KR930002038B1 - 증폭기 회로 - Google Patents

증폭기 회로 Download PDF

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Publication number
KR930002038B1
KR930002038B1 KR1019840004477A KR840004477A KR930002038B1 KR 930002038 B1 KR930002038 B1 KR 930002038B1 KR 1019840004477 A KR1019840004477 A KR 1019840004477A KR 840004477 A KR840004477 A KR 840004477A KR 930002038 B1 KR930002038 B1 KR 930002038B1
Authority
KR
South Korea
Prior art keywords
region
amplifier circuit
semiconductor
substrate
integrated amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019840004477A
Other languages
English (en)
Korean (ko)
Other versions
KR850001643A (ko
Inventor
벡켄바흐 발터
린더레 하인쯔
Original Assignee
텔레풍켄 엘렉트로닉 게엠베하
클라우스 봄 하르트·한스-위르겐 마우테
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 텔레풍켄 엘렉트로닉 게엠베하, 클라우스 봄 하르트·한스-위르겐 마우테 filed Critical 텔레풍켄 엘렉트로닉 게엠베하
Publication of KR850001643A publication Critical patent/KR850001643A/ko
Application granted granted Critical
Publication of KR930002038B1 publication Critical patent/KR930002038B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/083—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/191—Tuned amplifiers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Bipolar Integrated Circuits (AREA)
KR1019840004477A 1983-07-27 1984-07-27 증폭기 회로 Expired - Fee Related KR930002038B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3326958A DE3326958C2 (de) 1983-07-27 1983-07-27 Integrierte Schaltung zum Verstärken
DEP3326958.0 1983-07-27

Publications (2)

Publication Number Publication Date
KR850001643A KR850001643A (ko) 1985-03-30
KR930002038B1 true KR930002038B1 (ko) 1993-03-22

Family

ID=6204972

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840004477A Expired - Fee Related KR930002038B1 (ko) 1983-07-27 1984-07-27 증폭기 회로

Country Status (4)

Country Link
US (1) US4617524A (https=)
JP (1) JPS6090406A (https=)
KR (1) KR930002038B1 (https=)
DE (1) DE3326958C2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4862018A (en) * 1987-11-30 1989-08-29 Texas Instruments Incorporated Noise reduction for output drivers
DE3839241A1 (de) * 1988-11-21 1990-05-23 Telefunken Electronic Gmbh Verstaerkerschaltung mit einem verstaerkertransistor
GB2268348B (en) * 1992-06-30 1996-01-03 Texas Instruments Ltd Noise reduction circuit
DE19509295A1 (de) * 1995-03-15 1996-09-19 Telefunken Microelectron Verstärkerschaltung mit Transistor in Basis-Grundschaltung
DE19532990C1 (de) * 1995-09-07 1996-11-14 Telefunken Microelectron Integrierte Halbleiteranordnung mit einem NPN-Transistor in Basisschaltung
US6731174B2 (en) * 2002-09-12 2004-05-04 Motorola, Inc. Radio frequency power amplifier device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1764556C3 (de) * 1968-06-26 1979-01-04 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zur Herstellung eines Sperrschichtkondensatorelements und danach hergestellte Sperrschichtkondensatorelemente
DE1944688A1 (de) * 1969-09-03 1971-03-04 Licentia Gmbh Integrierte Halbleiteranordnung
US3860836A (en) * 1972-12-01 1975-01-14 Honeywell Inc Stabilization of emitter followers
US3953875A (en) * 1974-01-02 1976-04-27 Motorola, Inc. Capacitor structure and circuit facilitating increased frequency stability of integrated circuits
FR2304179A1 (fr) * 1975-03-14 1976-10-08 Ibm Dispositif semi-conducteur bipolaire monte en emetteur-suiveur dont l'entree est stabilisee
DE2834402C2 (de) * 1978-08-05 1982-09-02 Philips Patentverwaltung Gmbh, 2000 Hamburg Monolithische, integrierte Halbleiteranordnung mit einer bipolaren Kapazität und Verwendung einer solchen Halbleiteranordnung
DE2927934A1 (de) * 1979-07-11 1981-01-15 Itt Ind Gmbh Deutsche Verwendung einer bipolaren transistorstruktur innerhalb integrierter schaltungen

Also Published As

Publication number Publication date
KR850001643A (ko) 1985-03-30
DE3326958C2 (de) 1986-07-10
JPS6090406A (ja) 1985-05-21
US4617524A (en) 1986-10-14
DE3326958A1 (de) 1985-02-14
JPH0560685B2 (https=) 1993-09-02

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