KR950021393A

KR950021393A - Separator Formation Method of Semiconductor Device

Info

Publication number: KR950021393A
Application number: KR1019930030843A
Authority: KR
Inventors: 양홍선
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1993-12-29
Filing date: 1993-12-29
Publication date: 1995-07-26

Abstract

본 발명은 반도체 소자의 분리막 형성방법에 관한 것으로, 특히 실리콘기판(1)을 산화시켜 패드산화막(2)을 형성하고, 상부에 실리콘막(3), 제1질화막 (4)을 형성하는 단계; 선택적 이온주입 및 확산공정을 통해 N-웰 및 P-웰을 형성하는 단계; 상기 제1질화막(4) 상부에 제2질화막(40)을 형성하는 단계; 필드영역의 상기 제2, 제1질화막(40,4)을 제거하는 단계; 및 필드산화막(9)을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 함으로써 본 발명은 기존 로코스(LOCOS)공정이외는 불가능했던 ISO 패턴 형성 후 웰을 형성하는 공정을 다결정실리콘막을 이용한 완충 로코스 구조에 적용가능하게 됨으로써 기존 로코스 구조보다 버즈빅 형상의 길이는 감소시키면서도 공정을 대폭 줄일 수 있는 효과를 얻을 수 있다.The present invention relates to a method of forming a separator of a semiconductor device, and in particular, forming a pad oxide film (2) by oxidizing a silicon substrate (1), and forming a silicon film (3) and a first nitride film (4) thereon; Forming N-wells and P-wells through selective ion implantation and diffusion processes; Forming a second nitride film 40 on the first nitride film 4; Removing the second and first nitride films 40 and 4 in the field region; And forming a field oxide film 9, and the present invention provides a buffered locos structure using a polysilicon film to form a well after forming an ISO pattern, which was impossible except for a conventional LOCOS process. By being applicable to the present invention, it is possible to obtain an effect of significantly reducing the process while reducing the length of the Buzz Big shape than the existing Locos structure.

Description

Separator Formation Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1A도 내지 제1G도는 본 발명에 따른 필드산화막 형성 공정 단면도이다.1A to 1G are cross-sectional views of a field oxide film forming process according to the present invention.

Claims

In the method of forming a separator of a semiconductor device for isolation and isolation between devices, a silicon oxide substrate 1 is oxidized to form a pad oxide film 2 and a silicon film 3 and a first nitride film 4 formed thereon. step; Forming N-wells and P-wells through selective ion implantation and diffusion processes; Forming a second nitride film 40 on the first nitride film 4; Removing the second and first nitride films 40 and 4 in the field region; And forming a field oxide film (9).

2. The method of claim 1, wherein the first nitride film (4) is formed at a thickness of 300 to 500 kPa and the second nitride film (40) is formed at a thickness of 1000 to 2000 kPa.

※ Note: This is to be disclosed based on the first application.