KR920000912B1 - 강자성 타겟의 분사를 위한 자전관 음극 - Google Patents

강자성 타겟의 분사를 위한 자전관 음극 Download PDF

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Publication number
KR920000912B1
KR920000912B1 KR1019840007653A KR840007653A KR920000912B1 KR 920000912 B1 KR920000912 B1 KR 920000912B1 KR 1019840007653 A KR1019840007653 A KR 1019840007653A KR 840007653 A KR840007653 A KR 840007653A KR 920000912 B1 KR920000912 B1 KR 920000912B1
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KR
South Korea
Prior art keywords
target
ferromagnetic
slits
magnetic
path
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019840007653A
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English (en)
Korean (ko)
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KR850005005A (ko
Inventor
뵐즈 피터
Original Assignee
레이볼드 앗크리엔 게젤샤프트
아이첼트, 오싱
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Application filed by 레이볼드 앗크리엔 게젤샤프트, 아이첼트, 오싱 filed Critical 레이볼드 앗크리엔 게젤샤프트
Publication of KR850005005A publication Critical patent/KR850005005A/ko
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Publication of KR920000912B1 publication Critical patent/KR920000912B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Microwave Tubes (AREA)
KR1019840007653A 1983-12-05 1984-12-04 강자성 타겟의 분사를 위한 자전관 음극 Expired KR920000912B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEP3343875.7 1983-12-05
DE3343875 1983-12-05

Publications (2)

Publication Number Publication Date
KR850005005A KR850005005A (ko) 1985-08-19
KR920000912B1 true KR920000912B1 (ko) 1992-01-31

Family

ID=6216048

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840007653A Expired KR920000912B1 (ko) 1983-12-05 1984-12-04 강자성 타겟의 분사를 위한 자전관 음극

Country Status (6)

Country Link
US (1) US4601806A (enExample)
EP (1) EP0144838B1 (enExample)
JP (1) JPS60193236A (enExample)
KR (1) KR920000912B1 (enExample)
AT (1) ATE47253T1 (enExample)
DE (1) DE3480145D1 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6274073A (ja) * 1985-09-26 1987-04-04 Hitachi Ltd スパツタ装置
DE3601439C1 (de) * 1986-01-20 1987-04-09 Glyco Metall Werke Schichtverbundwerkstoff,insbesondere fuer Gleit- und Reibelemente,sowie Verfahren zu seiner Herstellung
DE3619194A1 (de) * 1986-06-06 1987-12-10 Leybold Heraeus Gmbh & Co Kg Magnetron-zerstaeubungskatode fuer vakuum-beschichtungsanlagen
DE3624150C2 (de) * 1986-07-17 1994-02-24 Leybold Ag Zerstäubungskatode nach dem Magnetronprinzip
US4885074A (en) * 1987-02-24 1989-12-05 International Business Machines Corporation Plasma reactor having segmented electrodes
DE3852430T2 (de) * 1987-06-16 1995-05-04 Hitachi Ltd Magnetron-Zerstäubungsgerät und Verfahren zur Anwendung desselben zur Schichtenherstellung.
DE3727901A1 (de) * 1987-08-21 1989-03-02 Leybold Ag Zerstaeubungskathode nach dem magnetronprinzip
US4892633A (en) * 1988-11-14 1990-01-09 Vac-Tec Systems, Inc. Magnetron sputtering cathode
US4865708A (en) * 1988-11-14 1989-09-12 Vac-Tec Systems, Inc. Magnetron sputtering cathode
JPH0774439B2 (ja) * 1989-01-30 1995-08-09 三菱化学株式会社 マグネトロンスパッタ装置
DE3929695C2 (de) * 1989-09-07 1996-12-19 Leybold Ag Vorrichtung zum Beschichten eines Substrats
GB2241710A (en) * 1990-02-16 1991-09-11 Ion Tech Ltd Magnetron sputtering of magnetic materials in which magnets are unbalanced
DE4038497C1 (enExample) * 1990-12-03 1992-02-20 Leybold Ag, 6450 Hanau, De
DE4120690A1 (de) * 1991-06-22 1992-12-24 Leybold Ag Targetvorrichtung aus ferromagnetischem material fuer eine magnetron-elektrode
DE4136951C2 (de) * 1991-11-11 1996-07-11 Leybold Ag Vorrichtung zur Beschichtung von Substraten für Kathodenzerstäubungsanlagen
US5262028A (en) * 1992-06-01 1993-11-16 Sierra Applied Sciences, Inc. Planar magnetron sputtering magnet assembly
DE4304581A1 (de) * 1993-02-16 1994-08-18 Leybold Ag Vorrichtung zum Beschichten eines Substrats
DE19819933A1 (de) * 1998-05-05 1999-11-11 Leybold Systems Gmbh Target für eine Kathodenzerstäubungsvorrichtung zur Herstellung dünner Schichten
US6183614B1 (en) 1999-02-12 2001-02-06 Applied Materials, Inc. Rotating sputter magnetron assembly
US6290825B1 (en) * 1999-02-12 2001-09-18 Applied Materials, Inc. High-density plasma source for ionized metal deposition
US6497802B2 (en) 1999-02-12 2002-12-24 Applied Materials, Inc. Self ionized plasma sputtering
US6306265B1 (en) * 1999-02-12 2001-10-23 Applied Materials, Inc. High-density plasma for ionized metal deposition capable of exciting a plasma wave
EP1336985A1 (de) * 2002-02-19 2003-08-20 Singulus Technologies AG Zerstäubungskathode und Vorrichtung und Verfahren zum Beschichten eines Substrates mit mehreren Schichten
US20080067058A1 (en) * 2006-09-15 2008-03-20 Stimson Bradley O Monolithic target for flat panel application
KR20100040855A (ko) * 2007-06-15 2010-04-21 오씨 외를리콘 발처스 악티엔게젤샤프트 멀티타겟 스퍼터 소스 및 다층 증착 방법
KR20140138665A (ko) * 2012-03-29 2014-12-04 도레이 카부시키가이샤 진공 성막 장치 및 진공 성막 방법
US9928997B2 (en) * 2014-12-14 2018-03-27 Applied Materials, Inc. Apparatus for PVD dielectric deposition

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4198283A (en) * 1978-11-06 1980-04-15 Materials Research Corporation Magnetron sputtering target and cathode assembly
US4299678A (en) * 1979-07-23 1981-11-10 Spin Physics, Inc. Magnetic target plate for use in magnetron sputtering of magnetic films
GB2110719B (en) * 1981-11-30 1985-10-30 Anelva Corp Sputtering apparatus
US4431505A (en) * 1982-08-16 1984-02-14 Vac-Tec Systems, Inc. High rate magnetron sputtering of high permeability materials
US4391697A (en) * 1982-08-16 1983-07-05 Vac-Tec Systems, Inc. High rate magnetron sputtering of high permeability materials
US4414086A (en) * 1982-11-05 1983-11-08 Varian Associates, Inc. Magnetic targets for use in sputter coating apparatus

Also Published As

Publication number Publication date
EP0144838A2 (de) 1985-06-19
KR850005005A (ko) 1985-08-19
ATE47253T1 (de) 1989-10-15
US4601806A (en) 1986-07-22
JPS60193236A (ja) 1985-10-01
EP0144838A3 (en) 1986-07-30
DE3480145D1 (en) 1989-11-16
EP0144838B1 (de) 1989-10-11
JPH0558210B2 (enExample) 1993-08-26

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