KR920007921A - 실리콘 디이미드, 이의 제조방법 및 이로부터 수득된 실리콘 니트라이드 - Google Patents

실리콘 디이미드, 이의 제조방법 및 이로부터 수득된 실리콘 니트라이드 Download PDF

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KR920007921A
KR920007921A KR1019910017069A KR910017069A KR920007921A KR 920007921 A KR920007921 A KR 920007921A KR 1019910017069 A KR1019910017069 A KR 1019910017069A KR 910017069 A KR910017069 A KR 910017069A KR 920007921 A KR920007921 A KR 920007921A
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South Korea
Prior art keywords
silicon
less
diimide
ppm
same
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KR1019910017069A
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English (en)
Inventor
반나가트 울리히
쉐르반 아드리안
얀센 마르틴
발두스 한스-페터
아일링 알로이스
Original Assignee
클라우스 댄너, 요아힘 그렘
바이엘 아크티엔게젤샤프트
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Publication of KR920007921A publication Critical patent/KR920007921A/ko

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
    • C01B21/087—Compounds containing nitrogen and non-metals and optionally metals containing one or more hydrogen atoms
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/12—Surface area

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Products (AREA)

Abstract

내용 없음

Description

실리콘 디이미드, 이의 제조방법 및 이로부터 수득된 실리콘 니트라이드
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (9)

  1. 탄소 함량이 0.5중량% 이하이고 염소 함량이 20ppm 이하인 실리콘 디이미드.
  2. 제1항에 있어서, 염소 함량이 10ppm 미만인 실리콘 디이미드.
  3. 암모니아를 승압하에 50℃ 내지 300℃에서 하기 일반식의 오가닐아미노실란과 반응시킴을 특징으로 하여, 탄소 함량이 0.5중량% 이하이고 염소 함량이 20ppm 이하인 실리콘 디이미드를 제조하는 방법.
    Si(NRR3)4
    상기식에서, R 및 R3는 동일하거나 상이하며, C1-C6-알킬, 비닐, 페닐 또는 수소를 나타낸다.
  4. 제3항에 있어서, R이 CH3이고 R3가 수소인 방법.
  5. 제3항에 있어서, R이 C2H5이고 R3가 수소인 방법.
  6. 제3항에 있어서, 암모니아에 대한 오가닐아미노실란의 몰비가 1:3 내지 1:1,000인 방법.
  7. 제3항에 있어서, 수득한 반응 생성물을 600℃ 내지 1,200℃에서 암모니아성 대기로 20분 내지 6시간 동안 처리하는 방법.
  8. 제3항에 있어서, 실리콘 디이미드를 수득한 후, 이를 질소-함유 대기중에서 1,000 내지 1,500℃에서 20분 내지 12시간 동안 가열하여 실리콘 니트라이드로 전환시키는 방법.
  9. α-상 80중량% 이상으로 이루어지고 질소 38.5중량% 이상을 함유하며 염소가 검출되지 않는 실리콘 니트라이드로 이루어진, 제8항에 따른 방법에 의해 제조된 Si3N4.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910017069A 1990-10-02 1991-09-30 실리콘 디이미드, 이의 제조방법 및 이로부터 수득된 실리콘 니트라이드 KR920007921A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEP4031070.1 1990-10-02
DE4031070A DE4031070A1 (de) 1990-10-02 1990-10-02 Siliciumdiimid, verfahren zu dessen herstellung sowie daraus erhaltenes siliciumnitrid

Publications (1)

Publication Number Publication Date
KR920007921A true KR920007921A (ko) 1992-05-27

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KR1019910017069A KR920007921A (ko) 1990-10-02 1991-09-30 실리콘 디이미드, 이의 제조방법 및 이로부터 수득된 실리콘 니트라이드

Country Status (7)

Country Link
US (1) US5258169A (ko)
EP (1) EP0479050B1 (ko)
JP (1) JPH04265211A (ko)
KR (1) KR920007921A (ko)
CA (1) CA2052401A1 (ko)
DE (2) DE4031070A1 (ko)
ES (1) ES2055503T3 (ko)

Families Citing this family (12)

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DE4200787A1 (de) * 1992-01-15 1993-07-22 Bayer Ag Verfahren zur herstellung von si(pfeil abwaerts)3(pfeil abwaerts)(pfeil hoch)n(pfeil hoch)(pfeil abwaerts)4(pfeil abwaerts), neue ausgangsverbindung hierfuer sowie verfahren zu dessen herstellung
EP0554020B1 (en) * 1992-01-24 1997-04-09 Sumitomo Electric Industries, Limited Silicon nitride powder and method for its manufacture
JP3314554B2 (ja) * 1993-12-10 2002-08-12 宇部興産株式会社 窒化珪素粉末及び窒化珪素含有水系スラリー
DE19651731B4 (de) * 1995-12-12 2012-08-16 Ube Industries, Ltd. Verfahren zur Herstellung einer Stickstoff enthaltenden Silanverbindung
US6264908B1 (en) 1997-12-04 2001-07-24 Thomas C. Maganas Methods and systems for the catalytic formation of silicon nitride using a fluidized bed of silica
JP2003166060A (ja) * 2001-11-30 2003-06-13 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude Ｃｖｄ法によるシリコン窒化物膜、シリコンオキシ窒化物膜、またはシリコン酸化物膜の製造方法
JP4607637B2 (ja) * 2005-03-28 2011-01-05 東京エレクトロン株式会社 シリコン窒化膜の形成方法、シリコン窒化膜の形成装置及びプログラム
US8318966B2 (en) * 2006-06-23 2012-11-27 Praxair Technology, Inc. Organometallic compounds
DE102008062177A1 (de) 2008-12-13 2010-07-08 Alzchem Trostberg Gmbh Verfahren zur Herstellung von hochreinem Siliciumnitrid
EP2415708B1 (en) 2009-03-30 2017-12-20 Ube Industries, Ltd. Nitrogen-containing silane compound powder and method for producing same
EP3020686A4 (en) * 2013-07-11 2017-03-29 UBE Industries, Ltd. Silicon nitride powder for mold release agent of casting mold for casting polycrystalline silicon ingot and method for manufacturing said silicon nitride powder, slurry containing said silicon nitride powder, casting mold for casting polycrystalline silicon ingot and method for manufacturing same, and method for manufacturing polycrystalline silicon ingot cast using said casting mold
CN115432676B (zh) * 2021-06-04 2024-03-26 中国科学院过程工程研究所 一种多级流化床制备高质量氮化硅粉体的系统及方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
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JPS54145400A (en) * 1978-05-08 1979-11-13 Ube Ind Ltd Production of metal nitride powder
JPS5595605A (en) * 1979-01-10 1980-07-21 Toyo Soda Mfg Co Ltd High purity silicon nitride and production thereof
JPS58213607A (ja) * 1982-06-07 1983-12-12 Shin Etsu Chem Co Ltd シリコンイミドおよび／または窒化けい素の製造方法
US4613490A (en) * 1984-05-08 1986-09-23 Mitsubishi Gas Chemical Company, Inc. Process for preparing silicon nitride, silicon carbide or fine powdery mixture thereof
JPS61174108A (ja) * 1985-01-25 1986-08-05 Toa Nenryo Kogyo Kk シリコンイミド又はポリシラザンの製造方法
JPS61287930A (ja) * 1985-06-17 1986-12-18 Chisso Corp ポリシラザンの製造方法
ATE54293T1 (de) * 1985-12-09 1990-07-15 Toa Nenryo Kogyo Kk Verfahren zur herstellung von siliciumimid und dessen weiterberarbeitung zu siliciumnitrid.
US4686095A (en) * 1985-12-23 1987-08-11 Ford Motor Company Method of making ultrapure silicon nitride precursor
US4795622A (en) * 1986-04-24 1989-01-03 Toa Nenryo Kogyo Kabushiki Kaisha Method for producing silicon-imide
JPS6339885A (ja) * 1986-08-06 1988-02-20 Toa Nenryo Kogyo Kk 窒化ケイ素前駆体および窒化ケイ素粉末の製造方法
JP2632816B2 (ja) * 1986-10-28 1997-07-23 東燃株式会社 窒化ケイ素の製造方法
US4772516A (en) * 1987-11-09 1988-09-20 Mahone Louis G Stable methylpolydisilylazane polymers

Also Published As

Publication number Publication date
ES2055503T3 (es) 1994-08-16
CA2052401A1 (en) 1992-04-03
JPH04265211A (ja) 1992-09-21
DE4031070A1 (de) 1992-04-09
EP0479050B1 (de) 1994-06-08
EP0479050A1 (de) 1992-04-08
DE59101851D1 (de) 1994-07-14
US5258169A (en) 1993-11-02

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