KR930002293B1 - 반도체 불휘발성메모리 및 그 제조방법 - Google Patents

반도체 불휘발성메모리 및 그 제조방법 Download PDF

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Publication number
KR930002293B1
KR930002293B1 KR1019900004362A KR900004362A KR930002293B1 KR 930002293 B1 KR930002293 B1 KR 930002293B1 KR 1019900004362 A KR1019900004362 A KR 1019900004362A KR 900004362 A KR900004362 A KR 900004362A KR 930002293 B1 KR930002293 B1 KR 930002293B1
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KR
South Korea
Prior art keywords
insulating film
ions
ion implantation
gate insulating
nonvolatile memory
Prior art date
Application number
KR1019900004362A
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English (en)
Korean (ko)
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KR910017645A (ko
Inventor
타카시 오오소네
타카시 호리
Original Assignee
마쯔시다덴기산교 가부시기가이샤
다니이 아끼오
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 마쯔시다덴기산교 가부시기가이샤, 다니이 아끼오 filed Critical 마쯔시다덴기산교 가부시기가이샤
Publication of KR910017645A publication Critical patent/KR910017645A/ko
Application granted granted Critical
Publication of KR930002293B1 publication Critical patent/KR930002293B1/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
KR1019900004362A 1988-10-14 1990-03-30 반도체 불휘발성메모리 및 그 제조방법 KR930002293B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63260044A JP2615922B2 (ja) 1988-10-14 1988-10-14 半導体不揮発性メモリ

Publications (2)

Publication Number Publication Date
KR910017645A KR910017645A (ko) 1991-11-05
KR930002293B1 true KR930002293B1 (ko) 1993-03-29

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ID=17342524

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900004362A KR930002293B1 (ko) 1988-10-14 1990-03-30 반도체 불휘발성메모리 및 그 제조방법

Country Status (2)

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JP (1) JP2615922B2 (ja)
KR (1) KR930002293B1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2965415B2 (ja) * 1991-08-27 1999-10-18 松下電器産業株式会社 半導体記憶装置
JP4191959B2 (ja) 2002-06-21 2008-12-03 富士通株式会社 薄膜積層デバイス、回路および薄膜積層デバイスの製造方法
JP2021144968A (ja) 2020-03-10 2021-09-24 キオクシア株式会社 記憶装置及び記憶装置の製造方法

Also Published As

Publication number Publication date
KR910017645A (ko) 1991-11-05
JP2615922B2 (ja) 1997-06-04
JPH02106068A (ja) 1990-04-18

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