KR930011161A - Method for manufacturing high dielectric constant capacitor insulating film - Google Patents

Method for manufacturing high dielectric constant capacitor insulating film Download PDF

Info

Publication number
KR930011161A
KR930011161A KR1019910020549A KR910020549A KR930011161A KR 930011161 A KR930011161 A KR 930011161A KR 1019910020549 A KR1019910020549 A KR 1019910020549A KR 910020549 A KR910020549 A KR 910020549A KR 930011161 A KR930011161 A KR 930011161A
Authority
KR
South Korea
Prior art keywords
thin film
capacitor insulating
insulating film
dielectric constant
high dielectric
Prior art date
Application number
KR1019910020549A
Other languages
Korean (ko)
Other versions
KR950000861B1 (en
Inventor
백용구
박성욱
김종철
박헌섭
Original Assignee
정몽헌
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 정몽헌, 현대전자산업 주식회사 filed Critical 정몽헌
Priority to KR1019910020549A priority Critical patent/KR950000861B1/en
Publication of KR930011161A publication Critical patent/KR930011161A/en
Application granted granted Critical
Publication of KR950000861B1 publication Critical patent/KR950000861B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Abstract

본 발명은 고집적 반도체 소자의 고유전율 캐패시터 절연막 제조방법에 관한 것으로, 고유전율과 누설전류 특성을 향상시키기 위하여, 캐패시터 절연막으로 Ta2O5박막을 증착한 다음, N2O를 챔버내에 주립하고 R. F발생기를 가동하여 발생된 N2O플라즈마에서 이온화된 산소기(O*)가 산소결핍결함을 갖는 Ta2O5박막내로 침투하여 산소기가 산소결핍결함을 갖는 Ta2O5박막내로 침투하여 산소기가 산소결핍결함을 갖는 Ta2O5박막과 반응하여 안정한 Ta2O5박막으로 형성하는 기술이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a high dielectric constant capacitor insulating film of a highly integrated semiconductor device. In order to improve the high dielectric constant and leakage current characteristics, a Ta 2 O 5 thin film is deposited using a capacitor insulating film, and then N 2 O is placed in a chamber and R . F generator operation to generate the N 2 O to penetrate into the Ta 2 O 5 thin film having an oxygen deficiency defects sansogi (O *) ionization in the plasma by sansogi penetration into Ta 2 O 5 thin film having an oxygen deficiency defects sansogi Is a technique of forming a stable Ta 2 O 5 thin film by reacting with Ta 2 O 5 thin film having an oxygen deficiency defect.

Description

고유전율 캐패시터 절연막 제조방법Method for manufacturing high dielectric constant capacitor insulating film

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명에 의해 산소기(O*)가 Ta2O5박막과 반응하여 안정한 Ta2O5박막을 형성한 것을 도시한 도면.First turn shows that the formation of the sansogi (O *) is Ta 2 O 5 thin film and a reaction to a stable Ta 2 O 5 thin films by the present invention.

제2도는 N2O 플라즈마 처리시간에 따라 유전상수의 변화를 도시한 그래프도.2 is a graph showing changes in dielectric constant with N 2 O plasma treatment time.

제3도는 N3O플라즈마 처리시간에 따라 누설전류 밀도의 변화를 도시한 그래프도.3 is a graph showing changes in leakage current density with N 3 O plasma treatment time.

Claims (4)

고유전율 캐패시터 절연막 제조방법에 있어서, 고유전율과 누설전류 특성을 향상시키기 위하여, 캐패시터절연막으로 Ta2O5박막을 증착한 다음, N2O를 챔버내에 주입하고 R. F 발생기를 가동하여 발생된 N2O플라즈마에서 이온화된 산소기(O*)가 산소결핍결합을 갖는 Ta2O5박막과 반응하여 안정안 Ta2O5박막으로 형성하는 것을 특징으로 하는 고유전율 캐패시터 절연막 제조방법.In the high dielectric constant capacitor insulating film manufacturing method, in order to improve the high dielectric constant and leakage current characteristics, a Ta 2 O 5 thin film is deposited with a capacitor insulating film, and then N 2 O is injected into the chamber and the R. F generator is operated. A method of manufacturing a high-k dielectric capacitor insulating film, wherein an oxygen group (O *) ionized in an N 2 O plasma reacts with a Ta 2 O 5 thin film having an oxygen deficient bond to form a stable Ta 2 O 5 thin film. 제1항에 있어서, 상기 N2O를 챔버내에 주입하는 대신에 O2를 챔버내에 주입하고 R. F 발생기를 가동하여 발생된 02플라즈마에서 이온화된 산소기(0*)가 생성되도록 하는 것을 포함하는 것을 특징으로 하는 고유전율캐패시터 절연막 제조방법.The method of claim 1, wherein instead of injecting the N 2 O into the chamber, O 2 is injected into the chamber and an R. F generator is activated to produce an ionized oxygen group (0 *) in the generated 0 2 plasma. A high dielectric constant capacitor insulating film manufacturing method characterized in that. 제1항에 있어서, 캐패시터 절연막으로 Ta2O5박막이 포함된 복합구조를 형성하는 것을 포함하는 것을 특징으로 하는 고유전율 캐패시터 절연막 제조방법.The method of manufacturing a high dielectric constant capacitor insulating film according to claim 1, comprising forming a composite structure including a Ta 2 O 5 thin film as the capacitor insulating film. 제1항에 있어서, 산소기(O*)가 산소결핍결합을 갖는 Ta2O박막과 반응하여 안정한 Ta2O5박막을 형성한다음, N2O 또는 O2플라즈마로 예정된 온도에서 Ta2O5박막을 열처리하는 것을 포함하는 것을 특징으르 하는 고유전율 캐패시터 절연막 제조방법.The method of claim 1, wherein the oxygen group (O *) reacts with a Ta 2 O thin film having an oxygen deficient bond to form a stable Ta 2 O 5 thin film, followed by Ta 2 O 5 at a predetermined temperature with N 2 O or O 2 plasma. A method of manufacturing a high dielectric constant capacitor insulating film, comprising heat treating a thin film. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910020549A 1991-11-19 1991-11-19 Manufacturing method of capacitor insulating film KR950000861B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910020549A KR950000861B1 (en) 1991-11-19 1991-11-19 Manufacturing method of capacitor insulating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910020549A KR950000861B1 (en) 1991-11-19 1991-11-19 Manufacturing method of capacitor insulating film

Publications (2)

Publication Number Publication Date
KR930011161A true KR930011161A (en) 1993-06-23
KR950000861B1 KR950000861B1 (en) 1995-02-02

Family

ID=19323041

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910020549A KR950000861B1 (en) 1991-11-19 1991-11-19 Manufacturing method of capacitor insulating film

Country Status (1)

Country Link
KR (1) KR950000861B1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100384850B1 (en) * 2000-12-14 2003-05-22 주식회사 하이닉스반도체 Method for forming Ta2O5 dielectric layer
KR100392504B1 (en) * 2001-05-03 2003-07-23 금호산업주식회사 Tire cement composition

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10247723A (en) * 1997-03-04 1998-09-14 Oki Electric Ind Co Ltd Manufacture of semiconductor device capacitor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100384850B1 (en) * 2000-12-14 2003-05-22 주식회사 하이닉스반도체 Method for forming Ta2O5 dielectric layer
KR100392504B1 (en) * 2001-05-03 2003-07-23 금호산업주식회사 Tire cement composition

Also Published As

Publication number Publication date
KR950000861B1 (en) 1995-02-02

Similar Documents

Publication Publication Date Title
KR960026878A (en) Capacitive element for integrated circuit and its manufacturing method
WO2003041124A3 (en) Method of fabricating a gate stack at low temperature
KR940010185A (en) Semiconductor device manufacturing apparatus and load lock chamber, and semiconductor device manufacturing method using the semiconductor device manufacturing apparatus
KR960002883A (en) Semiconductor device and manufacturing method
KR930011161A (en) Method for manufacturing high dielectric constant capacitor insulating film
KR20050058260A (en) Methods of forming capacitors and methods of forming capacitor dielectric layers
KR950001924A (en) How to Form a Fine Copper Conductor Pattern
KR860007722A (en) Improved insulating film processing method and wafer and integrated circuit manufactured according to the processing method
KR960026662A (en) Insulation method
KR940027062A (en) Method for forming tantalum oxide insulating film for semiconductor device
JPS5730358A (en) Manufacture of semiconductor device
KR970030863A (en) Method for manufacturing gate insulating film of thin film transistor
KR970003985A (en) Tantalum oxide (Ta_2 O_5) formation method of semiconductor device
KR100198602B1 (en) Method of forming poly electrode in mos
KR930011028A (en) Method for manufacturing high dielectric constant capacitor insulating film
Boyd et al. Low temperature Si oxidation with excimer lamp sources
KR950027999A (en) Oxide film formation method of semiconductor device
JPS6476606A (en) Dielectric material
KR960019572A (en) Semiconductor Integrated Circuit Dielectric Film Formation Method
JPS5690528A (en) Surface treatment of semiconductor device
JPS577121A (en) Manufacture of semiconductor device
KR950027911A (en) Gate oxide film formation method of a semiconductor device
JPS5694759A (en) Wiring forming method
KR940016588A (en) Gate oxide film formation method of a semiconductor device
KR960005821A (en) Surface treatment method of GaAs substrate

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20100126

Year of fee payment: 16

LAPS Lapse due to unpaid annual fee