KR930002838Y1 - LPCVD(Low Pressure Chemical Vapor Deposition)장치 - Google Patents

LPCVD(Low Pressure Chemical Vapor Deposition)장치 Download PDF

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Publication number
KR930002838Y1
KR930002838Y1 KR2019900016940U KR900016940U KR930002838Y1 KR 930002838 Y1 KR930002838 Y1 KR 930002838Y1 KR 2019900016940 U KR2019900016940 U KR 2019900016940U KR 900016940 U KR900016940 U KR 900016940U KR 930002838 Y1 KR930002838 Y1 KR 930002838Y1
Authority
KR
South Korea
Prior art keywords
tube
substrate
supply pipe
inner tube
reactor
Prior art date
Application number
KR2019900016940U
Other languages
English (en)
Korean (ko)
Other versions
KR920010375U (ko
Inventor
김윤기
박문규
손정하
김희석
Original Assignee
삼성전자 주식회사
김광호
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자 주식회사, 김광호 filed Critical 삼성전자 주식회사
Priority to KR2019900016940U priority Critical patent/KR930002838Y1/ko
Priority to JP400281U priority patent/JPH0587942U/ja
Publication of KR920010375U publication Critical patent/KR920010375U/ko
Application granted granted Critical
Publication of KR930002838Y1 publication Critical patent/KR930002838Y1/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
KR2019900016940U 1990-11-05 1990-11-05 LPCVD(Low Pressure Chemical Vapor Deposition)장치 KR930002838Y1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR2019900016940U KR930002838Y1 (ko) 1990-11-05 1990-11-05 LPCVD(Low Pressure Chemical Vapor Deposition)장치
JP400281U JPH0587942U (ja) 1990-11-05 1990-12-10 減圧気相反応装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019900016940U KR930002838Y1 (ko) 1990-11-05 1990-11-05 LPCVD(Low Pressure Chemical Vapor Deposition)장치

Publications (2)

Publication Number Publication Date
KR920010375U KR920010375U (ko) 1992-06-17
KR930002838Y1 true KR930002838Y1 (ko) 1993-05-22

Family

ID=19305045

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019900016940U KR930002838Y1 (ko) 1990-11-05 1990-11-05 LPCVD(Low Pressure Chemical Vapor Deposition)장치

Country Status (2)

Country Link
JP (1) JPH0587942U (ja)
KR (1) KR930002838Y1 (ja)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58213415A (ja) * 1982-06-07 1983-12-12 Nippon Telegr & Teleph Corp <Ntt> 気相エピタキシヤル成長法及び装置
JPS6310532A (ja) * 1986-07-01 1988-01-18 Toppan Printing Co Ltd ＺｎＳｅ系化合物半導体の製造方法
JPH01251711A (ja) * 1988-03-31 1989-10-06 Furukawa Electric Co Ltd:The 気相成長装置

Also Published As

Publication number Publication date
KR920010375U (ko) 1992-06-17
JPH0587942U (ja) 1993-11-26

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