KR930006498A - 감방사선성 조성물 - Google Patents

감방사선성 조성물 Download PDF

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Publication number
KR930006498A
KR930006498A KR1019920016240A KR920016240A KR930006498A KR 930006498 A KR930006498 A KR 930006498A KR 1019920016240 A KR1019920016240 A KR 1019920016240A KR 920016240 A KR920016240 A KR 920016240A KR 930006498 A KR930006498 A KR 930006498A
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KR
South Korea
Prior art keywords
group
radiation
alkyl group
radiation sensitive
germanyl
Prior art date
Application number
KR1019920016240A
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English (en)
Other versions
KR100198177B1 (ko
Inventor
마고또 무라따
미끼오 야마찌가
요시지 유모또
다까오 미우라
Original Assignee
이사꾸라 다쓰오
니혼 고오세이 고무 가부시끼가이샤
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Application filed by 이사꾸라 다쓰오, 니혼 고오세이 고무 가부시끼가이샤 filed Critical 이사꾸라 다쓰오
Publication of KR930006498A publication Critical patent/KR930006498A/ko
Application granted granted Critical
Publication of KR100198177B1 publication Critical patent/KR100198177B1/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/04—Chromates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/12—Nitrogen compound containing
    • Y10S430/121—Nitrogen in heterocyclic ring
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/126—Halogen compound containing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

본 발명의 감방사선성 조성물은 (A)하기 식(1)
(여기에서, R1은 치환 메틸기, 치환 에틸기, 실릴기, 게르밀기 또는 알콕시 카르보닐기를 나타내고, R2는 -OR3또는 -NR4R5를 나타내며, 단, R3은 수소원자, 직쇄 알킬기, 고리상 알킬기, 아릴킬기, 아릴기, 치환 메틸기, 치환 에틸기. 실릴기, 게르밀기 또는 알콕시 카르보닐기를 나타내고, R4및 R5는, 동일하거나 또는 상이한 것으로서, 수소원자, 직쇄 알킬기, 고리상 알킬기, 아랄킬기 또는 아릴기를 나타낸다)로 표시되는 반복 단위를 갖는 중합체 및(B)감방사선성 산 형성제를 함유하는 것을 특징으로 한다.
본 발명의 감방사선성 조성물은 엑시머레이저 등의 원자오선, 신크로트론 방사선 등의 X건, 전자선 등의 하전방사선과 같은 방사선의 어느 것에도 대응할 수 있으므로, 이후 미세화가 진행한다고 예상되는 집적회로 제조용의 레지스트로서 유리하게 사용할 수 있다.

Description

감방사선성 조성물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (1)

  1. (A)하기 식(1)로 표시되는 반복 단위를 갖는 중합체 및 (B)감방사선성 산 형성제를 함유하는 것을 특징으로 하는 감방사선성 조성물.
    식중, R1은 치환 메틸기, 치환 에틸기, 실릴기, 게르밀기 또는 알콕시카르보닐기를 나타내고, R2는 -OR3또는 -NR4R5를 나타내며, 단, R3은 수소원자, 직쇄 알킬기, 고리상 알킬기, 아랄킬기, 아릴기, 치환 메틸기, 치환에틸기, 실릴기, 게르밀기 또는 알콕시 카르보닐기를 나타내고, R4및 R5는, 동일하거나 또는 상이한 것으로서, 수소원자, 직쇄 알킬기, 고리상 알킬기, 아랄킬기 또는 알릴기를 나타낸다.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920016240A 1991-09-06 1992-09-05 감방사선성 조성물 KR100198177B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP25422591 1991-09-06
JP91-254225 1991-09-06

Publications (2)

Publication Number Publication Date
KR930006498A true KR930006498A (ko) 1993-04-21
KR100198177B1 KR100198177B1 (ko) 1999-06-15

Family

ID=17262004

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920016240A KR100198177B1 (ko) 1991-09-06 1992-09-05 감방사선성 조성물

Country Status (3)

Country Link
US (2) US5332650A (ko)
KR (1) KR100198177B1 (ko)
DE (1) DE4229816A1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100854743B1 (ko) * 2002-08-30 2008-08-27 엘지전자 주식회사 밀폐형 압축기의 크랭크축

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5332650A (en) * 1991-09-06 1994-07-26 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive composition
DE4136213A1 (de) * 1991-11-02 1993-05-06 Basf Ag, 6700 Ludwigshafen, De Positiv arbeitendes strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern
US5580695A (en) * 1992-02-25 1996-12-03 Japan Synthetic Rubber Co., Ltd. Chemically amplified resist
KR100341563B1 (ko) * 1992-03-23 2002-10-25 제이에스알 가부시끼가이샤 레지스트도포조성물
FR2693205B1 (fr) * 1992-07-02 1994-09-02 Inst Francais Du Petrole Compositions de revêtement gravables notamment pour rouleaux d'imprimerie, procédé d'enduction et objets fabriqués par ce procédé.
EP0588544A3 (en) * 1992-09-14 1994-09-28 Wako Pure Chem Ind Ltd Fine pattern forming material and pattern formation process
US6010824A (en) * 1992-11-10 2000-01-04 Tokyo Ohka Kogyo Co., Ltd. Photosensitive resin composition containing a triazine compound and a pre-sensitized plate using the same, and photosensitive resin composition containing acridine and triazine compounds and a color filter and a pre-sensitized plate using the same
JPH06214395A (ja) * 1993-01-18 1994-08-05 Sumitomo Chem Co Ltd ポジ型フォトレジスト組成物
KR100233367B1 (ko) * 1993-04-15 1999-12-01 카나가와 치히로 레지스트 재료
KR960015081A (ko) * 1993-07-15 1996-05-22 마쯔모또 에이이찌 화학증폭형 레지스트 조성물
US5514502A (en) * 1993-08-16 1996-05-07 Fuji Photo Film Co., Ltd. Photopolymerizable composition, color filter, and production of color filter
EP0689098B1 (de) * 1994-06-22 2000-08-16 Ciba SC Holding AG Positiv-Photoresist
DE4430680A1 (de) * 1994-08-29 1996-03-07 Hoechst Ag Lichtempfindliches Gemisch
US5558971A (en) * 1994-09-02 1996-09-24 Wako Pure Chemical Industries, Ltd. Resist material
EP0716344A1 (en) * 1994-12-05 1996-06-12 Konica Corporation Light-sensitive composition and light-sensitive lithographic printing plate using the same
US5952150A (en) * 1995-06-08 1999-09-14 Jsr Corporation Radiation sensitive resin composition
GB9520950D0 (en) * 1995-10-13 1995-12-13 Martinex R & D Inc Water-processable chemically amplified resist
JP2845225B2 (ja) * 1995-12-11 1999-01-13 日本電気株式会社 高分子化合物、それを用いた感光性樹脂組成物およびパターン形成方法
US5962180A (en) * 1996-03-01 1999-10-05 Jsr Corporation Radiation sensitive composition
DE69712988T2 (de) * 1996-07-18 2002-11-21 Jsr Corp Strahlungsempfindliche Harzzusammensetzung
US5994023A (en) * 1996-07-19 1999-11-30 Agfa-Gevaert, N.V. Acid-sensitive substance and photosensitive compositions therewith
EP0819986B1 (en) * 1996-07-19 2002-03-27 Agfa-Gevaert Imaging element for making lithographic printing plates
US6074800A (en) * 1998-04-23 2000-06-13 International Business Machines Corporation Photo acid generator compounds, photo resists, and method for improving bias
EP0952166B1 (de) 1998-04-24 2003-06-25 Infineon Technologies AG Filmbildende Polymere
DE59908549D1 (de) * 1998-04-24 2004-03-25 Infineon Technologies Ag Strahlungsempfindliches Gemisch und dessen Verwendung
US6365321B1 (en) * 1999-04-13 2002-04-02 International Business Machines Corporation Blends of hydroxystyrene polymers for use in chemically amplified positive resist formulations
KR100299689B1 (ko) * 1999-08-30 2001-09-13 한의섭 포지티브형 포토레지스트 조성물
KR100455652B1 (ko) 1999-09-06 2004-11-06 삼성전자주식회사 포지티브형 포토레지스트 막의 제조방법
US6346362B1 (en) * 2000-06-15 2002-02-12 International Business Machines Corporation Polymers and use thereof
KR20020082006A (ko) * 2001-04-23 2002-10-30 금호석유화학 주식회사 신규한 산-민감성 중합체 및 이를 함유하는 레지스트 조성물
JP2003107707A (ja) * 2001-09-28 2003-04-09 Clariant (Japan) Kk 化学増幅型ポジ型感放射線性樹脂組成物
JP4222850B2 (ja) 2003-02-10 2009-02-12 Ｓｐａｎｓｉｏｎ Ｊａｐａｎ株式会社 感放射線性樹脂組成物、その製造法並びにそれを用いた半導体装置の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5421089B2 (ko) * 1973-05-29 1979-07-27
US4539286A (en) * 1983-06-06 1985-09-03 Dynachem Corporation Flexible, fast processing, photopolymerizable composition
EP0164083B1 (de) * 1984-06-07 1991-05-02 Hoechst Aktiengesellschaft Positiv arbeitende strahlungsempfindliche Beschichtungslösung
DE3637717A1 (de) * 1986-11-05 1988-05-11 Hoechst Ag Lichtempfindliches gemisch, dieses enthaltendes aufzeichnungsmaterial und verfahren zur herstellung von positiven oder negativen reliefkopien unter verwendung dieses materials
DE3737734A1 (de) * 1987-11-06 1989-05-18 Hoechst Ag Strahlungsempfindliches gemisch
US5169741A (en) * 1988-10-11 1992-12-08 Matsushita Electric Industrial Co., Ltd. Method for forming high sensitivity positive patterns employing a material containing a photosensitive compound having a diazo group, an alkaline-soluble polymer, a compound capable of adjusting the pH to 4 or less and a solvent
EP0430302B1 (en) * 1989-12-01 1996-10-09 Tosoh Corporation Positive photosensitive compositions for forming lenses
US5068168A (en) * 1990-12-20 1991-11-26 Monsanto Company Styrene/maleates terpolymers
US5332650A (en) * 1991-09-06 1994-07-26 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive composition
US5346803A (en) * 1993-09-15 1994-09-13 Shin-Etsu Chemical Co., Ltd. Photoresist composition comprising a copolymer having a di-t-butyl fumarate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100854743B1 (ko) * 2002-08-30 2008-08-27 엘지전자 주식회사 밀폐형 압축기의 크랭크축

Also Published As

Publication number Publication date
US5482816A (en) 1996-01-09
US5332650A (en) 1994-07-26
KR100198177B1 (ko) 1999-06-15
DE4229816A1 (de) 1993-03-11

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