KR920015440A - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device Download PDF

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Publication number
KR920015440A
KR920015440A KR1019910000645A KR910000645A KR920015440A KR 920015440 A KR920015440 A KR 920015440A KR 1019910000645 A KR1019910000645 A KR 1019910000645A KR 910000645 A KR910000645 A KR 910000645A KR 920015440 A KR920015440 A KR 920015440A
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KR
South Korea
Prior art keywords
manufacturing
semiconductor device
single crystal
crystal silicon
ions
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Application number
KR1019910000645A
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Korean (ko)
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KR100268862B1 (en
Inventor
조복룡
Original Assignee
문정환
금성일렉트론 주식회사
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Priority to KR1019910000645A priority Critical patent/KR100268862B1/en
Publication of KR920015440A publication Critical patent/KR920015440A/en
Application granted granted Critical
Publication of KR100268862B1 publication Critical patent/KR100268862B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

내용 없음No content

Description

반도체 소자의 제조방법Manufacturing method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 공정 단면도.2 is a cross-sectional view of the process of the present invention.

Claims (2)

단결정 실리콘 기판위에 게이트를 형성하고 보론을 이온 주입하는 공정과, 상기 실리콘 기판위에 단결정 실리콘과 같은 원소의 이온을 주입하고 어닐링하는 공정과, CVD산화막과 메탈을 형성하여 패터닝하는 공정을 차례로 실시함을 특징으로 하는 반도체 소자의 제조방법.Forming a gate on the single crystal silicon substrate and ion implanting boron, implanting and annealing ions of an element such as single crystal silicon on the silicon substrate, and forming and patterning a CVD oxide film and a metal. A method for manufacturing a semiconductor device. 제1항에 있어서, 단결정 실리콘과 같은 원소로는 Si+이온을 포함함을 특징으로 하는 반도체 소자의 제조방법.The method of manufacturing a semiconductor device according to claim 1, wherein the element such as single crystal silicon contains Si + ions. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910000645A 1991-01-16 1991-01-16 Fabricating method for semiconductor device KR100268862B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910000645A KR100268862B1 (en) 1991-01-16 1991-01-16 Fabricating method for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910000645A KR100268862B1 (en) 1991-01-16 1991-01-16 Fabricating method for semiconductor device

Publications (2)

Publication Number Publication Date
KR920015440A true KR920015440A (en) 1992-08-26
KR100268862B1 KR100268862B1 (en) 2000-10-16

Family

ID=19309902

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910000645A KR100268862B1 (en) 1991-01-16 1991-01-16 Fabricating method for semiconductor device

Country Status (1)

Country Link
KR (1) KR100268862B1 (en)

Also Published As

Publication number Publication date
KR100268862B1 (en) 2000-10-16

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