KR920007921A - 실리콘 디이미드, 이의 제조방법 및 이로부터 수득된 실리콘 니트라이드 - Google Patents
실리콘 디이미드, 이의 제조방법 및 이로부터 수득된 실리콘 니트라이드 Download PDFInfo
- Publication number
- KR920007921A KR920007921A KR1019910017069A KR910017069A KR920007921A KR 920007921 A KR920007921 A KR 920007921A KR 1019910017069 A KR1019910017069 A KR 1019910017069A KR 910017069 A KR910017069 A KR 910017069A KR 920007921 A KR920007921 A KR 920007921A
- Authority
- KR
- South Korea
- Prior art keywords
- silicon
- less
- diimide
- ppm
- same
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
- C01B21/087—Compounds containing nitrogen and non-metals and optionally metals containing one or more hydrogen atoms
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Products (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (9)
- 탄소 함량이 0.5중량% 이하이고 염소 함량이 20ppm 이하인 실리콘 디이미드.
- 제1항에 있어서, 염소 함량이 10ppm 미만인 실리콘 디이미드.
- 암모니아를 승압하에 50℃ 내지 300℃에서 하기 일반식의 오가닐아미노실란과 반응시킴을 특징으로 하여, 탄소 함량이 0.5중량% 이하이고 염소 함량이 20ppm 이하인 실리콘 디이미드를 제조하는 방법.Si(NRR3)4상기식에서, R 및 R3는 동일하거나 상이하며, C1-C6-알킬, 비닐, 페닐 또는 수소를 나타낸다.
- 제3항에 있어서, R이 CH3이고 R3가 수소인 방법.
- 제3항에 있어서, R이 C2H5이고 R3가 수소인 방법.
- 제3항에 있어서, 암모니아에 대한 오가닐아미노실란의 몰비가 1:3 내지 1:1,000인 방법.
- 제3항에 있어서, 수득한 반응 생성물을 600℃ 내지 1,200℃에서 암모니아성 대기로 20분 내지 6시간 동안 처리하는 방법.
- 제3항에 있어서, 실리콘 디이미드를 수득한 후, 이를 질소-함유 대기중에서 1,000 내지 1,500℃에서 20분 내지 12시간 동안 가열하여 실리콘 니트라이드로 전환시키는 방법.
- α-상 80중량% 이상으로 이루어지고 질소 38.5중량% 이상을 함유하며 염소가 검출되지 않는 실리콘 니트라이드로 이루어진, 제8항에 따른 방법에 의해 제조된 Si3N4.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEP4031070.1 | 1990-10-02 | ||
DE4031070A DE4031070A1 (de) | 1990-10-02 | 1990-10-02 | Siliciumdiimid, verfahren zu dessen herstellung sowie daraus erhaltenes siliciumnitrid |
Publications (1)
Publication Number | Publication Date |
---|---|
KR920007921A true KR920007921A (ko) | 1992-05-27 |
Family
ID=6415387
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910017069A KR920007921A (ko) | 1990-10-02 | 1991-09-30 | 실리콘 디이미드, 이의 제조방법 및 이로부터 수득된 실리콘 니트라이드 |
Country Status (7)
Country | Link |
---|---|
US (1) | US5258169A (ko) |
EP (1) | EP0479050B1 (ko) |
JP (1) | JPH04265211A (ko) |
KR (1) | KR920007921A (ko) |
CA (1) | CA2052401A1 (ko) |
DE (2) | DE4031070A1 (ko) |
ES (1) | ES2055503T3 (ko) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4200787A1 (de) * | 1992-01-15 | 1993-07-22 | Bayer Ag | Verfahren zur herstellung von si(pfeil abwaerts)3(pfeil abwaerts)(pfeil hoch)n(pfeil hoch)(pfeil abwaerts)4(pfeil abwaerts), neue ausgangsverbindung hierfuer sowie verfahren zu dessen herstellung |
EP0554020B1 (en) * | 1992-01-24 | 1997-04-09 | Sumitomo Electric Industries, Limited | Silicon nitride powder and method for its manufacture |
JP3314554B2 (ja) * | 1993-12-10 | 2002-08-12 | 宇部興産株式会社 | 窒化珪素粉末及び窒化珪素含有水系スラリー |
DE19651731B4 (de) * | 1995-12-12 | 2012-08-16 | Ube Industries, Ltd. | Verfahren zur Herstellung einer Stickstoff enthaltenden Silanverbindung |
US6264908B1 (en) | 1997-12-04 | 2001-07-24 | Thomas C. Maganas | Methods and systems for the catalytic formation of silicon nitride using a fluidized bed of silica |
JP2003166060A (ja) * | 2001-11-30 | 2003-06-13 | L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude | Cvd法によるシリコン窒化物膜、シリコンオキシ窒化物膜、またはシリコン酸化物膜の製造方法 |
JP4607637B2 (ja) * | 2005-03-28 | 2011-01-05 | 東京エレクトロン株式会社 | シリコン窒化膜の形成方法、シリコン窒化膜の形成装置及びプログラム |
US8318966B2 (en) * | 2006-06-23 | 2012-11-27 | Praxair Technology, Inc. | Organometallic compounds |
DE102008062177A1 (de) | 2008-12-13 | 2010-07-08 | Alzchem Trostberg Gmbh | Verfahren zur Herstellung von hochreinem Siliciumnitrid |
EP2415708B1 (en) | 2009-03-30 | 2017-12-20 | Ube Industries, Ltd. | Nitrogen-containing silane compound powder and method for producing same |
EP3020686A4 (en) * | 2013-07-11 | 2017-03-29 | UBE Industries, Ltd. | Silicon nitride powder for mold release agent of casting mold for casting polycrystalline silicon ingot and method for manufacturing said silicon nitride powder, slurry containing said silicon nitride powder, casting mold for casting polycrystalline silicon ingot and method for manufacturing same, and method for manufacturing polycrystalline silicon ingot cast using said casting mold |
CN115432676B (zh) * | 2021-06-04 | 2024-03-26 | 中国科学院过程工程研究所 | 一种多级流化床制备高质量氮化硅粉体的系统及方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54145400A (en) * | 1978-05-08 | 1979-11-13 | Ube Ind Ltd | Production of metal nitride powder |
JPS5595605A (en) * | 1979-01-10 | 1980-07-21 | Toyo Soda Mfg Co Ltd | High purity silicon nitride and production thereof |
JPS58213607A (ja) * | 1982-06-07 | 1983-12-12 | Shin Etsu Chem Co Ltd | シリコンイミドおよび/または窒化けい素の製造方法 |
US4613490A (en) * | 1984-05-08 | 1986-09-23 | Mitsubishi Gas Chemical Company, Inc. | Process for preparing silicon nitride, silicon carbide or fine powdery mixture thereof |
JPS61174108A (ja) * | 1985-01-25 | 1986-08-05 | Toa Nenryo Kogyo Kk | シリコンイミド又はポリシラザンの製造方法 |
JPS61287930A (ja) * | 1985-06-17 | 1986-12-18 | Chisso Corp | ポリシラザンの製造方法 |
ATE54293T1 (de) * | 1985-12-09 | 1990-07-15 | Toa Nenryo Kogyo Kk | Verfahren zur herstellung von siliciumimid und dessen weiterberarbeitung zu siliciumnitrid. |
US4686095A (en) * | 1985-12-23 | 1987-08-11 | Ford Motor Company | Method of making ultrapure silicon nitride precursor |
US4795622A (en) * | 1986-04-24 | 1989-01-03 | Toa Nenryo Kogyo Kabushiki Kaisha | Method for producing silicon-imide |
JPS6339885A (ja) * | 1986-08-06 | 1988-02-20 | Toa Nenryo Kogyo Kk | 窒化ケイ素前駆体および窒化ケイ素粉末の製造方法 |
JP2632816B2 (ja) * | 1986-10-28 | 1997-07-23 | 東燃株式会社 | 窒化ケイ素の製造方法 |
US4772516A (en) * | 1987-11-09 | 1988-09-20 | Mahone Louis G | Stable methylpolydisilylazane polymers |
-
1990
- 1990-10-02 DE DE4031070A patent/DE4031070A1/de not_active Withdrawn
-
1991
- 1991-09-19 DE DE59101851T patent/DE59101851D1/de not_active Expired - Fee Related
- 1991-09-19 EP EP91115885A patent/EP0479050B1/de not_active Expired - Lifetime
- 1991-09-19 ES ES91115885T patent/ES2055503T3/es not_active Expired - Lifetime
- 1991-09-20 US US07/763,314 patent/US5258169A/en not_active Expired - Fee Related
- 1991-09-27 CA CA002052401A patent/CA2052401A1/en not_active Abandoned
- 1991-09-30 JP JP3276292A patent/JPH04265211A/ja active Pending
- 1991-09-30 KR KR1019910017069A patent/KR920007921A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
ES2055503T3 (es) | 1994-08-16 |
CA2052401A1 (en) | 1992-04-03 |
JPH04265211A (ja) | 1992-09-21 |
DE4031070A1 (de) | 1992-04-09 |
EP0479050B1 (de) | 1994-06-08 |
EP0479050A1 (de) | 1992-04-08 |
DE59101851D1 (de) | 1994-07-14 |
US5258169A (en) | 1993-11-02 |
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