KR910016960A - 금속등의 상이한 재료로 기초재를 피복하는 장치 - Google Patents

금속등의 상이한 재료로 기초재를 피복하는 장치 Download PDF

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Publication number
KR910016960A
KR910016960A KR1019910003276A KR910003276A KR910016960A KR 910016960 A KR910016960 A KR 910016960A KR 1019910003276 A KR1019910003276 A KR 1019910003276A KR 910003276 A KR910003276 A KR 910003276A KR 910016960 A KR910016960 A KR 910016960A
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KR
South Korea
Prior art keywords
base material
target
metal
different materials
targets
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KR1019910003276A
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English (en)
Inventor
스탕 볼프강
Original Assignee
페텔 솜멜캄프, 에리히 투테
레이볼드 앗크티엔게젤샤프트
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Application filed by 페텔 솜멜캄프, 에리히 투테, 레이볼드 앗크티엔게젤샤프트 filed Critical 페텔 솜멜캄프, 에리히 투테
Publication of KR910016960A publication Critical patent/KR910016960A/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

내용 없음

Description

금속등의 상이한 재로로 기초재를 피복하는 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
도면은 본 발명의 직류 스퍼터링용 두개의 타깃을 구비한 스퍼터링 장치에 대한 종 단면도.

Claims (2)

  1. 직류전원(10)(10a)들은 비어있는 코우팅 처리실(15)(15a)에 배치되어 있는 전극(5)(5a)들과 접속되고, 이 전극(5)(5a)들은 스퍼터(Sputter)가 되는 타깃(3)(3a)들과 전기적으로 접속되며, 스퍼터(Sputter)가 되는 타깃(3)(3a)의 입자는 기초재(1)위에 퇴적이되고, 프로세스 가스는 코우팅 처리실(15)(15a)로 도입될 수 있는 것을 포함하며, 스퍼터(Sputter)가 되는 복수의 물질로 만들어진 각 타깃(3)(3a)들은 기초재(1)의 표면에 대해서 각(角),′에서 유지되며, 이렇게 하여 타깃(3)(3a)쪽으로 향하는 입자들이 퍼지는 주된 방향(ℓ,ℓ′)은 포인트(S)에서 교차함을 특징으로 하는 금속등의 상이한 재료로 기초재를 피복하는 장치.
  2. 제1항에 있어서, 복수의 타깃(3)(3a),…들은 원형의 아아크상에 등거리로 배치되며, 각 타깃(3)(3a)은 기초재(1)의 표면에 대해서 각각,′로 유지되며, 이렇게 하여 타깃(3)(3a)으로 향하는 입자들이 퍼지는 주된 방향은 포인트(S)에서 교차함을 특징으로 하는 금속등의 상이한 재료로 기초재를 피복하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910003276A 1990-03-31 1991-02-28 금속등의 상이한 재료로 기초재를 피복하는 장치 KR910016960A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEP4010495.8 1990-03-31
DE4010495A DE4010495C2 (de) 1990-03-31 1990-03-31 Vorrichtung zum Beschichten eines Substrats mit Werkstoffen, beispielweise mit Metallen

Publications (1)

Publication Number Publication Date
KR910016960A true KR910016960A (ko) 1991-11-05

Family

ID=6403540

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910003276A KR910016960A (ko) 1990-03-31 1991-02-28 금속등의 상이한 재료로 기초재를 피복하는 장치

Country Status (4)

Country Link
EP (1) EP0450163A1 (ko)
JP (1) JPH04228564A (ko)
KR (1) KR910016960A (ko)
DE (1) DE4010495C2 (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100329630B1 (ko) * 1998-06-08 2002-08-21 한전건 고속전도성세라믹/금속복합재료코팅방법
CN102453874A (zh) * 2010-10-27 2012-05-16 Ace技术株式会社 对rf设备进行镀金属的方法以及用于该方法的溅镀装置

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EP0608478A3 (en) * 1992-01-29 1994-09-14 Leybold Ag Device for cathodic sputtering.
DE9217937U1 (ko) * 1992-01-29 1993-04-01 Leybold Ag, 6450 Hanau, De
DE4202425C2 (de) * 1992-01-29 1997-07-17 Leybold Ag Verfahren und Vorrichtung zum Beschichten eines Substrats, insbesondere mit elektrisch nichtleitenden Schichten
DE4419167B4 (de) * 1994-06-01 2004-09-02 Leybold Optics Gmbh Vorrichtung zum Beschichten eines Substrates
DE4420951C2 (de) * 1994-06-16 1998-01-22 Leybold Ag Einrichtung zum Erfassen von Mikroüberschlägen in Zerstäubungsanlagen
DE4441206C2 (de) * 1994-11-19 1996-09-26 Leybold Ag Einrichtung für die Unterdrückung von Überschlägen in Kathoden-Zerstäubungseinrichtungen
DE19501804A1 (de) 1995-01-21 1996-07-25 Leybold Ag Vorrichtung zur Beschichtung von Substraten
DE19506513C2 (de) * 1995-02-24 1996-12-05 Fraunhofer Ges Forschung Einrichtung zur reaktiven Beschichtung
DE19508405A1 (de) * 1995-03-09 1996-09-12 Leybold Ag Kathodenanordnung für eine Vorrichtung zum Zerstäuben von einem Target-Paar
DE19508406A1 (de) * 1995-03-09 1996-09-12 Leybold Ag Kathodenanordnung für eine Vorrichtung zum Zerstäuben eines Target-Paares
US5683560A (en) * 1995-07-08 1997-11-04 Balzers Und Leybold Deutschland Holding Ag Cathode assembly
DE19617057C2 (de) * 1996-04-29 1998-07-23 Ardenne Anlagentech Gmbh Sputteranlage mit zwei längserstreckten Magnetrons
US6264804B1 (en) 2000-04-12 2001-07-24 Ske Technology Corp. System and method for handling and masking a substrate in a sputter deposition system
DE10145201C1 (de) * 2001-09-13 2002-11-21 Fraunhofer Ges Forschung Einrichtung zum Beschichten von Substraten mit gekrümmter Oberfläche durch Pulsmagnetron-Zerstäuben
DE10145050C1 (de) * 2001-09-13 2002-11-21 Fraunhofer Ges Forschung Einrichtung zum Beschichten von Substraten mit gekrümmter Oberfläche durch Pulsmagnetron- Zerstäuben
JP4755475B2 (ja) * 2005-10-06 2011-08-24 株式会社昭和真空 スパッタ装置
JP2010001565A (ja) * 2008-05-20 2010-01-07 Canon Anelva Corp スパッタリング装置、それを用いた太陽電池及び画像表示装置の製造方法
WO2010125002A1 (en) * 2009-04-27 2010-11-04 Oc Oerlikon Balzers Ag Reactive sputtering with multiple sputter sources
WO2016202468A1 (de) 2015-06-16 2016-12-22 Schneider Gmbh & Co. Kg Vorrichtung, verfahren und verwendung zur beschichtung von linsen
DE102016125273A1 (de) 2016-12-14 2018-06-14 Schneider Gmbh & Co. Kg Anlage, Verfahren und Träger zur Beschichtung von Brillengläsern
CN111445489B (zh) * 2019-11-18 2020-10-13 北京邮电大学 一种离子束入射角度确定方法及装置

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DE2636293A1 (de) * 1976-08-12 1978-02-16 Leybold Heraeus Gmbh & Co Kg Katodenzerstaeubungsvorrichtung
US4313815A (en) * 1978-04-07 1982-02-02 Varian Associates, Inc. Sputter-coating system, and vaccuum valve, transport, and sputter source array arrangements therefor
DE2932483A1 (de) * 1979-08-10 1981-04-02 Leybold-Heraeus GmbH, 5000 Köln Testglashalter mit einer drehbaren platine und mehreren ausnehmungen fuer testglaeser
CH662188A5 (de) * 1983-03-16 1987-09-15 Satis Vacuum Ag Verfahren und einrichtung zur beschichtung optischer substrate mit reversiblen photochromischen eigenschaften.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100329630B1 (ko) * 1998-06-08 2002-08-21 한전건 고속전도성세라믹/금속복합재료코팅방법
CN102453874A (zh) * 2010-10-27 2012-05-16 Ace技术株式会社 对rf设备进行镀金属的方法以及用于该方法的溅镀装置

Also Published As

Publication number Publication date
JPH04228564A (ja) 1992-08-18
EP0450163A1 (de) 1991-10-09
DE4010495A1 (de) 1991-10-02
DE4010495C2 (de) 1997-07-31

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