JPS6450575A - Substrate for electronic device - Google Patents
Substrate for electronic deviceInfo
- Publication number
- JPS6450575A JPS6450575A JP62208708A JP20870887A JPS6450575A JP S6450575 A JPS6450575 A JP S6450575A JP 62208708 A JP62208708 A JP 62208708A JP 20870887 A JP20870887 A JP 20870887A JP S6450575 A JPS6450575 A JP S6450575A
- Authority
- JP
- Japan
- Prior art keywords
- film
- contained
- crystalline structure
- perovskite type
- type crystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title abstract 5
- 239000013078 crystal Substances 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- 239000012212 insulator Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910052761 rare earth metal Inorganic materials 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 229910026161 MgAl2O4 Inorganic materials 0.000 abstract 1
- 229910002113 barium titanate Inorganic materials 0.000 abstract 1
- 229910052596 spinel Inorganic materials 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000002887 superconductor Substances 0.000 abstract 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Conductive Materials (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Containers, Films, And Cooling For Superconductive Devices (AREA)
Abstract
PURPOSE:To form a substrate for an electronic device comprising a superconductor film with a stratiform perovskite type crystalline structure by a method wherein an insulating film is formed on a silicon single crystal substrate and then a dielectric film with a specific perovskite type crystalline structure is formed on the insulating film and further a specific compound layer is formed on the dielectric film. CONSTITUTION:An insulator film 2 is formed on a silicon single crystal substrate 1 and then a dielectric film 3 with a perovskite type crystalline structure represented by a general formula of ABO3 wherein Pb, Ba, Sr and exceeding one kind of elements selected from a group of rare earth elements are contained as A while one or both of Ti, Zr are contained as B is formed on the insulator film 2. Furthermore, a compound layer 4 with stratiform perovskite type crystalline structure represented by the other general formula A2BO4-delta or A3B3O7-delta wherein exceeding one kind of elements selected from a group of Ba, Sr, T and rare earth elements are contained as A while Cu is contained as B is formed on the dielectric film 3. For example, a (La0.97Sr0.3)CuO4 layer 4 is formed by sputtering process on the 100 Si single crystal substrate 1 through the intermediary of the MgAl2O4 film 2 and the BaTiO3 film 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62208708A JPS6450575A (en) | 1987-08-21 | 1987-08-21 | Substrate for electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62208708A JPS6450575A (en) | 1987-08-21 | 1987-08-21 | Substrate for electronic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6450575A true JPS6450575A (en) | 1989-02-27 |
Family
ID=16560765
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62208708A Pending JPS6450575A (en) | 1987-08-21 | 1987-08-21 | Substrate for electronic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6450575A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01107419A (en) * | 1987-10-21 | 1989-04-25 | Hitachi Ltd | Superconductor |
| JPH02135618A (en) * | 1988-11-16 | 1990-05-24 | Nippon Telegr & Teleph Corp <Ntt> | Base for forming superconductor thin film |
| US6330135B1 (en) * | 1998-11-19 | 2001-12-11 | Nippon Electric Co | Magneto-resistance effect element based on a ferromagnetic oxide thin film on a stepped layer oxide |
| WO2002009159A3 (en) * | 2000-07-24 | 2002-04-25 | Motorola Inc | Thin-film metallic oxide structure and process for fabricating same |
| WO2002082551A1 (en) * | 2001-04-02 | 2002-10-17 | Motorola, Inc. | A semiconductor structure exhibiting reduced leakage current |
| US6498358B1 (en) | 2001-07-20 | 2002-12-24 | Motorola, Inc. | Structure and method for fabricating an electro-optic system having an electrochromic diffraction grating |
| US6750067B2 (en) * | 2000-07-24 | 2004-06-15 | Freescale Semiconductor, Inc. | Microelectronic piezoelectric structure and method of forming the same |
| JP2009152175A (en) * | 2007-11-29 | 2009-07-09 | Kyushu Institute Of Technology | Superconductor, noncontact measurement method for superconductor surface resistivity, and its measurement apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60161635A (en) * | 1984-02-02 | 1985-08-23 | Nec Corp | Substrate for electronic device |
-
1987
- 1987-08-21 JP JP62208708A patent/JPS6450575A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60161635A (en) * | 1984-02-02 | 1985-08-23 | Nec Corp | Substrate for electronic device |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01107419A (en) * | 1987-10-21 | 1989-04-25 | Hitachi Ltd | Superconductor |
| JPH02135618A (en) * | 1988-11-16 | 1990-05-24 | Nippon Telegr & Teleph Corp <Ntt> | Base for forming superconductor thin film |
| US6330135B1 (en) * | 1998-11-19 | 2001-12-11 | Nippon Electric Co | Magneto-resistance effect element based on a ferromagnetic oxide thin film on a stepped layer oxide |
| WO2002009159A3 (en) * | 2000-07-24 | 2002-04-25 | Motorola Inc | Thin-film metallic oxide structure and process for fabricating same |
| US6750067B2 (en) * | 2000-07-24 | 2004-06-15 | Freescale Semiconductor, Inc. | Microelectronic piezoelectric structure and method of forming the same |
| WO2002082551A1 (en) * | 2001-04-02 | 2002-10-17 | Motorola, Inc. | A semiconductor structure exhibiting reduced leakage current |
| US6498358B1 (en) | 2001-07-20 | 2002-12-24 | Motorola, Inc. | Structure and method for fabricating an electro-optic system having an electrochromic diffraction grating |
| JP2009152175A (en) * | 2007-11-29 | 2009-07-09 | Kyushu Institute Of Technology | Superconductor, noncontact measurement method for superconductor surface resistivity, and its measurement apparatus |
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