KR910019116A - Oxynitration LOCOS Isolation Cell Manufacturing Method - Google Patents

Oxynitration LOCOS Isolation Cell Manufacturing Method Download PDF

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Publication number
KR910019116A
KR910019116A KR1019900006141A KR900006141A KR910019116A KR 910019116 A KR910019116 A KR 910019116A KR 1019900006141 A KR1019900006141 A KR 1019900006141A KR 900006141 A KR900006141 A KR 900006141A KR 910019116 A KR910019116 A KR 910019116A
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KR
South Korea
Prior art keywords
film
cell manufacturing
isolation cell
locos isolation
oxynitration
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KR1019900006141A
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Korean (ko)
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KR920008399B1 (en
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라사균
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문정환
금성일렉트론 주식회사
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Priority to KR1019900006141A priority Critical patent/KR920008399B1/en
Publication of KR910019116A publication Critical patent/KR910019116A/en
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Publication of KR920008399B1 publication Critical patent/KR920008399B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

내용 없음No content

Description

옥시나이트리데이션 LOCOS 아이솔레이션 셀 제조방법Oxynitration LOCOS Isolation Cell Manufacturing Method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도 (가)∼(사)는 본 발명에 따른 LOCLS 아이솔레이션 셀 제조공정도.Figure 2 (a) to (g) is a LOCLS isolation cell manufacturing process diagram according to the present invention.

Claims (1)

반도체 제조공정에서 필드 옥사이드 형성공정시 실리콘 서브스트레이트(1)위에 일정한 두께의 베이스 옥사이드(3)를 형성한후 고온 옥시데이션 공정중 야기되는 고진성 나이트 라이드 스트레스를 방지하기 위해 고온 단시간 나이트리데이션하여 옥시나이트 라이드막(9)을 형성하는 공정과, 상기 옥시나이트 라이드막(9) 위에 나이트 라이드막(4)을 디포지션한 다음 포토레지스트(5)로 액티브 마스크를 덮어 나이트 라이드막(4)을 에치한 후 포토레지스트(5)를 벗기고 필드옥시데이션하여 필드옥사이드(10)를 형성한 후 나이트라이드막(4)과 베이스 옥사이드막(3)을 제거하는 공정을 포함하는 것을 특징으로 하는 옥시나이트리데이션 LOCOS 아이솔레이션 셀 제조방법.After forming the base oxide (3) of a certain thickness on the silicon substrate (1) during the field oxide formation process in the semiconductor manufacturing process, and then high temperature short time nitriding to prevent high-intrinsic nitride stress caused during the high temperature oxidization process Forming an oxynitride film (9), depositing a nitride film (4) on the oxynitride film (9), and then covering the active mask with a photoresist (5) to cover the nitride film (4) After etching, the photoresist 5 is stripped and field oxidized to form the field oxide 10, followed by removing the nitride film 4 and the base oxide film 3. Dation LOCOS isolation cell manufacturing method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900006141A 1990-04-30 1990-04-30 Manufacturing method of oxynitridation locos isolation cell KR920008399B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900006141A KR920008399B1 (en) 1990-04-30 1990-04-30 Manufacturing method of oxynitridation locos isolation cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900006141A KR920008399B1 (en) 1990-04-30 1990-04-30 Manufacturing method of oxynitridation locos isolation cell

Publications (2)

Publication Number Publication Date
KR910019116A true KR910019116A (en) 1991-11-30
KR920008399B1 KR920008399B1 (en) 1992-09-28

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KR1019900006141A KR920008399B1 (en) 1990-04-30 1990-04-30 Manufacturing method of oxynitridation locos isolation cell

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Publication number Publication date
KR920008399B1 (en) 1992-09-28

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