KR920008948A - 지그재그 인터라인 고체 촬상소자 - Google Patents

지그재그 인터라인 고체 촬상소자

Info

Publication number
KR920008948A
KR920008948A KR1019900016260A KR900016260A KR920008948A KR 920008948 A KR920008948 A KR 920008948A KR 1019900016260 A KR1019900016260 A KR 1019900016260A KR 900016260 A KR900016260 A KR 900016260A KR 920008948 A KR920008948 A KR 920008948A
Authority
KR
South Korea
Prior art keywords
zigzag
imaging device
state imaging
interline solid
interline
Prior art date
Application number
KR1019900016260A
Other languages
English (en)
Other versions
KR930005746B1 (ko
Inventor
이성민
Original Assignee
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 금성일렉트론 주식회사 filed Critical 금성일렉트론 주식회사
Priority to KR1019900016260A priority Critical patent/KR930005746B1/ko
Priority to US07/774,627 priority patent/US5210613A/en
Priority to DE4133748A priority patent/DE4133748C2/de
Priority to JP3292049A priority patent/JP2838611B2/ja
Publication of KR920008948A publication Critical patent/KR920008948A/ko
Application granted granted Critical
Publication of KR930005746B1 publication Critical patent/KR930005746B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/745—Circuitry for generating timing or clock signals
KR1019900016260A 1990-10-13 1990-10-13 지그재그 인터라인 고체 촬상소자 KR930005746B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019900016260A KR930005746B1 (ko) 1990-10-13 1990-10-13 지그재그 인터라인 고체 촬상소자
US07/774,627 US5210613A (en) 1990-10-13 1991-10-10 Zigzag interline transfer type CCD image sensor
DE4133748A DE4133748C2 (de) 1990-10-13 1991-10-11 CCD-Bildsensor
JP3292049A JP2838611B2 (ja) 1990-10-13 1991-10-14 Ｃｃｄ映像素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900016260A KR930005746B1 (ko) 1990-10-13 1990-10-13 지그재그 인터라인 고체 촬상소자

Publications (2)

Publication Number Publication Date
KR920008948A true KR920008948A (ko) 1992-05-28
KR930005746B1 KR930005746B1 (ko) 1993-06-24

Family

ID=19304611

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900016260A KR930005746B1 (ko) 1990-10-13 1990-10-13 지그재그 인터라인 고체 촬상소자

Country Status (4)

Country Link
US (1) US5210613A (ko)
JP (1) JP2838611B2 (ko)
KR (1) KR930005746B1 (ko)
DE (1) DE4133748C2 (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5890232A (en) * 1997-11-25 1999-04-06 Park; Nam-Tae Helmet with an air cushion buffer
KR100868191B1 (ko) * 2002-04-26 2008-11-10 매그나칩 반도체 유한회사 수평 전하운송부를 제거한 전하결합소자

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5355165A (en) * 1992-08-06 1994-10-11 Princeton Scientific Instruments, Inc. Very high frame rate CCD imager
US5892542A (en) * 1994-06-09 1999-04-06 Intel Corporation Sectional raster output image sensor
US5835137A (en) * 1995-06-21 1998-11-10 Eastman Kodak Company Method and system for compensating for motion during imaging
GB2313186A (en) * 1996-05-09 1997-11-19 Nac Inc Charge-transfer device for imaging
JP3830590B2 (ja) * 1996-10-30 2006-10-04 株式会社東芝 固体撮像装置
EP1378862B1 (en) * 2001-03-13 2010-10-20 Ecchandes Inc. Visual device, interlocking counter, and image sensor
JP2003014691A (ja) * 2001-06-29 2003-01-15 Horiba Ltd Ｃｃｄセンサ
CN100413084C (zh) * 2006-09-18 2008-08-20 西安理工大学 绕行转移面阵电荷耦合器件ccd
GB2443204A (en) * 2006-10-04 2008-04-30 Sharp Kk Photosensor and ambient light sensor
US8479374B2 (en) 2010-12-14 2013-07-09 Truesense Imaging, Inc. Method of producing an image sensor having multiple output channels
US8773564B2 (en) 2010-12-14 2014-07-08 Truesense Imaging, Inc. Image sensor with charge multiplication
US8395689B2 (en) * 2010-12-20 2013-03-12 Omnivision Technologies, Inc. Image sensor with charge multiplication output channel and charge sensing output channel
US8601674B2 (en) 2010-12-20 2013-12-10 Omnivision Technologies, Inc. Method for producing an image sensor with charge multiplication output channel and charge sensing output channel
US8643758B2 (en) 2010-12-20 2014-02-04 Omnivision Technologies, Inc. Method for processing an image captured by an image sensor having a charge multiplication output channel and a charge sensing output channel

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6028265A (ja) * 1983-07-27 1985-02-13 Canon Inc 電荷転送デバイス
JPS6072384A (ja) * 1983-09-28 1985-04-24 Fujitsu Ltd 撮像装置
JPS6193781A (ja) * 1984-10-15 1986-05-12 Mitsubishi Electric Corp 固体撮像装置
JPS6258787A (ja) * 1985-09-06 1987-03-14 Fuji Photo Film Co Ltd 固体撮像素子
US4836788A (en) * 1985-11-12 1989-06-06 Sony Corporation Production of solid-state image pick-up device with uniform distribution of dopants
JPS63226061A (ja) * 1987-03-14 1988-09-20 Fujitsu Ltd カラ−イメ−ジセンサ
JPH0633737Y2 (ja) * 1988-11-16 1994-08-31 三洋電機株式会社 固体撮像素子
JPH02262344A (ja) * 1989-03-31 1990-10-25 Sony Corp 出力回路
JP2504845B2 (ja) * 1989-10-06 1996-06-05 シャープ株式会社 固体撮像装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5890232A (en) * 1997-11-25 1999-04-06 Park; Nam-Tae Helmet with an air cushion buffer
KR100868191B1 (ko) * 2002-04-26 2008-11-10 매그나칩 반도체 유한회사 수평 전하운송부를 제거한 전하결합소자

Also Published As

Publication number Publication date
US5210613A (en) 1993-05-11
JP2838611B2 (ja) 1998-12-16
JPH06121238A (ja) 1994-04-28
DE4133748C2 (de) 2000-07-20
KR930005746B1 (ko) 1993-06-24
DE4133748A1 (de) 1992-04-16

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Legal Events

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A201 Request for examination
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E701 Decision to grant or registration of patent right
GRNT Written decision to grant
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