KR920015455A - Epitaxial Growth Process of Semiconductor Devices - Google Patents

Epitaxial Growth Process of Semiconductor Devices Download PDF

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Publication number
KR920015455A
KR920015455A KR1019910000892A KR910000892A KR920015455A KR 920015455 A KR920015455 A KR 920015455A KR 1019910000892 A KR1019910000892 A KR 1019910000892A KR 910000892 A KR910000892 A KR 910000892A KR 920015455 A KR920015455 A KR 920015455A
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KR
South Korea
Prior art keywords
epitaxial growth
semiconductor devices
growth process
semiconductor device
predetermined thickness
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KR1019910000892A
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Korean (ko)
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KR100232170B1 (en
Inventor
전표만
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문정환
금성일렉트론 주식회사
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Priority to KR1019910000892A priority Critical patent/KR100232170B1/en
Publication of KR920015455A publication Critical patent/KR920015455A/en
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Publication of KR100232170B1 publication Critical patent/KR100232170B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)

Abstract

내용 없음No content

Description

반도체 소자의 에피택셜 성장공정Epitaxial Growth Process of Semiconductor Devices

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (2)

반도체장치의 제조공정에 있어서, 실리콘을 소정의 두께로 성장시키는 제1단계와, 소정의 불순물을 첨가하면서 에피택셜 성장시키는 제2단계로 이루어진 반도체 소자의 에피택셜 성장공정.A process for manufacturing a semiconductor device, comprising: a first step of growing silicon to a predetermined thickness, and an epitaxial growth step of a semiconductor device comprising a second step of epitaxial growth while adding a predetermined impurity. 제1항에 있어서, 상기 소정의 두께는 0.3㎛인 것을 특징으로 하는 반도체소자의 에피택셜 성장공정.The epitaxial growth process of a semiconductor device according to claim 1, wherein said predetermined thickness is 0.3 mu m. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910000892A 1991-01-19 1991-01-19 Epitaxial growth process of semiconductor device KR100232170B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910000892A KR100232170B1 (en) 1991-01-19 1991-01-19 Epitaxial growth process of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910000892A KR100232170B1 (en) 1991-01-19 1991-01-19 Epitaxial growth process of semiconductor device

Publications (2)

Publication Number Publication Date
KR920015455A true KR920015455A (en) 1992-08-26
KR100232170B1 KR100232170B1 (en) 1999-12-01

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ID=19310064

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910000892A KR100232170B1 (en) 1991-01-19 1991-01-19 Epitaxial growth process of semiconductor device

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KR (1) KR100232170B1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100246086B1 (en) * 1995-10-26 2000-03-15 나시모토 류조 Liquid crystal display device
KR101308328B1 (en) * 2006-10-19 2013-09-17 스미토모덴키고교가부시키가이샤 Group iii element nitride substrate, substrate with epitaxial layer, processes for producing these, and process for producing semiconductor element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100246086B1 (en) * 1995-10-26 2000-03-15 나시모토 류조 Liquid crystal display device
KR101308328B1 (en) * 2006-10-19 2013-09-17 스미토모덴키고교가부시키가이샤 Group iii element nitride substrate, substrate with epitaxial layer, processes for producing these, and process for producing semiconductor element

Also Published As

Publication number Publication date
KR100232170B1 (en) 1999-12-01

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