KR900007125A - Manufacturing Method of PbTiO₃ Thin Film by Chemical Vapor Deposition - Google Patents

Manufacturing Method of PbTiO₃ Thin Film by Chemical Vapor Deposition Download PDF

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Publication number
KR900007125A
KR900007125A KR1019880013032A KR880013032A KR900007125A KR 900007125 A KR900007125 A KR 900007125A KR 1019880013032 A KR1019880013032 A KR 1019880013032A KR 880013032 A KR880013032 A KR 880013032A KR 900007125 A KR900007125 A KR 900007125A
Authority
KR
South Korea
Prior art keywords
thin film
manufacturing
vapor deposition
chemical vapor
pbtio3
Prior art date
Application number
KR1019880013032A
Other languages
Korean (ko)
Other versions
KR910005405B1 (en
Inventor
김호기
윤순길
Original Assignee
전학제
한국과학기술원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 전학제, 한국과학기술원 filed Critical 전학제
Priority to KR1019880013032A priority Critical patent/KR910005405B1/en
Publication of KR900007125A publication Critical patent/KR900007125A/en
Application granted granted Critical
Publication of KR910005405B1 publication Critical patent/KR910005405B1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4414—Electrochemical vapour deposition [EVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Abstract

내용 없음.No content.

Description

화학 증착법에 의한 PbTiO3박막의 제조방법Manufacturing Method of PbTiO3 Thin Film by Chemical Vapor Deposition

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명을 수행하기 위한 증착장치의 개략도.1 is a schematic diagram of a deposition apparatus for carrying out the present invention.

제2도는 온도 함수로서의 직류 전도도의 변화도.2 is a change in direct current conductivity as a function of temperature.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 반응관 2 : 회전 기록계1: reaction tube 2: tachometer

3 : 모재 4 : 버블러3: base material 4: bubbler

5 : 수평 저항로 6 : 용기5: horizontal resistance furnace 6: container

7 : 트랩7: trap

Claims (2)

티탄 모재 위에 Pb, Ti(CnH2n + 10)4, O2의 혼합기체를 작용시키는 것이 특징인 PbTiO3박막의 제조방법.A method for producing a PbTiO 3 thin film, characterized in that a mixed gas of Pb, Ti (CnH 2 n + 10) 4 , O 2 is applied on a titanium base material. 제1항에 있어서, 증착 온도 600-750℃, Ti(CnH2n + 10)4분률 0.02-0.23, 그리고 O2분압 0.06-0.33atm의 증착 조건을 사용하는 것이 특징인 방법.The method of claim 1, wherein deposition conditions of 600-750 ° C., Ti (CnH 2 n + 10) 4 fraction 0.02-0.23, and O 2 partial pressure 0.06-0.33 atm are used. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019880013032A 1988-10-06 1988-10-06 Manufacturing method of pbtio3 thin film by chemical vapor deposition method KR910005405B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019880013032A KR910005405B1 (en) 1988-10-06 1988-10-06 Manufacturing method of pbtio3 thin film by chemical vapor deposition method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019880013032A KR910005405B1 (en) 1988-10-06 1988-10-06 Manufacturing method of pbtio3 thin film by chemical vapor deposition method

Publications (2)

Publication Number Publication Date
KR900007125A true KR900007125A (en) 1990-05-09
KR910005405B1 KR910005405B1 (en) 1991-07-29

Family

ID=19278288

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880013032A KR910005405B1 (en) 1988-10-06 1988-10-06 Manufacturing method of pbtio3 thin film by chemical vapor deposition method

Country Status (1)

Country Link
KR (1) KR910005405B1 (en)

Also Published As

Publication number Publication date
KR910005405B1 (en) 1991-07-29

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