KR930018795A - 반도체 레이저 제조방법 - Google Patents
반도체 레이저 제조방법 Download PDFInfo
- Publication number
- KR930018795A KR930018795A KR1019920003001A KR920003001A KR930018795A KR 930018795 A KR930018795 A KR 930018795A KR 1019920003001 A KR1019920003001 A KR 1019920003001A KR 920003001 A KR920003001 A KR 920003001A KR 930018795 A KR930018795 A KR 930018795A
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- KR
- South Korea
- Prior art keywords
- type
- semiconductor laser
- layer
- type electrode
- current injection
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32316—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm comprising only (Al)GaAs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Abstract
본 발명은 반도체 레이저 제조방법에 관한 것으로, 종래에는 P형 전극과 n형 전극을 반도체 레이저의 상, 하부에 형성하여 패키지 공정시 어려운 문제점과 집적도를 저하시키는 문제점이 있었다.
본 발명은 상기와 같은 문제점을 감안하여 n+형 수평전류주입층을 형성하고 그것에 n형 전극을 증착하므로 P형 전극과 더불어 반도체 레이저상부에 형성하여 솔저 선택의 난항을 해결하여 패키지 공정을 간소화하는 한편 집적도를 향상하는 효과가 있다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도의 (가) 내지 (다)는 종래의 반도체 레이저 제조공정도.
제2도의 (가) 내지 (바)는 본 발명의 반도체 레이저 제조공정도.
Claims (1)
- 반절연층기판(10)위에 n형 버퍼층(2)과 n+형 GaAs수평전류주입층(11)을 증착하고, 상기 n+형 GaAs수평전류주입층(11)위에 n형전극 형성위치에 산화막(12)을 증착한 후 n형 AlGaAs층(3), 비로팅활성층(4), P형 AlGaAs캡층(6)을 성장하고 P형 전극(8) 및 산화막(12)을 부분적으로 증착한 후 이온밀링 에칭법으로 상기 소정의 n+형 GaAs수평전류주입층(11)까지 에칭하고 n+형 GaAs수평전류주입층(11)위의 산화막(12)을 제거 후 n형 전극(7)을 증착하고 상기 산화막(12)을 제거하여 제조하는 반도체 레이저 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920003001A KR100239337B1 (ko) | 1992-02-26 | 1992-02-26 | 반도체 레이저 제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920003001A KR100239337B1 (ko) | 1992-02-26 | 1992-02-26 | 반도체 레이저 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR930018795A true KR930018795A (ko) | 1993-09-22 |
| KR100239337B1 KR100239337B1 (ko) | 2000-02-01 |
Family
ID=19329530
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019920003001A KR100239337B1 (ko) | 1992-02-26 | 1992-02-26 | 반도체 레이저 제조방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100239337B1 (ko) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101603435B1 (ko) | 2014-10-13 | 2016-03-14 | 윤임식 | 킥보드 |
-
1992
- 1992-02-26 KR KR1019920003001A patent/KR100239337B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR100239337B1 (ko) | 2000-02-01 |
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Payment date: 20060911 Year of fee payment: 8 |
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