KR930010621A - 확산 패턴화 방법 및 조성물 - Google Patents

확산 패턴화 방법 및 조성물 Download PDF

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Publication number
KR930010621A
KR930010621A KR1019920021363A KR920021363A KR930010621A KR 930010621 A KR930010621 A KR 930010621A KR 1019920021363 A KR1019920021363 A KR 1019920021363A KR 920021363 A KR920021363 A KR 920021363A KR 930010621 A KR930010621 A KR 930010621A
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South Korea
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layer
polymer
plasticizer
acid
unpatterned
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KR1019920021363A
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English (en)
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KR950013580B1 (en
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제임스 펠텐 존
레이몬드 히틀러 월터
마 샤우-화
Original Assignee
미리암 디. 메코너헤이
이.아이.듀우판 드 네모아 앤드 캄파니
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02334—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment in-situ cleaning after layer formation, e.g. removing process residues
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

본 발명은 A기판에 산에 불안정한 고체 중합체의 패턴화되지 않은 층을 도포하는 단계, B. 패턴화되지 않은 층에 유기산 및 휘발성 용매의 액체 용액으로 이루어진 패턴화된 제2층을 도포하는 단계, C. 패턴화된 층을 가열하여 층으로부터 휘발성 용매를 제거하고 유기산 제1층의 하부 영역 내에 확산시키는 단계 및 D. 염기 수용액으로 세척하여 층의 패턴화된 영역으로부터 용해된 산에 불안정한 중합체를 제거하는 연속단계로 이루어진 유기 중합체 층에 패턴을 형성하는 방법에 관한 것이다.

Description

확산 패턴화 방법 및 조성물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 후박 페이스트를 사용하는 본 발명의 패턴화 방법의 각 단계들을 도식적으로 나타낸 도면.

Claims (6)

  1. A. 기판에 산에 불안정한 고체 중합체로 이루어진 패턴화되지 않은 제1층을 도포하는 단계, B. 패턴화되지 않은 제1층에 유기산 및 휘발성 용매의 액체 용액으로 이루어진 패턴화된 제2층을 도포하는 단계, C. 패턴화된 제2층을 가열하여 층으로부터 휘발성 용매를 제거하고 유기산을 제1층의 하부(下部)영역 내에 확산시켜서 제1층의 하부 영역 중의 산에 불안정한 중합체를 유기산과의 반응에 의하여 용해시키는 단계 및 D. 충돌을 7이상의 pH를 갖는 수성 용액으로 세척하여 제1층의 패턴화된 영역으로부터 용해된 산에 불안정한 중합체를 제거하는 연속 단계로 이루어진 유기 중합체 층에 패턴을 형성하는 방법.
  2. 제1항에 있어서, 패턴화되지 않은 제1층이 추가로 가소제를 함유하는 것인 방법.
  3. 제1항에 있어서, 패턴화된 제1층이, 패턴화되지 않은 층이 거울 비반사성으로 되게 하기에 충분비 비상용성인 2종 이상의 중합체의 혼합물로 이루어지는 것인 방법.
  4. 제2항에 있어서, 산에 불안정한 중합체가 가소제 중에서 제한된 용해도를 갖고, 중합체 대 가소제의 중량비율은 패턴화되지 않은 층이 거울 비반사성으로 되게 하는 비율인 방법.
  5. A. 산에 불안정한 막 형성용 고체 중합체, B. 산에 불안정한 중합체가 불완전하게 용해되는 가소제 및 C. 휘발성 유기 용매로 이루어지고, 중합체와 가소제의 비는 휘발성 유기 용매를 유기 매질로부터 제거했을 때 생성되는 용매 없는 중합체/가소제 분산물이 거울 비반사성으로 되게 하는 비율인, 확산 패턴화 방법에서 패턴화 되지 않는 제1층으로 사용하기 위한 조성물.
  6. A. 산에 안정한 막 형성용 고체 중합체, B. 중합체가 불완전하게 용해되는 산에 불안정한 가소제 및 C. 휘발성 유기 용매로 이루어지고, 중합체와 가소제의 비는 유기 용매를 유기 매질로부터 제거했을 때 생성되는 용매 없는 중합체/가소제 분산물이 거울 비반사성으로 되게 되는 비율인, 확산 패턴화 방법에서 패턴화되지 않는 제1층으로 사용하기 위한 조성물.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR92021363A 1991-11-14 1992-11-13 Method and compositions for difusion patierning KR950013580B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US790,863 1991-11-14
US07/790,863 US5275689A (en) 1991-11-14 1991-11-14 Method and compositions for diffusion patterning

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KR930010621A true KR930010621A (ko) 1993-06-22
KR950013580B1 KR950013580B1 (en) 1995-11-09

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US (1) US5275689A (ko)
EP (1) EP0541969B1 (ko)
JP (1) JP3268856B2 (ko)
KR (1) KR950013580B1 (ko)
CN (2) CN1042074C (ko)
DE (1) DE69221076T2 (ko)
MY (1) MY130019A (ko)

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Publication number Publication date
MY130019A (en) 2007-05-31
EP0541969A1 (en) 1993-05-19
JPH05267856A (ja) 1993-10-15
DE69221076D1 (de) 1997-09-04
CN1085889C (zh) 2002-05-29
US5275689A (en) 1994-01-04
CN1075825A (zh) 1993-09-01
EP0541969B1 (en) 1997-07-23
JP3268856B2 (ja) 2002-03-25
KR950013580B1 (en) 1995-11-09
DE69221076T2 (de) 1998-01-02
CN1042074C (zh) 1999-02-10
CN1148188A (zh) 1997-04-23

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