KR920013462A - 반도체 기억장치 - Google Patents

반도체 기억장치 Download PDF

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Publication number
KR920013462A
KR920013462A KR1019910018490A KR910018490A KR920013462A KR 920013462 A KR920013462 A KR 920013462A KR 1019910018490 A KR1019910018490 A KR 1019910018490A KR 910018490 A KR910018490 A KR 910018490A KR 920013462 A KR920013462 A KR 920013462A
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KR
South Korea
Prior art keywords
internal
response
memory cell
signal
instruction signal
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Application number
KR1019910018490A
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English (en)
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KR950000959B1 (ko
Inventor
잇세이 이노우에
가쓰꼬 도사기
Original Assignee
시기 모리야
미쓰비시뎅끼 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 시기 모리야, 미쓰비시뎅끼 가부시끼가이샤 filed Critical 시기 모리야
Publication of KR920013462A publication Critical patent/KR920013462A/ko
Application granted granted Critical
Publication of KR950000959B1 publication Critical patent/KR950000959B1/ko

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)

Abstract

내용 없음

Description

반도체 기억장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 이 발명의 한 실시예인 반도체 기억장치에 있어서의 라이트인에이블용 버퍼회로 및 아웃프트인에이블용 버퍼회로의 구성을 표시하는 블럭도, 제2도는 이 발명의 다른 실시예인 반도체기억장치의 데이터 입력버퍼의 구성을 표시하는 블럭도.

Claims (1)

  1. 행 및 열로 이루어지는 매트릭스상으로 배열된 복수의 메모리셀로 이루어지는 메모리셀어레이, 외부로부터 주어지는 동작타이밍규정신호에 응답하여 복수의 내부 클럭신호를 발생하는 내부클럭발생수단, 외부로부터 주어지는 어드레스신호와 상기 내부클럭 발생수단으로부터의 제1의 내부클럭신호와에 응답하여 상기 메모리셀어레이로부터 대응한 메모리셀을 선택하는 선택수단, 상기 내부클럭발생수단으로부터의 제2의 내부클럭신호와 외부로부터 주어지는 출력지시신호와에 응답하여 내부출력지시신호를 발생하는 수단, 상기 내부출력지시신호에 응답하여 활성화되고, 상기 메모리셀어레이내의 상기 선택수단에 의하여 선택된 메모셀로부터 판독된 데이터를 장치의 부로 출력하는 출력수단, 상기 내부클럭발생수단으로부터의 제3의 내부클럭 신호와 외부로부터 주어지는 기록지시신호와에 응답하여 내부기록지시신호를 발생하는 내부기록지시신호발생수단, 상기 내부기록지시신호발생수단은 상기 내부출력지시신호에 응답하여 상기 내부기록지시신호의 발생을 금지하는 수단을 포함하고, 및 상기 내부기록지시 신호에 응답하여 활성화되고, 상기 메모리셀어레이내의 상기 선택 수단에 의하여 선택된 메모리셀에의 기록을 위하여 외부로부터 주어지는 기록데이터로부터 내부기록데이터를 생성하는 입력수단을 구비하는 반도체 기억장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910018490A 1990-12-12 1991-10-19 반도체기억장치 KR950000959B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP90-401583 1990-12-12
JP2401583A JPH04214290A (ja) 1990-12-12 1990-12-12 半導体記憶装置

Publications (2)

Publication Number Publication Date
KR920013462A true KR920013462A (ko) 1992-07-29
KR950000959B1 KR950000959B1 (ko) 1995-02-06

Family

ID=18511411

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910018490A KR950000959B1 (ko) 1990-12-12 1991-10-19 반도체기억장치

Country Status (4)

Country Link
US (1) US5278789A (ko)
JP (1) JPH04214290A (ko)
KR (1) KR950000959B1 (ko)
DE (1) DE4140846C2 (ko)

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Also Published As

Publication number Publication date
KR950000959B1 (ko) 1995-02-06
DE4140846A1 (de) 1992-06-17
JPH04214290A (ja) 1992-08-05
DE4140846C2 (de) 1995-07-06
US5278789A (en) 1994-01-11

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