KR890002970A - 전자기 수퍼터(suptter) 코팅장치 - Google Patents

전자기 수퍼터(suptter) 코팅장치 Download PDF

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Publication number
KR890002970A
KR890002970A KR1019880008074A KR880008074A KR890002970A KR 890002970 A KR890002970 A KR 890002970A KR 1019880008074 A KR1019880008074 A KR 1019880008074A KR 880008074 A KR880008074 A KR 880008074A KR 890002970 A KR890002970 A KR 890002970A
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South Korea
Prior art keywords
groove
electromagnetic device
width
electromagnetic
given operation
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KR1019880008074A
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English (en)
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KR920002464B1 (ko
Inventor
어니스트 디머레이 리차아드
브래드포오드 크럼리 게어리
Original Assignee
더 비이오우시이 그루우프 인코포레이팃드
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Application filed by 더 비이오우시이 그루우프 인코포레이팃드 filed Critical 더 비이오우시이 그루우프 인코포레이팃드
Publication of KR890002970A publication Critical patent/KR890002970A/ko
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Publication of KR920002464B1 publication Critical patent/KR920002464B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H01L21/203—

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

내용 없음

Description

전자기 스퍼터(sputter) 코팅장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 2 도는 이 발명에 따른 전자기 스퍼터링 장치의 단면도; 제 3 도는 여러 치수들을 표시하는 스퍼터링 타게트의 부분 단면도.

Claims (10)

  1. 스퍼터될 물질로 구성되는 타케트, 작동시 침식되는 상기 타케트 면상의 지역과 인접한 곳에 글로우 방전을 제한할 수 있는 자기 터널을 형성하도록 상기 타케트에서 나오고 그로 복귀하는 자속선들이 있는 자장을 발생하는 자기 수단; 및 상기 자기 터널을 따라 상기 침식 지역부위에 걸쳐 뻗어 있고, 실질적인 양의 물질이 기판상에 침착되게 하는 침식 지역의 홈; 으로 구성되는 전자기 스퍼터 코팅장치.
  2. 제 1 항에 있어서 상기 홈의 깊이가 소정 작동시 암흑부 치수 주변보다 더 큰 전자기 장치.
  3. 제 1 항에 있어서, 상기 홈의 너비가 약 0.025 (0.064cm) 보다 더 크고, 약 0.125(0.318cm)보다 더 작은 전자기 장치.
  4. 제 3 항에 있어서, 상기 홈의 너비가 소정 작동시 암흑부 치수 주변보다 더 작은 전자기 장치.
  5. 제 3 항에 있어서 상기 홈의 폭이 소정 작동시 암흑부 치수 주변보다 더 큰 전자기 장치.
  6. 제 1 항에 있어서, 상기 홈은 연속적인 고리인 전자기 장치.
  7. 제 6 항에 있어서, 상기 침식 지역은 원통형 계단의 내면과 윗면으로 구성되고, 상기 홈은 2개 면돌이 만나는 곳 근처에 위치되는 전자기 장치.
  8. 제 7 항에 있어서, 상기 홈의 폭이 약 0.025(0.064cm)보다 더 크고, 약 0.125(0.318cm)보다 더 작은 전자기 장치.
  9. 제 7 항에 있어서, 상기 홈의 폭이 소정 작동시 암흑부 치수 주변보다 더 작은 전자기 장치.
  10. 제 7 항에 있어서, 상기 홈의 폭이 소정 작동시 암흑부 치수 주변보다 더 큰 전자기 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880008074A 1987-07-01 1988-06-30 마그네트론 스퍼터 코팅장치 KR920002464B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US7/068,869 1987-07-01
US068869 1987-07-01
US07/068,869 US4834860A (en) 1987-07-01 1987-07-01 Magnetron sputtering targets

Publications (2)

Publication Number Publication Date
KR890002970A true KR890002970A (ko) 1989-04-12
KR920002464B1 KR920002464B1 (ko) 1992-03-24

Family

ID=22085235

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880008074A KR920002464B1 (ko) 1987-07-01 1988-06-30 마그네트론 스퍼터 코팅장치

Country Status (6)

Country Link
US (1) US4834860A (ko)
EP (1) EP0297779A3 (ko)
JP (1) JPH01104772A (ko)
KR (1) KR920002464B1 (ko)
AU (1) AU591048B2 (ko)
CA (1) CA1323856C (ko)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4957605A (en) * 1989-04-17 1990-09-18 Materials Research Corporation Method and apparatus for sputter coating stepped wafers
AU8629491A (en) * 1990-08-30 1992-03-30 Materials Research Corporation Pretextured cathode sputtering target and method of preparation thereof and sputtering therewith
DE4123274C2 (de) * 1991-07-13 1996-12-19 Leybold Ag Vorrichtung zum Beschichten von Bauteilen bzw. Formteilen durch Kathodenzerstäubung
US5407551A (en) * 1993-07-13 1995-04-18 The Boc Group, Inc. Planar magnetron sputtering apparatus
US5378341A (en) * 1993-10-13 1995-01-03 The United States Of America As Represented By The Secretary Of The Air Force Conical magnetron sputter source
US5597459A (en) * 1995-02-08 1997-01-28 Nobler Technologies, Inc. Magnetron cathode sputtering method and apparatus
JPH09228038A (ja) * 1996-02-23 1997-09-02 Balzers Prozes Syst Gmbh 中空のターゲットを備えた、陰極スパッタによりサブストレートを被覆するための装置
DE19609248A1 (de) * 1996-02-23 1997-08-28 Balzers Prozes Systeme Gmbh Vorrichtung zum Beschichten von Substraten mittels Kathodenzerstäubung mit einem Hohltarget
US5716505A (en) * 1996-02-23 1998-02-10 Balzers Prozess-Systems Gmbh Apparatus for coating substrates by cathode sputtering with a hollow target
DE19609249A1 (de) * 1996-02-23 1997-08-28 Balzers Prozes Systeme Gmbh Vorrichtung zum Beschichten von Substraten mittels Kathodenzerstäubung mit einem Hohltarget
DE19614595A1 (de) * 1996-04-13 1997-10-16 Singulus Technologies Gmbh Vorrichtung zur Kathodenzerstäubung
DE19614599A1 (de) * 1996-04-13 1997-10-16 Singulus Technologies Gmbh Vorrichtung zur Kathodenzerstäubung
DE19614598A1 (de) * 1996-04-13 1997-10-16 Singulus Technologies Gmbh Vorrichtung zur Kathodenzerstäubung
US5863399A (en) * 1996-04-13 1999-01-26 Singulus Technologies Gmbh Device for cathode sputtering
JP3460506B2 (ja) * 1996-11-01 2003-10-27 三菱マテリアル株式会社 高誘電体膜形成用スパッタリングターゲット
US5827414A (en) * 1997-07-25 1998-10-27 International Business Machines Corporation Single piece slotted ferromagnetic sputtering target and sputtering apparatus
DE19734633C2 (de) * 1997-08-11 1999-08-26 Forschungszentrum Juelich Gmbh Hochdruck-Magnetron-Kathode
US6117281A (en) * 1998-01-08 2000-09-12 Seagate Technology, Inc. Magnetron sputtering target for reduced contamination
US6287435B1 (en) 1998-05-06 2001-09-11 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6551470B1 (en) * 1999-06-15 2003-04-22 Academy Precision Materials Clamp and target assembly
JP3749178B2 (ja) * 1999-11-18 2006-02-22 東京エレクトロン株式会社 切頭円錐形スパッタリングターゲットのためのターゲット利用率の高い磁気構成
US6299740B1 (en) 2000-01-19 2001-10-09 Veeco Instrument, Inc. Sputtering assembly and target therefor
WO2006084001A1 (en) * 2005-02-02 2006-08-10 Tosoh Smd, Inc. Sputter targets with expansion grooves for reduced separation
US7772543B2 (en) * 2005-01-12 2010-08-10 New York University System and method for processing nanowires with holographic optical tweezers

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US4219397A (en) * 1978-11-24 1980-08-26 Clarke Peter J Magnetron sputter apparatus
US4299678A (en) * 1979-07-23 1981-11-10 Spin Physics, Inc. Magnetic target plate for use in magnetron sputtering of magnetic films
US4324631A (en) * 1979-07-23 1982-04-13 Spin Physics, Inc. Magnetron sputtering of magnetic materials
JPS5976875A (ja) * 1982-10-22 1984-05-02 Hitachi Ltd マグネトロン型スパッタ装置とそれに用いるターゲット
US4414086A (en) * 1982-11-05 1983-11-08 Varian Associates, Inc. Magnetic targets for use in sputter coating apparatus
US4414087A (en) * 1983-01-31 1983-11-08 Meckel Benjamin B Magnetically-assisted sputtering method for producing vertical recording media
US4487675A (en) * 1983-01-31 1984-12-11 Meckel Benjamin B Magnetically-assisted sputtering method for producing vertical recording media
US4417968A (en) * 1983-03-21 1983-11-29 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus
US4443318A (en) * 1983-08-17 1984-04-17 Shatterproof Glass Corporation Cathodic sputtering apparatus
JPH0627323B2 (ja) * 1983-12-26 1994-04-13 株式会社日立製作所 スパツタリング方法及びその装置
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Also Published As

Publication number Publication date
AU591048B2 (en) 1989-11-23
US4834860A (en) 1989-05-30
JPH01104772A (ja) 1989-04-21
KR920002464B1 (ko) 1992-03-24
EP0297779A3 (en) 1990-05-09
EP0297779A2 (en) 1989-01-04
AU1767788A (en) 1989-01-19
CA1323856C (en) 1993-11-02

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