KR920010825B1 - Semiconductor static memory device - Google Patents

Semiconductor static memory device

Info

Publication number
KR920010825B1
KR920010825B1 KR8912416A KR890012416A KR920010825B1 KR 920010825 B1 KR920010825 B1 KR 920010825B1 KR 8912416 A KR8912416 A KR 8912416A KR 890012416 A KR890012416 A KR 890012416A KR 920010825 B1 KR920010825 B1 KR 920010825B1
Authority
KR
South Korea
Prior art keywords
memory device
static memory
semiconductor static
semiconductor
static
Prior art date
Application number
KR8912416A
Other languages
English (en)
Other versions
KR900005447A (ko
Inventor
Shigeki Nozaki
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of KR900005447A publication Critical patent/KR900005447A/ko
Application granted granted Critical
Publication of KR920010825B1 publication Critical patent/KR920010825B1/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/30—Marginal testing, e.g. by varying supply voltage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Static Random-Access Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
KR8912416A 1988-09-02 1989-08-30 Semiconductor static memory device KR920010825B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63221152A JPH0268796A (ja) 1988-09-02 1988-09-02 半導体記憶装置
JP63-221152 1988-09-02

Publications (2)

Publication Number Publication Date
KR900005447A KR900005447A (ko) 1990-04-14
KR920010825B1 true KR920010825B1 (en) 1992-12-17

Family

ID=16762288

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8912416A KR920010825B1 (en) 1988-09-02 1989-08-30 Semiconductor static memory device

Country Status (5)

Country Link
US (1) US5119335A (ko)
EP (1) EP0357516B1 (ko)
JP (1) JPH0268796A (ko)
KR (1) KR920010825B1 (ko)
DE (1) DE68920237T2 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0747903B1 (en) * 1995-04-28 2002-04-10 STMicroelectronics S.r.l. Reading circuit for memory cells devices having a low supply voltage
JP3606951B2 (ja) * 1995-06-26 2005-01-05 株式会社ルネサステクノロジ 半導体記憶装置
GB2370126B (en) 2000-07-18 2004-01-21 Sgs Thomson Microelectronics Memory testing
JP4002094B2 (ja) * 2001-11-20 2007-10-31 富士通株式会社 半導体集積回路および半導体集積回路の試験方法
US8929154B2 (en) * 2011-10-06 2015-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Layout of memory cells

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3995215A (en) * 1974-06-26 1976-11-30 International Business Machines Corporation Test technique for semiconductor memory array
JPS5922316B2 (ja) * 1976-02-24 1984-05-25 株式会社東芝 ダイナミツクメモリ装置
JPS5891594A (ja) * 1981-11-27 1983-05-31 Fujitsu Ltd ダイナミツク型半導体記憶装置
JPS58169958A (ja) * 1982-03-31 1983-10-06 Fujitsu Ltd Ｍｉｓスタテイツク・ランダムアクセスメモリ
JPS5942690A (ja) * 1982-09-03 1984-03-09 Toshiba Corp 半導体記憶装置
US4551641A (en) * 1983-11-23 1985-11-05 Motorola, Inc. Sense amplifier
JPS60242582A (ja) * 1984-05-16 1985-12-02 Toshiba Corp 半導体記憶装置のセンス増幅器
US4719418A (en) * 1985-02-19 1988-01-12 International Business Machines Corporation Defect leakage screen system
GB2172761B (en) * 1985-03-18 1988-11-09 Texas Instruments Ltd Random access memory using semiconductor data storage elements
JPH0743935B2 (ja) * 1985-03-25 1995-05-15 日立超エル・エス・アイ・エンジニアリング株式会社 スタティック型ｒａｍ
JPS6344400A (ja) * 1986-08-08 1988-02-25 Matsushita Electric Ind Co Ltd 半導体記憶装置
JPS6376193A (ja) * 1986-09-19 1988-04-06 Fujitsu Ltd 半導体記憶装置
JPS63108589A (ja) * 1986-10-24 1988-05-13 Mitsubishi Electric Corp 半導体記憶装置
JPS63144488A (ja) * 1986-12-06 1988-06-16 Fujitsu Ltd 半導体記憶装置

Also Published As

Publication number Publication date
DE68920237D1 (de) 1995-02-09
EP0357516B1 (en) 1994-12-28
EP0357516A2 (en) 1990-03-07
DE68920237T2 (de) 1995-05-04
KR900005447A (ko) 1990-04-14
EP0357516A3 (en) 1991-09-04
US5119335A (en) 1992-06-02
JPH0268796A (ja) 1990-03-08

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Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 19951213

Year of fee payment: 4

LAPS Lapse due to unpaid annual fee