KR100198602B1 - Method of forming poly electrode in mos - Google Patents
Method of forming poly electrode in mos Download PDFInfo
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- KR100198602B1 KR100198602B1 KR1019910015677A KR910015677A KR100198602B1 KR 100198602 B1 KR100198602 B1 KR 100198602B1 KR 1019910015677 A KR1019910015677 A KR 1019910015677A KR 910015677 A KR910015677 A KR 910015677A KR 100198602 B1 KR100198602 B1 KR 100198602B1
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- poly
- electrode
- film
- plasma
- substrate
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 9
- 239000011574 phosphorus Substances 0.000 claims abstract description 9
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 4
- 150000002367 halogens Chemical class 0.000 claims abstract description 4
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000012535 impurity Substances 0.000 abstract description 3
- 238000002513 implantation Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 2
- 229920000831 ionic polymer Polymers 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Electrodes For Compound Or Non-Metal Manufacture (AREA)
Abstract
본 발명은 모스의 폴리 전극 형성 방법에 관한 것으로, 기판(1)상에 산화막(2) 및 폴리 필름(3)을 차례로 적층 형성하고, 인 플라즈마를 발생시켜 상기의 인(P+)플라즈마가 기판(1)쪽으로 유도되도록 기판(1)에 전압을 인가하고 기판(1)의 상부에서 할로겐 램프로 열을 가하여 P+플라즈마가 상기의 폴리 필름(3)에 도우핑되도록 하는 공정을 포함하여 이루어져 폴리 전극을 형성하기 위한 불순물 주입 공정을 단순화한 모스의 폴리 전극 제조 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a poly-electrode of MOS, wherein an oxide film (2) and a poly film (3) are sequentially stacked on a substrate (1), and phosphorus plasma is generated to generate the phosphorus (P + ) plasma substrate. Applying a voltage to the substrate 1 so as to be directed toward (1) and applying heat to a halogen lamp at the top of the substrate 1 so that the P + plasma is doped into the poly film 3. The present invention relates to a method for producing a poly-electrode of MOS which simplifies an impurity implantation process for forming an electrode.
Description
제1도는 종래 기술의 모스의 폴리 전극을 나타낸 단면도.1 is a cross-sectional view showing a poly electrode of a Morse of the prior art.
제2도는 본 발명에 따른 모스의 폴리 전극을 나타낸 단면도.2 is a cross-sectional view showing a poly electrode of MOS according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 반도체 기판 2 : 산화막1 semiconductor substrate 2 oxide film
3 : 폴리필름3: polyfilm
본 발명은 모스(MOS)의 폴리 전극 형성에 관한 것으로, 특히 폴리 전극의 저항을 감소시키기 위한 불순물 주입 공정을 플라즈마를 이용하여 실시하여 공정을 단순화한 모스의 폴리 전극 제조 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to poly-electrode formation of MOS, and more particularly, to a method of manufacturing poly-electrode of MOS, in which an impurity implantation process for reducing resistance of a poly-electrode is carried out using plasma.
일반적으로 폴리 실리콘을 사용한 전극의 형성시에는 증착된 폴리 실리콘의 저항이 크므로 이 폴리 실리콘의 저항을 떨어뜨리기 위하여 기판과 반대 도전형의 불순물을 증착된 폴리 실리콘층에 주입하는 공정을 실시한다.In general, when forming an electrode using polysilicon, since the resistance of the deposited polysilicon is large, a process of injecting impurities of opposite conductivity type into the deposited polysilicon layer to reduce the resistance of the polysilicon is performed.
이하, 첨부된 도면을 참고하여 종래 기술의 모스의 폴리 전극 형성에 관하여 상세히 설명하면 다음과 같다.Hereinafter, with reference to the accompanying drawings will be described in detail with respect to the poly-electrode formation of the prior art Morse as follows.
제1도는 종래 기술의 모스의 폴리 전극을 나타낸 단면도이다.1 is a cross-sectional view showing a poly electrode of a morse of the prior art.
종래 기술에 있어서 폴리 이온 주입 공정은 다음과 같은 공정에 의해 이루어진다.In the prior art, the poly ion implantation process is performed by the following process.
반도체 기판(1)상에 게이트 절연을 위한 산화막(2)을 형성한 후, 상기 산화막(2)상에 게이트 전극을 형성하기 위한 폴리 필름(3)을 증착한다.After forming an oxide film 2 for gate insulation on the semiconductor substrate 1, a poly film 3 for forming a gate electrode is deposited on the oxide film 2.
이어, 상기 폴리 필름(3)에 인(P)을 주입하기 위하여 POCl3, O2가스를 소오스 가스로하고 N2가스를 캐리어 가스로 하여 상기 폴리 필름(3)상에 인산화막(P2O5)(4)을 형성한다.Subsequently, in order to inject phosphorus (P) into the poly film 3, a phosphorylated film (P 2 O 5 ) is formed on the poly film 3 using POCl 3 and O 2 gas as a source gas and N 2 gas as a carrier gas. (4).
이 때, 상기의 인산화막(4)의 P이온이 폴리 필름(3)으로 확산되어 폴리 필름(3)에는 인(Phosphorus)이 도핑된다.At this time, P ions of the phosphorylated film 4 are diffused into the poly film 3 so that the poly film 3 is doped with phosphorus.
상기와 같이 인을 함유한 산화막을 이용한 확산 공정으로 폴리 필름(3)에 저항을 감소시키기 위한 이온 주입 공정이 끝나면 상기의 폴리 필름(3), 산화막(3)을 패터닝하여 게이트 전극을 형성하게 된다.After the ion implantation process to reduce the resistance to the poly film 3 by the diffusion process using an oxide film containing phosphorus as described above, the poly film 3 and the oxide film 3 are patterned to form a gate electrode. .
이 때, 상기의 인산화막(4)은 공정상의 필요에 의해 제거된다.At this time, the phosphorylated film 4 is removed as a process necessity.
상기와 같은 종래 기술의 MOS의 폴리 전극 형성에 있어서는 폴리 필름에 P이온을 주입하기 위하여 POCl3가스를 사용하므로 다음과 같은 문제점이 있다.In forming the polyelectrode of the prior art MOS as described above, since POCl 3 gas is used to inject P ions into the poly film, there are the following problems.
즉, 인산화막을 형성하기 위한 공정에서 발생하는 Cl가스에 의해 상기의 공정에 사용되는 장비가 부식되어 장비의 노후화가 빨리 되는 문제점이 있다.That is, there is a problem in that the equipment used in the above-mentioned process is corroded by Cl gas generated in the process for forming the phosphorylated film, thereby aging the equipment quickly.
그리고 공정중에 발생하는 Cl가스의 취급 및 처리에 어려움이 있어 공정이 복잡해진다.In addition, there is a difficulty in handling and treating Cl gas generated during the process, which complicates the process.
본 발명은 상기와 같은 종래 기술의 폴리 전극 형성의 문제점을 해결하기 위하여 안출한 것으로, P플라즈마를 이용하여 폴리 필름에 이온 주입 공정을 하는 방법으로 공정을 단순화한 모스의 폴리 전극 제조 방법을 제공하는데 그 목적이 있다.The present invention has been made to solve the problems of the prior art poly-electrode formation, to provide a method for producing a poly-electrode of Moss simplifies the process by the ion implantation process to the poly film using P plasma. The purpose is.
이하, 첨부된 도면을 참고하여 본 발명의 모스의 폴리 전극 형성 방법에 관하여 상세히 설명하면 다음과 같다.Hereinafter, with reference to the accompanying drawings will be described in detail with respect to the poly-electrode forming method of Morse of the present invention.
제2도는 본 발명에 따른 모스의 폴리 전극을 나타낸 단면도이다.2 is a cross-sectional view showing a poly electrode of MOS according to the present invention.
본 발명의 폴리 전극 형성은 먼저, 반도체 기판(1)상에 게이트 절연을 위한 산화막(2)을 형성하고 상기 산화막(2)상에 게이트 전극을 형성하기 위한 폴리 필름(3)을 증착한다.In forming the polyelectrode of the present invention, first, an oxide film 2 for gate insulation is formed on a semiconductor substrate 1 and a poly film 3 for forming a gate electrode is deposited on the oxide film 2.
그리고 상기 폴리 필름(3)에 P이온을 주입하기 위한 공정으로 인(P)분위기에서 할로겐 램프를 사용하여 열을 가하고 P+플라즈마가 반도체 기판(1)으로 유도되도록 상기의 반도체 기판(1)에 전압을 걸어준다.In the process of injecting P ions into the poly film 3, heat is applied using a halogen lamp in a phosphorus (P) atmosphere, and P + plasma is applied to the semiconductor substrate 1 so that the P + plasma is guided to the semiconductor substrate 1. Apply voltage.
상기의 P+플라즈마를 발생시키기 위한 반응 가스로는 PH3를 사용한다.PH 3 is used as a reaction gas for generating the P + plasma.
플라즈마의 발생은 높은 에너지의 RF장을 이용하는 것이 보통이다.The generation of plasma usually uses a high energy RF field.
상기와 같이 반도체 기판(1)쪽으로 유도된 P+플라즈마는 할로겐 램프의 열에 의해 산화막(2)상의 폴리 필름(3)으로 도우핑된다.As described above, the P + plasma induced toward the semiconductor substrate 1 is doped into the poly film 3 on the oxide film 2 by the heat of the halogen lamp.
상기와 같이 플라즈마를 이용하여 폴리 필름(3)에 이온 주입 공정을 한 후에 상기의 이온이 주입되어 저항이 감소된 폴리 필름(3)과 산화막(2)을 패터닝하여 폴리 전극을 형성한다.After the ion implantation process is performed on the poly film 3 using the plasma as described above, the poly ion 3 is formed by patterning the poly film 3 and the oxide film 2 having reduced resistance to form the poly electrode.
상기와 같은 본 발명의 모스의 폴리 전극 제조 공정은 인 플라즈마를 이용하여 폴리 필름에 이온을 도우핑하므로 이온 주입 공정에서 발생하는 잔류 가스(예를들어 Cl가스 등의)가 없어 장비의 부식 가능성을 없에고 공정을 단순화하는 효과가 있다.As described above, the poly-electrode manufacturing process of Morse of the present invention uses a phosphorus plasma to dope ions into the poly film, thereby eliminating the possibility of corrosion of equipment because there is no residual gas (for example, Cl gas) generated in the ion implantation process. And it has the effect of simplifying the process.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910015677A KR100198602B1 (en) | 1991-09-09 | 1991-09-09 | Method of forming poly electrode in mos |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910015677A KR100198602B1 (en) | 1991-09-09 | 1991-09-09 | Method of forming poly electrode in mos |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR930006834A KR930006834A (en) | 1993-04-22 |
| KR100198602B1 true KR100198602B1 (en) | 1999-06-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019910015677A KR100198602B1 (en) | 1991-09-09 | 1991-09-09 | Method of forming poly electrode in mos |
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| Country | Link |
|---|---|
| KR (1) | KR100198602B1 (en) |
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1991
- 1991-09-09 KR KR1019910015677A patent/KR100198602B1/en not_active IP Right Cessation
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| Publication number | Publication date |
|---|---|
| KR930006834A (en) | 1993-04-22 |
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