, 상기 에칭용액으로서 제1항의 조성물을 사용하는 것을 특징으로하는 유리표면의 에칭방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920014675A 1992-08-14 1992-08-14 유리에칭 조성물과 그를 이용한 유리표면의 에칭 방법 KR950002233B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1019920014675A KR950002233B1 (ko) 1992-08-14 1992-08-14 유리에칭 조성물과 그를 이용한 유리표면의 에칭 방법
US07/968,951 US5281350A (en) 1992-08-14 1992-10-30 Glass etching composition
EP93306407A EP0586126A1 (en) 1992-08-14 1993-08-13 Glass etching composition and method
CA002104087A CA2104087A1 (en) 1992-08-14 1993-08-13 Glass etching composition and method
JP5202244A JPH085694B2 (ja) 1992-08-14 1993-08-16 ガラスエッチングの組成物及び方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920014675A KR950002233B1 (ko) 1992-08-14 1992-08-14 유리에칭 조성물과 그를 이용한 유리표면의 에칭 방법

Publications (2)

Publication Number Publication Date
KR940003877A true KR940003877A (ko) 1994-03-12
KR950002233B1 KR950002233B1 (ko) 1995-03-15

Family

ID=19338003

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920014675A KR950002233B1 (ko) 1992-08-14 1992-08-14 유리에칭 조성물과 그를 이용한 유리표면의 에칭 방법

Country Status (5)

Country Link
US (1) US5281350A (ko)
EP (1) EP0586126A1 (ko)
JP (1) JPH085694B2 (ko)
KR (1) KR950002233B1 (ko)
CA (1) CA2104087A1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040042243A (ko) * 2002-11-13 2004-05-20 박진국 유리표면의 반투명 처리용 부식액조성물과 이를 이용한저반사처리방법

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KR960010586B1 (ko) * 1993-07-03 1996-08-06 김중형 무반사 유리 에칭 방법 및 그를 위한 조성물
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DE10101926A1 (de) * 2000-04-28 2001-10-31 Merck Patent Gmbh Ätzpasten für anorganische Oberflächen
FR2809722B1 (fr) 2000-05-31 2003-01-03 Seppic Sa Nouveau procede de depolissage chimique du verre comprenant un rincage avec une solution saline et objets depolis obtenus par ce procede
WO2002053508A1 (fr) * 2000-12-27 2002-07-11 Hiroshi Miwa Procede de preparation de verre decoratif au moyen d'une composition de gravure sur verre
DE10104726A1 (de) * 2001-02-02 2002-08-08 Siemens Solar Gmbh Verfahren zur Strukturierung einer auf einem Trägermaterial aufgebrachten Oxidschicht
DE10150040A1 (de) 2001-10-10 2003-04-17 Merck Patent Gmbh Kombinierte Ätz- und Dotiermedien
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US7888168B2 (en) * 2007-11-19 2011-02-15 Applied Materials, Inc. Solar cell contact formation process using a patterned etchant material
TWI390756B (zh) 2008-07-16 2013-03-21 Applied Materials Inc 使用摻質層遮罩之混合異接面太陽能電池製造
WO2010025262A2 (en) * 2008-08-27 2010-03-04 Applied Materials, Inc. Back contact solar cells using printed dielectric barrier
CN104011882A (zh) 2012-01-12 2014-08-27 应用材料公司 制造太阳能电池装置的方法
JP6242902B2 (ja) 2012-09-20 2017-12-06 スイスインソ・ホールディング・インコーポレイテッド 太陽エネルギーシステムに適した着色反射および高日射透過率を有する積層グレージング(laminatedglazing)
US11745473B2 (en) 2012-09-20 2023-09-05 Kromatix SA Laminated glazing with coloured reflection and high solar transmittance, and solar energy systems employing the same
JP6543436B2 (ja) * 2013-09-02 2019-07-10 株式会社堀場製作所 ガラス電極の応答ガラス用洗浄キット及びガラス電極の応答ガラス洗浄方法
KR101717259B1 (ko) * 2016-01-19 2017-03-17 주식회사 가인공영 난반사 유리 제조용 에칭액 조성물 및 그 제조방법
WO2018124666A1 (ko) * 2016-12-29 2018-07-05 코닝 인코포레이티드 글라스 에칭 조성물 및 방현 글라스 제조방법
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Publication number Priority date Publication date Assignee Title
KR20040042243A (ko) * 2002-11-13 2004-05-20 박진국 유리표면의 반투명 처리용 부식액조성물과 이를 이용한저반사처리방법

Also Published As

Publication number Publication date
JPH0717743A (ja) 1995-01-20
CA2104087A1 (en) 1994-02-15
KR950002233B1 (ko) 1995-03-15
US5281350A (en) 1994-01-25
JPH085694B2 (ja) 1996-01-24
EP0586126A1 (en) 1994-03-09

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