KR910013602A - How to prevent deterioration of high temperature superconductor - Google Patents

How to prevent deterioration of high temperature superconductor Download PDF

Info

Publication number
KR910013602A
KR910013602A KR1019890018687A KR890018687A KR910013602A KR 910013602 A KR910013602 A KR 910013602A KR 1019890018687 A KR1019890018687 A KR 1019890018687A KR 890018687 A KR890018687 A KR 890018687A KR 910013602 A KR910013602 A KR 910013602A
Authority
KR
South Korea
Prior art keywords
high temperature
temperature superconductor
prevent deterioration
ceramic material
oxide
Prior art date
Application number
KR1019890018687A
Other languages
Korean (ko)
Other versions
KR920004030B1 (en
Inventor
한택상
염상섭
최상삼
Original Assignee
박원희
한국과학기술연구원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 박원희, 한국과학기술연구원 filed Critical 박원희
Priority to KR1019890018687A priority Critical patent/KR920004030B1/en
Publication of KR910013602A publication Critical patent/KR910013602A/en
Application granted granted Critical
Publication of KR920004030B1 publication Critical patent/KR920004030B1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices

Abstract

내용 없음.No content.

Description

고온 초전도체의 열화(劣化) 방지방법How to prevent deterioration of high temperature superconductor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 산화물 고온 초전도체 벌크를 세라믹재료로 피복하는 과정도,1 is a process of coating an oxide high temperature superconductor bulk with a ceramic material,

제2도는 산화물 고온 초전도체 박막으로 만든 초전도 소자를 상기 세라믹 재료로 피복하는 과정도,2 is a process of coating a superconducting device made of an oxide high temperature superconductor thin film with the ceramic material,

제3도는 질화규소로 피복했을 때와 피복하지 않았을 때의 수분 처리 시간에 따른 임계 전류 밀도의 변화를 나타낸 도면으로, 피복한 초전도체에서 현저한 수분침투 방지 효과가 있음을 보여줌.FIG. 3 is a diagram showing the change of the critical current density according to the moisture treatment time with and without silicon nitride coating, showing that the coated superconductor has a significant moisture penetration prevention effect.

Claims (2)

산화물 고온 초전도체 벌크 또는 박막 초전도 소자를 통상의 플라즈마 화학증착법(PE-CVD)에 의하여 세라믹 재료로 피복함을 특징으로 하는 고온 초전도체의 열화 방지 방법.A method for preventing deterioration of a high temperature superconductor, characterized by coating an oxide high temperature superconductor bulk or thin film superconducting element with a ceramic material by conventional plasma chemical vapor deposition (PE-CVD). 제1항에 있어서, 세라믹 재료가 질화규소(Si3N4), 산화티타늄(TiO2), 산화규소(SiO2)중에서 선택됨을 특징으로 하는 고온 초전도에의 열화 방지 방법.The method of claim 1, wherein the ceramic material is selected from silicon nitride (Si 3 N 4 ), titanium oxide (TiO 2 ), and silicon oxide (SiO 2 ). ※ 참고사항 : 최초출된 내용에 의하여 공개하는 것임.※ Note: It is to be disclosed based on the original contents.
KR1019890018687A 1989-12-15 1989-12-15 Protecting method of deteriorating of high-temperature super-conductors KR920004030B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890018687A KR920004030B1 (en) 1989-12-15 1989-12-15 Protecting method of deteriorating of high-temperature super-conductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890018687A KR920004030B1 (en) 1989-12-15 1989-12-15 Protecting method of deteriorating of high-temperature super-conductors

Publications (2)

Publication Number Publication Date
KR910013602A true KR910013602A (en) 1991-08-08
KR920004030B1 KR920004030B1 (en) 1992-05-22

Family

ID=19292982

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890018687A KR920004030B1 (en) 1989-12-15 1989-12-15 Protecting method of deteriorating of high-temperature super-conductors

Country Status (1)

Country Link
KR (1) KR920004030B1 (en)

Also Published As

Publication number Publication date
KR920004030B1 (en) 1992-05-22

Similar Documents

Publication Publication Date Title
KR920001620A (en) Semiconductor device and manufacturing method thereof
KR900002316A (en) Manufacturing Method of Semiconductor Device
JPS64756A (en) Semiconductor device and capacitor device and manufacture thereof
KR890017776A (en) Metal Processing Process for Semiconductor Devices
KR900001612A (en) Chemical vapor deposition of bismuth oxide
KR910013602A (en) How to prevent deterioration of high temperature superconductor
KR860009482A (en) Semiconductor device having epitaxial insulating film and manufacturing method thereof
KR920022576A (en) Manufacturing method of high temperature superconducting thin film
KR910015005A (en) Semiconductor device manufacturing method
KR890010962A (en) Deposition Film for Capacitor
KR830006828A (en) Semiconductor devices
KR910013436A (en) Manufacturing method of semiconductor device
KR910017646A (en) Fabrication method of thin film FET transistor using plasma oxidation
JPS558036A (en) Electrode formation
KR930003245A (en) Delta-doped formation method by organometallic chemical vapor deposition of GaAs epitaxial layer grown on silicon substrate
KR930003450A (en) Manufacturing method of high temperature superconducting Josephson junction
KR890016643A (en) Metal thin film formation method of a semiconductor device
KR900007125A (en) Manufacturing Method of PbTiO₃ Thin Film by Chemical Vapor Deposition
KR920015652A (en) Method for manufacturing high temperature superconducting Josephson junction
KR920015439A (en) Metal contact manufacturing method of semiconductor device
KR910010633A (en) Manufacturing Method of Semiconductor Device
JPS57126183A (en) Josephson junction element
KR930015122A (en) Manufacturing method of ferroelectric thin film and thin film infrared sensor
KR890016693A (en) Manufacturing Method of InSb Thin Film for Hall Device
KR920015440A (en) Manufacturing method of semiconductor device

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 19961204

Year of fee payment: 6

LAPS Lapse due to unpaid annual fee