KR890016693A - Manufacturing Method of InSb Thin Film for Hall Device - Google Patents

Manufacturing Method of InSb Thin Film for Hall Device Download PDF

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Publication number
KR890016693A
KR890016693A KR1019880004665A KR880004665A KR890016693A KR 890016693 A KR890016693 A KR 890016693A KR 1019880004665 A KR1019880004665 A KR 1019880004665A KR 880004665 A KR880004665 A KR 880004665A KR 890016693 A KR890016693 A KR 890016693A
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KR
South Korea
Prior art keywords
thin film
insb thin
manufacturing
hall device
hal1
Prior art date
Application number
KR1019880004665A
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Korean (ko)
Other versions
KR950014291B1 (en
Inventor
추대호
송이헌
오윤경
Original Assignee
서주인
삼성전기 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 서주인, 삼성전기 주식회사 filed Critical 서주인
Priority to KR1019880004665A priority Critical patent/KR950014291B1/en
Publication of KR890016693A publication Critical patent/KR890016693A/en
Application granted granted Critical
Publication of KR950014291B1 publication Critical patent/KR950014291B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor

Abstract

내용 없음No content

Description

Hall 소자용 InSb 박막의 제조방법Manufacturing Method of InSb Thin Film for Hall Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 1 도는 본 발명에 따른 열처리시간 및 온도그래프.1 is a heat treatment time and a temperature graph according to the present invention.

Claims (1)

Hal1 소자용 InSb 박막의 열처리방법에 있어서 기판위에 InSb 박막을 증착하고 그위에 In2O3나 SiOx 계열의 보호막을 씌운후 진공 또는 Ar 분위기에서 540-560℃의 온도범위에서 30분간 유지후 냉각시킴을 특징으로 하는 Hal1 소자용 InSb 박막의 제조방법.In the heat treatment method of the InSb thin film for the InSb thin film deposition Hal1 element on the substrate and over the Sikkim cooling after holding for 30 minutes at a temperature range of 540-560 ℃ in vacuum or in an Ar atmosphere and then covered with a protective film of In 2 O 3 series or SiOx Method for producing an InSb thin film for Hal1 device, characterized in that. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019880004665A 1988-04-23 1988-04-23 Insb thin film manufacturing method for hall device KR950014291B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019880004665A KR950014291B1 (en) 1988-04-23 1988-04-23 Insb thin film manufacturing method for hall device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019880004665A KR950014291B1 (en) 1988-04-23 1988-04-23 Insb thin film manufacturing method for hall device

Publications (2)

Publication Number Publication Date
KR890016693A true KR890016693A (en) 1989-11-29
KR950014291B1 KR950014291B1 (en) 1995-11-24

Family

ID=19273824

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880004665A KR950014291B1 (en) 1988-04-23 1988-04-23 Insb thin film manufacturing method for hall device

Country Status (1)

Country Link
KR (1) KR950014291B1 (en)

Also Published As

Publication number Publication date
KR950014291B1 (en) 1995-11-24

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