JPH0227614A - Laminated structure of oxide superconductive thin film - Google Patents
Laminated structure of oxide superconductive thin filmInfo
- Publication number
- JPH0227614A JPH0227614A JP63177544A JP17754488A JPH0227614A JP H0227614 A JPH0227614 A JP H0227614A JP 63177544 A JP63177544 A JP 63177544A JP 17754488 A JP17754488 A JP 17754488A JP H0227614 A JPH0227614 A JP H0227614A
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- thin film
- superconducting thin
- intermediate layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 34
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910001887 tin oxide Inorganic materials 0.000 claims abstract description 7
- 239000011521 glass Substances 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract description 12
- 239000011787 zinc oxide Substances 0.000 abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 abstract description 4
- 239000001301 oxygen Substances 0.000 abstract description 4
- 239000000463 material Substances 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 239000010408 film Substances 0.000 description 5
- 239000002887 superconductor Substances 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、酸化物超伝導体の薄膜（超伝導薄膜）の積層
構造に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a stacked structure of oxide superconductor thin films (superconducting thin films).
（従来の技術）
一般に、酸化物超伝導体にあっては、その優れた超伝導
特性を得る上で単結晶構造であることが好ましいことと
、単結晶構造である方が、エピタキシャル成長の促進に
優れていることから、基板上にエピタキシャル成長させ
てなる酸化物超伝導薄膜の構造のものが知られている。(Prior art) In general, for oxide superconductors, it is preferable to have a single crystal structure in order to obtain excellent superconducting properties, and a single crystal structure is better for promoting epitaxial growth. Due to its excellent properties, a structure of an oxide superconducting thin film formed by epitaxial growth on a substrate is known.
ところで、酸化物超伝導薄膜をエピタキシャル成長させ
るために用いられる基板の材料としては、超伝導体と同
じような結晶構造を持つチタン酸ストロンチウム（５ｒ
ＴｉＯｓ）とか酸化マグネシウム（ＭｇＯ）などがある
が、これらの基板材料は高価であるという問題があり、
量産には適していないといえる。By the way, the substrate material used for epitaxial growth of oxide superconducting thin films is strontium titanate (5r), which has a crystal structure similar to that of superconductors.
TiOs) and magnesium oxide (MgO), but these substrate materials have the problem of being expensive.
It can be said that it is not suitable for mass production.
一方、酸化物超伝導薄膜のエピタキシャル成長の基板材
料としては半導体技術分野で多用される安価なシリコン
系のものを用いることが考えられるが、単にシリコン系
基板の上に直接、酸化物超伝導薄膜をエピタキシャル成
長させたのでは、６゜０℃〜９００℃といった高温熱処
理過程において、その基板と酸化物超伝導薄膜との両者
間の線膨張率の相違による熱歪みの問題と、またその両
者間の化学反応による相互拡散が発生するなどの不具合
があって採用することができない。このことは、超伝導
薄膜が変色しているという外観上からも明らかである。On the other hand, it is conceivable to use an inexpensive silicon-based material that is often used in the semiconductor technology field as a substrate material for epitaxial growth of an oxide superconducting thin film, but it is possible to simply grow an oxide superconducting thin film directly on a silicon-based substrate. With epitaxial growth, there are problems of thermal distortion due to the difference in coefficient of linear expansion between the substrate and the oxide superconducting thin film during the high temperature heat treatment process of 6°0°C to 900°C, and chemical problems between the two. It cannot be used because of problems such as mutual diffusion due to reaction. This is also clear from the appearance that the superconducting thin film is discolored.
そこで、従来技術の１つとして、そのシリコン系基板上
に結晶性を問わない白金膜を中間層としてスパッタリン
グ法で形成し、その白金膜の上に酸化物超伝導薄膜をエ
ピタキシャル成長させることで前記熱歪みとか相互拡散
などの不具合のない安価な積層構造のものとした技術も
提案されている。Therefore, as one of the conventional techniques, a platinum film of any crystallinity is formed as an intermediate layer on the silicon substrate by sputtering, and an oxide superconducting thin film is epitaxially grown on the platinum film. Techniques have also been proposed that use an inexpensive laminated structure free from defects such as distortion and interdiffusion.
（発明が解決しようとする課題）
ところで、上記のような従来の酸化物超伝導薄膜の積層
構造にあっては、第１に中間層である白金膜は酸化物超
伝導薄膜に対する密着性に優れてはいるものの、シリコ
ン系基板に対する密着性に劣るという問題と、第２に白
金膜では安定した酸化物超伝導特性が得られないという
問題とがあることが判明した。(Problems to be Solved by the Invention) In the conventional laminated structure of oxide superconducting thin films as described above, firstly, the platinum film serving as the intermediate layer has excellent adhesion to the oxide superconducting thin film. However, it has been found that there are two problems: the adhesion to silicon-based substrates is poor, and the second problem is that stable oxide superconducting properties cannot be obtained with platinum films.
そこで、本発明者は上記問題点に鑑みて種々の検討を重
ねた結果、酸化インジウム・スズ（ＩＴＯ）、酸化スズ
、酸化亜鉛等の酸化物が酸化物超伝導薄膜のみならず基
板のいずれに対しても密着性に優れていること、かつそ
れらが酸素成分を含むことにより安定した超伝導特性が
得られるという事実を知見した。Therefore, as a result of various studies in view of the above problems, the present inventors found that oxides such as indium tin oxide (ITO), tin oxide, and zinc oxide can be used not only in oxide superconducting thin films but also in substrates. It was discovered that they have excellent adhesion to other materials, and that stable superconducting properties can be obtained because they contain an oxygen component.
本発明は、上記知見に基づいて上記課題を解決した安価
な酸化物超伝導薄膜の積層構造を提供することを目的と
している。An object of the present invention is to provide an inexpensive laminated structure of oxide superconducting thin films that solves the above problems based on the above findings.
（課題を解決するための手段）
このような目的を達成するために、本発明の酸化物超伝
導薄膜の積層構造においては、中間層をＩＴＯ，酸化ス
ズ、酸化亜鉛等のように、基板と酸化物超伝導薄膜との
いずれに対しても密着性に優れた酸化物で構成したこと
を特徴としている。(Means for Solving the Problems) In order to achieve such an object, in the laminated structure of the oxide superconducting thin film of the present invention, the intermediate layer is made of ITO, tin oxide, zinc oxide, etc., with the substrate. It is characterized by being made of an oxide that has excellent adhesion to both oxide superconducting thin films.
（作用）
中間層がｒＴＯ１酸化スズ、酸化亜鉛等の酸化物で構成
されているから、酸化物超伝導薄膜のみならず基板に対
してもその中間層が良好に密着し、かつ、その中間層を
構成する酸化物中の酸素成分により酸化物超伝導薄膜の
超伝導特性が安定化する。(Function) Since the intermediate layer is composed of oxides such as rTO1 tin oxide and zinc oxide, the intermediate layer adheres well not only to the oxide superconducting thin film but also to the substrate. The superconducting properties of the oxide superconducting thin film are stabilized by the oxygen component in the oxide that constitutes the oxide.
（実施例）
以下、本発明の実施例を図面を参照して詳細に説明する
。(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings.
第１図は本発明の実施例に係る酸化物超伝導薄膜の積層
構造の断面図である。第１図において、符号２はガラス
基板、４はガラス基板２の上に設けられたＩＴＯによる
中間層、６はその中間層４上にエピタキシャル成長され
たＹ−Ｂａ−Ｃｕ−０等の酸化物超伝導薄膜である。FIG. 1 is a cross-sectional view of a laminated structure of an oxide superconducting thin film according to an embodiment of the present invention. In FIG. 1, reference numeral 2 denotes a glass substrate, 4 an intermediate layer made of ITO provided on the glass substrate 2, and 6 an oxide superstructure such as Y-Ba-Cu-0 epitaxially grown on the intermediate layer 4. It is a conductive thin film.
上記構造の製造手順について説明する。まずガラス基板
２の上に透明導電性酸化物であるｆＴＯを、例えばガラ
ス基板２を３００℃の高温で加熱しながら真空蒸着法で
堆積する。次いで、これにより、膜厚３０００オングス
トロームで約８０％の可視光の透過率を有するＩＴＯの
中間層４を得る。その中間層４の上にＲＦマグネトロン
スパッター法でもって高温酸化物超伝導体であるＹ−Ｂ
ａ −Ｃｕ−０を積層させることで、酸化物超伝導薄膜
６が得られる。このとき、熱歪みの影響で超伝導膜にク
ラックが生じるという報告があるが、ガラス基板として
、酸化物超伝導体と同じ熱膨張率を持つソーダライムガ
ラスを用いるとクラックは全くみられなかった。The manufacturing procedure of the above structure will be explained. First, fTO, which is a transparent conductive oxide, is deposited on the glass substrate 2 by vacuum evaporation while heating the glass substrate 2 at a high temperature of 300° C., for example. This then yields an ITO intermediate layer 4 having a thickness of 3000 angstroms and a visible light transmittance of about 80%. A high temperature oxide superconductor Y-B is formed on the intermediate layer 4 by RF magnetron sputtering.
By stacking a-Cu-0, an oxide superconducting thin film 6 is obtained. At this time, there are reports that cracks occur in the superconducting film due to the effects of thermal strain, but when soda lime glass, which has the same coefficient of thermal expansion as the oxide superconductor, was used as the glass substrate, no cracks were observed at all. .
上記構造においては、中間層４がＩＴＯで構成されてい
るから、ガラス基板２と酸化物超伝導薄膜６とのいずれ
に対してもその中間層４が良好に密着させられ、かつ、
その酸素成分により酸化物超伝導薄膜６の超伝導特性が
安定化する。In the above structure, since the intermediate layer 4 is made of ITO, the intermediate layer 4 can be brought into good contact with both the glass substrate 2 and the oxide superconducting thin film 6, and
The oxygen component stabilizes the superconducting properties of the oxide superconducting thin film 6.
本実施例におけるＹ−Ｂａ−Ｃｕ−０／Ｉ Ｔｏ／ガラ
ス構造でＹ −Ｂ ａ −Ｃｕ −０の酸化物超伝導薄
膜もが超伝導転移した実例を第３図の電気抵抗変化曲線
に示す。第３図において縦軸は電気抵抗値、横軸は絶対
温度をそれぞれ示しているとともに、Ｔｅｌは熱伝導転
移の始まり、Ｔｃ２は熱伝導転移の終わりを示している
。An example of the superconducting transition of the Y-Ba-Cu-0 oxide superconducting thin film in the Y-Ba-Cu-0/I To/glass structure in this example is shown in the electrical resistance change curve in Figure 3. . In FIG. 3, the vertical axis indicates the electrical resistance value, and the horizontal axis indicates the absolute temperature, and Tel indicates the beginning of the thermal conduction transition, and Tc2 indicates the end of the thermal conduction transition.
また、中間層４として透明性を有するＩＴＯを用いたか
ら、酸化物超伝導薄膜６からの発光の検出が可能である
。Furthermore, since transparent ITO is used as the intermediate layer 4, it is possible to detect light emission from the oxide superconducting thin film 6.
なお、その酸化物超伝導薄膜６の上に第２図に示すよう
に、さらにＩＴＯでもって保護・中間層８を形成した場
合は、酸化物超伝導薄膜４からの発光は中間層４からも
保護・中間層８からのいずれからも検出可能となって、
この発光現象を利用して例えばこの酸化物超伝導薄膜の
積層構造を論理素子として用いることができる。また、
上記実施例では中間層４の材料としてＩＴＯを選定した
が、ＩＴＯではなく酸化スズ、酸化亜鉛等の他の酸化物
材料であってもよい。さらに、上記実施例では基板材料
としてそのガラスを用いたが、シリコン系とか鉄、ステ
ンレス等の他の材料で基板を構成してもよい。Note that if a protective/intermediate layer 8 is further formed using ITO on the oxide superconducting thin film 6 as shown in FIG. It can be detected from either the protection/intermediate layer 8,
By utilizing this light-emitting phenomenon, for example, the laminated structure of this oxide superconducting thin film can be used as a logic element. Also,
In the above embodiment, ITO was selected as the material for the intermediate layer 4, but other oxide materials such as tin oxide and zinc oxide may be used instead of ITO. Further, although glass is used as the substrate material in the above embodiments, the substrate may be made of other materials such as silicon, iron, stainless steel, etc.
（発明の効果）
以上説明したことから明らかなように本発明によれば、
中間層を基板と酸化物超伝導薄膜とのいずれに対しても
密着性に優れた酸化物で構成したから、基板材料として
は安価なガラス基板とかシリコン系基板を用いることが
可能となり、その結果、基板と中間層との密着性が良好
でかつ安定した超伝導特性が得られる酸化物超伝導薄膜
の積層構造を安価に提供することができる。(Effects of the Invention) As is clear from the above explanation, according to the present invention,
Since the intermediate layer is made of an oxide that has excellent adhesion to both the substrate and the oxide superconducting thin film, it is possible to use an inexpensive glass substrate or silicon-based substrate as the substrate material, and as a result, , a laminated structure of oxide superconducting thin films that has good adhesion between the substrate and the intermediate layer and provides stable superconducting properties can be provided at low cost.
第１図は本発明の実施例に係る酸化物超伝導薄膜の積層
構造の断面図、第２図は他の実施例に係る酸化物超伝導
薄膜の積層構造の断面図、第３図は実施例における電気
抵抗変化曲線である。
２・・・ガラス基板、４・・・中間層、６・・・酸化物
超伝導薄膜。FIG. 1 is a cross-sectional view of a laminated structure of an oxide superconducting thin film according to an embodiment of the present invention, FIG. 2 is a cross-sectional view of a laminated structure of an oxide superconducting thin film according to another embodiment, and FIG. 3 is a cross-sectional view of a laminated structure of an oxide superconducting thin film according to another embodiment. It is an electrical resistance change curve in an example. 2... Glass substrate, 4... Intermediate layer, 6... Oxide superconducting thin film.
Claims (4)
させてなるものであって、 その中間層として前記基板と酸化物超伝導薄膜とのいず
れに対しても密着性に優れた酸化物で構成したことを特
徴とする酸化物超伝導薄膜の積層構造。(1) An oxide superconducting thin film is formed on a substrate via an intermediate layer, and the intermediate layer has excellent adhesion to both the substrate and the oxide superconducting thin film. A laminated structure of oxide superconducting thin films characterized by being composed of oxides.
記載の酸化物超伝導薄膜の積層構造。(2) The laminated structure of the oxide superconducting thin film according to claim (1), wherein the substrate is a glass substrate.
）に記載の酸化物超伝導薄膜の積層構造。(3) Claim (1) wherein the substrate is made of a silicon-based substrate.
) Laminated structure of oxide superconducting thin films.
あるいは酸化亜鉛である請求項（１）、（２）または（
３）に記載の酸化物超伝導薄膜の積層構造。(4) The oxide is indium tin oxide, tin oxide,
or claim (1), (2) or (
3) Laminated structure of the oxide superconducting thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63177544A JPH0227614A (en) | 1988-07-15 | 1988-07-15 | Laminated structure of oxide superconductive thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63177544A JPH0227614A (en) | 1988-07-15 | 1988-07-15 | Laminated structure of oxide superconductive thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0227614A true JPH0227614A (en) | 1990-01-30 |
Family
ID=16032806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63177544A Pending JPH0227614A (en) | 1988-07-15 | 1988-07-15 | Laminated structure of oxide superconductive thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0227614A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6309767B1 (en) | 1997-10-29 | 2001-10-30 | Siemens Aktiengesellschaft | Superconductor structure with glass substrate and high-temperature superconductor deposited thereon, current limiter device having the superconductor structure and process for producing the structure |
| JP2008303082A (en) * | 2007-06-05 | 2008-12-18 | Kagoshima Univ | Interlayer of orientational substrate for forming epitaxial film and orientational substrate for forming epitaxial film |
| CN110291597A (en) * | 2017-02-14 | 2019-09-27 | 住友电气工业株式会社 | Superconducting wire and superconducting coil |
-
1988
- 1988-07-15 JP JP63177544A patent/JPH0227614A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6309767B1 (en) | 1997-10-29 | 2001-10-30 | Siemens Aktiengesellschaft | Superconductor structure with glass substrate and high-temperature superconductor deposited thereon, current limiter device having the superconductor structure and process for producing the structure |
| JP2008303082A (en) * | 2007-06-05 | 2008-12-18 | Kagoshima Univ | Interlayer of orientational substrate for forming epitaxial film and orientational substrate for forming epitaxial film |
| EP2000566A3 (en) * | 2007-06-05 | 2012-01-18 | Chubu Electric Power Co., Inc. | Interlayer of orientational substrate and orientational substrate for forming epitaxial film |
| CN110291597A (en) * | 2017-02-14 | 2019-09-27 | 住友电气工业株式会社 | Superconducting wire and superconducting coil |
| CN110291597B (en) * | 2017-02-14 | 2021-04-30 | 住友电气工业株式会社 | Superconducting wire and superconducting coil |
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