JPH0560685B2 - - Google Patents

Info

Publication number
JPH0560685B2
JPH0560685B2 JP59151481A JP15148184A JPH0560685B2 JP H0560685 B2 JPH0560685 B2 JP H0560685B2 JP 59151481 A JP59151481 A JP 59151481A JP 15148184 A JP15148184 A JP 15148184A JP H0560685 B2 JPH0560685 B2 JP H0560685B2
Authority
JP
Japan
Prior art keywords
region
amplifier circuit
semiconductor
capacitance
circuit according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59151481A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6090406A (ja
Inventor
Betsukenbatsuha Uarutaa
Rindeare Haintsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Electronic GmbH
Original Assignee
Telefunken Electronic GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken Electronic GmbH filed Critical Telefunken Electronic GmbH
Publication of JPS6090406A publication Critical patent/JPS6090406A/ja
Publication of JPH0560685B2 publication Critical patent/JPH0560685B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/083—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/191—Tuned amplifiers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Bipolar Integrated Circuits (AREA)
JP59151481A 1983-07-27 1984-07-23 増幅回路 Granted JPS6090406A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3326958A DE3326958C2 (de) 1983-07-27 1983-07-27 Integrierte Schaltung zum Verstärken
DE3326958.0 1983-07-27

Publications (2)

Publication Number Publication Date
JPS6090406A JPS6090406A (ja) 1985-05-21
JPH0560685B2 true JPH0560685B2 (https=) 1993-09-02

Family

ID=6204972

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59151481A Granted JPS6090406A (ja) 1983-07-27 1984-07-23 増幅回路

Country Status (4)

Country Link
US (1) US4617524A (https=)
JP (1) JPS6090406A (https=)
KR (1) KR930002038B1 (https=)
DE (1) DE3326958C2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4862018A (en) * 1987-11-30 1989-08-29 Texas Instruments Incorporated Noise reduction for output drivers
DE3839241A1 (de) * 1988-11-21 1990-05-23 Telefunken Electronic Gmbh Verstaerkerschaltung mit einem verstaerkertransistor
GB2268348B (en) * 1992-06-30 1996-01-03 Texas Instruments Ltd Noise reduction circuit
DE19509295A1 (de) * 1995-03-15 1996-09-19 Telefunken Microelectron Verstärkerschaltung mit Transistor in Basis-Grundschaltung
DE19532990C1 (de) * 1995-09-07 1996-11-14 Telefunken Microelectron Integrierte Halbleiteranordnung mit einem NPN-Transistor in Basisschaltung
US6731174B2 (en) * 2002-09-12 2004-05-04 Motorola, Inc. Radio frequency power amplifier device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1764556C3 (de) * 1968-06-26 1979-01-04 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zur Herstellung eines Sperrschichtkondensatorelements und danach hergestellte Sperrschichtkondensatorelemente
DE1944688A1 (de) * 1969-09-03 1971-03-04 Licentia Gmbh Integrierte Halbleiteranordnung
US3860836A (en) * 1972-12-01 1975-01-14 Honeywell Inc Stabilization of emitter followers
US3953875A (en) * 1974-01-02 1976-04-27 Motorola, Inc. Capacitor structure and circuit facilitating increased frequency stability of integrated circuits
FR2304179A1 (fr) * 1975-03-14 1976-10-08 Ibm Dispositif semi-conducteur bipolaire monte en emetteur-suiveur dont l'entree est stabilisee
DE2834402C2 (de) * 1978-08-05 1982-09-02 Philips Patentverwaltung Gmbh, 2000 Hamburg Monolithische, integrierte Halbleiteranordnung mit einer bipolaren Kapazität und Verwendung einer solchen Halbleiteranordnung
DE2927934A1 (de) * 1979-07-11 1981-01-15 Itt Ind Gmbh Deutsche Verwendung einer bipolaren transistorstruktur innerhalb integrierter schaltungen

Also Published As

Publication number Publication date
KR850001643A (ko) 1985-03-30
DE3326958C2 (de) 1986-07-10
JPS6090406A (ja) 1985-05-21
US4617524A (en) 1986-10-14
DE3326958A1 (de) 1985-02-14
KR930002038B1 (ko) 1993-03-22

Similar Documents

Publication Publication Date Title
US6903459B2 (en) High frequency semiconductor device
KR930003521B1 (ko) 증폭기회로
US4504796A (en) Microwave circuit apparatus
US20040217818A1 (en) Low noise amplifier
JPH0560685B2 (https=)
US7298213B2 (en) Input impedance matching circuit for low noise amplifier
US6714086B1 (en) Symmetric oscillators
JP2005531143A (ja) ミクストシグナルｒｆアプリケーションおよび回路のための集積回路構造
US6278329B1 (en) Low-noise amplifier stage with matching network
US5151775A (en) Integrated circuit device having improved substrate capacitance isolation
US6664609B2 (en) High frequency differential amplification circuit with reduced parasitic capacitance
US3641441A (en) Frequency conversion module including emitter follower mixer
JP3750890B2 (ja) 集積化ミキサ回路
US10748860B2 (en) Amplifier
JP4031032B2 (ja) 不所望なキャパシタンスを補償する手段を有する電子集積回路装置
JP3356097B2 (ja) 自己バイアス回路および自己バイアス回路の配置方法
JP4357768B2 (ja) 半導体集積回路
JP3174248B2 (ja) 半導体増幅装置
JP2000188373A (ja) スパイラルインダクター
JP3390070B2 (ja) Ｌｃ素子，半導体装置及びｌｃ素子の製造方法
JPH07170138A (ja) 低雑音分布増幅器
JP2025186975A (ja) 高周波増幅器
JPH054343Y2 (https=)
JPS641936B2 (https=)
JPH0750779B2 (ja) 半導体集積回路