KR930015122A - Manufacturing method of ferroelectric thin film and thin film infrared sensor - Google Patents

Manufacturing method of ferroelectric thin film and thin film infrared sensor Download PDF

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Publication number
KR930015122A
KR930015122A KR1019910023898A KR910023898A KR930015122A KR 930015122 A KR930015122 A KR 930015122A KR 1019910023898 A KR1019910023898 A KR 1019910023898A KR 910023898 A KR910023898 A KR 910023898A KR 930015122 A KR930015122 A KR 930015122A
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KR
South Korea
Prior art keywords
thin film
pbtio
manufacturing
infrared sensor
ferroelectric
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KR1019910023898A
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Korean (ko)
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KR950001294B1 (en
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이돈희
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이헌조
주식회사 금성사
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Priority to KR1019910023898A priority Critical patent/KR950001294B1/en
Publication of KR930015122A publication Critical patent/KR930015122A/en
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Publication of KR950001294B1 publication Critical patent/KR950001294B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/46—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes silicones

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Physical Vapour Deposition (AREA)
  • Radiation Pyrometers (AREA)

Abstract

본 발명은 고주파 마그네트론 스피터링법을 이용하여 타겟으로 PbO가 5-20Wt% 과량첨가된 PbTiO3세라믹과, 증착온도 510-600℃, 스퍼터링가스로 Ar과 O2가 혼합된 가스를 사용하여 실리콘 또는 백금이 입혀진 실리콘 기판상에 상기 PbTiO3강유전체 박막을 형성하는 방법을 제공하는 것이다.According to the present invention, a PbTiO 3 ceramic having a PbO added in excess of 5-20 Wt% to a target using a high frequency magnetron sputtering method, a deposition temperature of 510-600 ° C., and a gas containing Ar and O 2 mixed with a sputtering gas or A method of forming the PbTiO 3 ferroelectric thin film on a platinum coated silicon substrate is provided.

Description

강유전체 박막의 제조방법 및 박막 적외선 센서Manufacturing method of ferroelectric thin film and thin film infrared sensor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명에 따라 실리콘 기판위에 증착된 PbTiO3박막 결정구조의 피크치를 나타낸 도면,1 is a view showing the peak value of the crystal structure of PbTiO 3 thin film deposited on a silicon substrate according to the present invention,

제2도는 본 발명에 의한 박막 적외선 센서의 구조를 나타낸 도면.2 is a view showing the structure of a thin film infrared sensor according to the present invention.

Claims (4)

고주파 마그네트론 스퍼터링 방법을 이용하여 타겟으로 PbO가 5-20Wt%과장 첨가된 PbTiO3세라믹과, 증착온도 510-600℃, 스피터링 가스로 Ar과 O2가 혼합된 가스를 사용하여 실리콘 또는 백금이 입혀진 실리콘기판상에 상기 가유전체 박막을 형성함을 특징으로 하는 강유전체 박막의 제조방법.PbTiO 3 ceramic with 5-20Wt% exaggerated PbO as a target using a high frequency magnetron sputtering method, and deposited with silicon or platinum using a gas containing Ar and O 2 mixed at a deposition temperature of 510-600 ° C and sputtering gas A method of manufacturing a ferroelectric thin film, characterized in that to form the thin film on the silicon substrate. 제1항에 있어서, 상기 스피터링 가스로 Ar과 O2의 혼합비는 8:2-9:1임을 특징으로 하는 강유전체의 박막제조방법.The method of claim 1, wherein the mixing ratio of Ar and O 2 as the sputtering gas is 8: 2-9: 1. 실리콘 기판위에 하부전극인 백금박막을 스피터링으로 형서완후 그 위에 강유전체 PbTiO3박막을 증착하는 수단과, 상기 PbTiO3박막 위에 적외선 흡수율이 높은 Ni-Cr 전극을 형성하는 수단과, 상기 PbTiO3박막 밑의 이면을 이방성에칭하여 셀리콘을 제거하는 수단으로 이루어짐을 특징으로 하는 박막 적외선센서.The PbTiO 3 films means that the lower electrode of a platinum thin film on a silicon substrate, depositing a ferroelectric PbTiO 3 thin film thereon and then form seowan the spigot sintering and, means for formation of the PbTiO 3 films Ni-Cr electrode with high infrared ray absorptivity over and, Thin film infrared sensor, characterized in that made of means for removing the silicon by anisotropic etching the bottom of the bottom. ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.※ Note: This is to be disclosed by the original application.
KR1019910023898A 1991-12-23 1991-12-23 Thin layer infrared ray sensor manufacturing method KR950001294B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910023898A KR950001294B1 (en) 1991-12-23 1991-12-23 Thin layer infrared ray sensor manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910023898A KR950001294B1 (en) 1991-12-23 1991-12-23 Thin layer infrared ray sensor manufacturing method

Publications (2)

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KR930015122A true KR930015122A (en) 1993-07-23
KR950001294B1 KR950001294B1 (en) 1995-02-15

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910023898A KR950001294B1 (en) 1991-12-23 1991-12-23 Thin layer infrared ray sensor manufacturing method

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KR (1) KR950001294B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100738112B1 (en) * 2006-04-28 2007-07-12 삼성전자주식회사 Method of manufacturing ferroelectric thin film for data storage and method of manufacturing ferroelectric recording media using the same method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100738112B1 (en) * 2006-04-28 2007-07-12 삼성전자주식회사 Method of manufacturing ferroelectric thin film for data storage and method of manufacturing ferroelectric recording media using the same method

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Publication number Publication date
KR950001294B1 (en) 1995-02-15

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