KR910013519A - Rf 트랜지스터 패키지 - Google Patents

Rf 트랜지스터 패키지 Download PDF

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Publication number
KR910013519A
KR910013519A KR1019900019158A KR900019158A KR910013519A KR 910013519 A KR910013519 A KR 910013519A KR 1019900019158 A KR1019900019158 A KR 1019900019158A KR 900019158 A KR900019158 A KR 900019158A KR 910013519 A KR910013519 A KR 910013519A
Authority
KR
South Korea
Prior art keywords
package
pad
plasma deposited
mils
thickness
Prior art date
Application number
KR1019900019158A
Other languages
English (en)
Inventor
에이.부테라 가스퍼
Original Assignee
원본미기재
에스지에스-톰슨 마이크로일렉트로닉스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 원본미기재, 에스지에스-톰슨 마이크로일렉트로닉스, 인코포레이티드 filed Critical 원본미기재
Publication of KR910013519A publication Critical patent/KR910013519A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3731—Ceramic materials or glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3732—Diamonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/642—Capacitive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

내용 없음.

Description

RF 트랜지스터 패키지
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
첨부도면은 본 발명에 따른 패키지의 3차원 확대도이다.

Claims (9)

  1. 입력측(input), 출력측(output), 그리고 반도체의 각 단자들을 그와 함께 접속시키기 위한 공통 단자를 갖는 반도체 패키지에 있어서, 지지체 부재; 상기 지지체 부재위에 장착되어 있고 상기 반도체를 수용하기 위한 열전도성, 전기 절연성의 패드; 상기 패드위에 장착된 반도체; 보호용 뚜껑을 포함하고, 상기 패드는 플라즈마 증착된 질화알루미늄, 진공 증착된 다이아몬드, 플라즈마 증착된 알루이나 및 플라즈마 증착된 질화붕소로 구성된 군으로 부터 선택되는 재료를 포함하는 패키지.
  2. 제1항에 있어서, 상기 재료가 플라즈마 증착된 질화붕소인 패키지.
  3. 제2항에 있어서, 상기 패드가 7내지 8밀의 두께를 갖는 패키지.
  4. 제1항에 있어서, 상기 재료가 플라즈마 증착된 질화알루미늄인 패키지.
  5. 제4항에 있어서, 상기 패드가 7내지 8밀의 두께를 갖는 패키지.
  6. 제1항에 있어서, 상기 재료가 진공 증착된 다이아몬드인 패키지.
  7. 제6항에 있어서, 상기 패드가 0.3내지 0.5밀의 두께를 갖는 패키지.
  8. 제1항에 있어서, 상기 재료가 플라즈마 증착된 알루미나인 패키지.
  9. 제8항에 있어서, 상기 패드가 7내지 8밀의 두께를 갖는 패키지.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900019158A 1989-12-29 1990-11-23 Rf 트랜지스터 패키지 KR910013519A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/458,585 US5109268A (en) 1989-12-29 1989-12-29 Rf transistor package and mounting pad
US458585 1999-12-09

Publications (1)

Publication Number Publication Date
KR910013519A true KR910013519A (ko) 1991-08-08

Family

ID=23821354

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900019158A KR910013519A (ko) 1989-12-29 1990-11-23 Rf 트랜지스터 패키지

Country Status (5)

Country Link
US (2) US5109268A (ko)
EP (1) EP0435603B1 (ko)
JP (1) JPH03211860A (ko)
KR (1) KR910013519A (ko)
DE (1) DE69031680T2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100320130B1 (ko) * 1999-03-05 2002-01-10 김덕중 알루미늄제 부품의 질화알루미늄층 형성방법

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US5388027A (en) * 1993-07-29 1995-02-07 Motorola, Inc. Electronic circuit assembly with improved heatsinking
US5792984A (en) * 1996-07-01 1998-08-11 Cts Corporation Molded aluminum nitride packages
US5770890A (en) * 1997-02-25 1998-06-23 Raytheon Company Using a thermal barrier to provide a hermetic seal surface on aluminum nitride substrate electronic packages
US6335863B1 (en) * 1998-01-16 2002-01-01 Sumitomo Electric Industries, Ltd. Package for semiconductors, and semiconductor module that employs the package
JP2000174166A (ja) * 1998-10-02 2000-06-23 Sumitomo Electric Ind Ltd 半導体搭載パッケ―ジ
JP2001244357A (ja) * 2000-03-02 2001-09-07 Sumitomo Electric Ind Ltd パッケージ及びその製造方法
GB2371922B (en) * 2000-09-21 2004-12-15 Cambridge Semiconductor Ltd Semiconductor device and method of forming a semiconductor device
WO2002058143A2 (en) 2001-01-22 2002-07-25 Morgan Chemical Products, Inc. Cvd diamond enhanced microprocessor cooling system
US6818477B2 (en) * 2001-11-26 2004-11-16 Powerwave Technologies, Inc. Method of mounting a component in an edge-plated hole formed in a printed circuit board
JP2004146413A (ja) * 2002-10-22 2004-05-20 Sumitomo Electric Ind Ltd 半導体素子収納用パッケージおよび半導体装置
US20080128895A1 (en) * 2006-12-05 2008-06-05 Oman Todd P Wafer applied thermal-mechanical interface
JP6781021B2 (ja) * 2016-11-29 2020-11-04 モレックス エルエルシー 電子部品

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US3364400A (en) * 1964-10-22 1968-01-16 Texas Instruments Inc Microwave transistor package
GB1130666A (en) * 1966-09-30 1968-10-16 Nippon Electric Co A semiconductor device
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100320130B1 (ko) * 1999-03-05 2002-01-10 김덕중 알루미늄제 부품의 질화알루미늄층 형성방법

Also Published As

Publication number Publication date
EP0435603A3 (en) 1993-01-20
EP0435603A2 (en) 1991-07-03
DE69031680T2 (de) 1998-03-26
DE69031680D1 (de) 1997-12-11
EP0435603B1 (en) 1997-11-05
JPH03211860A (ja) 1991-09-17
USRE35845E (en) 1998-07-14
US5109268A (en) 1992-04-28

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