KR930024168A - 납 함유 퍼브로스카이트 구조물 및 그 형성 방법 - Google Patents

납 함유 퍼브로스카이트 구조물 및 그 형성 방법 Download PDF

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Publication number
KR930024168A
KR930024168A KR1019930009304A KR930009304A KR930024168A KR 930024168 A KR930024168 A KR 930024168A KR 1019930009304 A KR1019930009304 A KR 1019930009304A KR 930009304 A KR930009304 A KR 930009304A KR 930024168 A KR930024168 A KR 930024168A
Authority
KR
South Korea
Prior art keywords
grain size
layer
lead
perovskite material
average grain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019930009304A
Other languages
English (en)
Korean (ko)
Inventor
알. 섬머펠트 스코트
알. 베라탄 하워드
엠. 쿨위치 버나드
Original Assignee
윌리엄 이. 힐러
텍사스 인스트루먼츠 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 윌리엄 이. 힐러, 텍사스 인스트루먼츠 인코포레이티드 filed Critical 윌리엄 이. 힐러
Publication of KR930024168A publication Critical patent/KR930024168A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
    • H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Capacitors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Memories (AREA)
  • Inorganic Insulating Materials (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
KR1019930009304A 1992-05-29 1993-05-27 납 함유 퍼브로스카이트 구조물 및 그 형성 방법 Ceased KR930024168A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US89150892A 1992-05-29 1992-05-29
US7/891,508 1992-05-29

Publications (1)

Publication Number Publication Date
KR930024168A true KR930024168A (ko) 1993-12-22

Family

ID=25398315

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930009304A Ceased KR930024168A (ko) 1992-05-29 1993-05-27 납 함유 퍼브로스카이트 구조물 및 그 형성 방법

Country Status (5)

Country Link
US (1) US6432473B1 (enExample)
EP (1) EP0571949A1 (enExample)
JP (1) JPH06112432A (enExample)
KR (1) KR930024168A (enExample)
TW (1) TW279992B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0661244A3 (en) * 1993-09-28 1996-09-11 Texas Instruments Inc Manufacture of thin film materials.
JPH1050960A (ja) * 1996-07-26 1998-02-20 Texas Instr Japan Ltd 強誘電体キャパシタ及び強誘電体メモリ装置と、これらの製造方法
TW531803B (en) * 2000-08-31 2003-05-11 Agere Syst Guardian Corp Electronic circuit structure with improved dielectric properties
KR20020079045A (ko) * 2001-04-12 2002-10-19 김상섭 누설전류 억제 구조의 메모리 소자
WO2012177642A2 (en) * 2011-06-20 2012-12-27 Advanced Technology Materials, Inc. High-k perovskite material and methods of making and using the same
KR102778206B1 (ko) * 2021-12-08 2025-03-10 삼성전자주식회사 고유전체 및 그 제조방법, 고유전체 제조에 사용되는 타겟 물질, 고유전체를 포함하는 전자소자 및 이를 포함하는 전자장치

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3859403A (en) * 1970-04-13 1975-01-07 Sprague Electric Co Process for semiconductive ceramic body
JPS56103532A (en) * 1980-01-11 1981-08-18 Tdk Corp Power supply device
JPS60138730A (ja) * 1983-12-27 1985-07-23 Kyocera Corp 磁気デイスク用基板
EP0205137A3 (en) * 1985-06-14 1987-11-04 E.I. Du Pont De Nemours And Company Dielectric compositions
US4767732A (en) * 1986-08-28 1988-08-30 Kabushiki Kaisha Toshiba High dielectric constant ceramic material and method of manufacturing the same
DE3924803A1 (de) * 1988-07-28 1990-02-01 Murata Manufacturing Co Dielektrische keramische zusammensetzung
KR940006708B1 (ko) * 1989-01-26 1994-07-25 세이꼬 엡슨 가부시끼가이샤 반도체 장치의 제조 방법
US5258338A (en) * 1990-01-11 1993-11-02 Mra Laboratories Fine grained BaTiO3 powder mixture and method for making

Also Published As

Publication number Publication date
EP0571949A1 (en) 1993-12-01
US6432473B1 (en) 2002-08-13
JPH06112432A (ja) 1994-04-22
TW279992B (enExample) 1996-07-01

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